IS43LR16160H-6BLI

Mfr. #:: IS43LR16160H-6BLI
제조사:: ISSI
설명:: DRAM 256M, 1.8V, Mobile DDR, 16Mx16, 166Mhz, 90 ball BGA (8mmx10mm) RoHS, IT
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IS43LR16160H-6BLI 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IS43LR16160H-6BLI 추가 정보

제품 속성
속성 값

제조사:: ISSI

제품 카테고리:: 적은 양

RoHS:: Y

유형:: SDRAM 모바일 - DDR

데이터 버스 폭:: 16 bit

조직:: 16 M x 16

패키지/케이스:: BGA-60

메모리 크기:: 256 Mbit

최대 클록 주파수:: 166 MHz

액세스 시간:: 6 ns

공급 전압 - 최대:: 1.95 V

공급 전압 - 최소:: 1.7 V

공급 전류 - 최대:: 55 mA

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

시리즈:: IS43LR16160H

상표:: ISSI

장착 스타일:: SMD/SMT

습기에 민감한:: 네

상품 유형:: 적은 양

공장 팩 수량:: 300

하위 카테고리:: 메모리 및 데이터 저장

Tags: IS43LR16160H, IS43LR161, IS43LR1, IS43LR, IS43L, IS43, IS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS43LR16160H-6BLI 평가 및 리뷰

W***g

Looks ok , not tested yet

2019-09-18

V***v

Alas so the goods and did not see the description to give.

2019-05-18

M***v

thank you very much

2019-05-20

IS43LR16160H-6BLI 추가 정보

Mobile DDR SDRAM: ISSI Mobile DDR SDRAM is organized as 4 banks of 16,777,216 words x 16 bits and uses a double-data-rate architecture to achieve high-speed operation. The Data Input/Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. ISSI Mobile DDR SDRAM offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.

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