Power-supply designers can satisfy system demands for higher power and greater efficiency using the latest 900 V MDmesh™ K5 super-junction MOSFETs from STMicroelectronics, which deliver best-in-class on-resistance (R_DS(ON)) and dynamic characteristics.

A 900 V breakdown voltage assures extra safety margin in systems with high bus voltages. The series contains the first 900 V MOSFETs with R_DS(ON) below 100 mΩ, and gives the industry’s best R_DS(ON) among DPAK devices. Also, with the industry’s lowest gate charge (Q_G), they ensure faster switching for greater flexibility where a wide input-voltage range is required. These characteristics ensure high efficiency and reliability in all types of flyback converters, including standard, quasi-resonant, and active-clamp designs, covering power ratings as low as 35 W up to 230 W or higher. In addition, low input and output capacitances (C_ISS, C_OSS) enable zero-voltage switching with minimal energy loss in half-bridge LLC resonant converters.

The increased safety margin and superior static and dynamic behavior of the new devices enable designers to improve the performance of a wide variety of products such as server power supplies, 3-phase switched-mode power supplies (SMPS), LED lighting supplies, electric-vehicle (EV) chargers, solar generators, welders, industrial drives, and factory automation.

ST’s family of MDmesh K5 super-junction transistors offers numerous choices at voltage ratings of 800 V, 850 V, 900 V, 950 V, 1050 V, 1200 V, and 1500 V. Together with versatile package options including TO-220AB, TO-220FP, TO-247, TO-247 long lead, IPAK and I²PAK, as well as D²PAK and DPAK surface-mount power packages, ST’s super-junction devices present designers with a comprehensive portfolio of very high voltage (VHV) MOSFETs.