ON Semiconductor N-channel MOSFET is produced using ON Semiconductor's advanced Power Trench process that has been especially tailored to minimize on-state resistance, yet maintain superior switching performance.

Features

• Max R_DS(ON) = 2.4 mΩ at V_GS = 10 V, I_D = 25 A
• Max R_DS(ON) = 3.2 mΩ at V_GS = 8 V, I_D = 22 A
• Advanced package and silicon combination for low R_DS(ON) and high-efficiency