SBC807-4

SBC807-40LT1G vs SBC807-40LT3G vs SBC807-40LT3

 
PartNumberSBC807-40LT1GSBC807-40LT3GSBC807-40LT3
DescriptionBipolar Transistors - BJT SS GP XSTR SPCL TRBipolar Transistors - BJT SS GP XSTR SPCL TRSmall Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 45 V- 45 V-
Collector Base Voltage VCBO- 50 V- 50 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 0.7 V- 0.7 V-
Maximum DC Collector Current0.5 A--
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBC807-40LBC807-40L-
DC Current Gain hFE Max600600-
PackagingReelReel-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current- 0.5 A- 500 mA-
DC Collector/Base Gain hfe Min250250-
Pd Power Dissipation300 mW225 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
QualificationAEC-Q101AEC-Q101-
Factory Pack Quantity300010000-
SubcategoryTransistorsTransistors-
Unit Weight0.000282 oz0.000282 oz-
제조사 부분 # 설명 RFQ
SBC807-40LT1G Bipolar Transistors - BJT SS GP XSTR SPCL TR
SBC807-40LT3G Bipolar Transistors - BJT SS GP XSTR SPCL TR
SBC807-40LT3 Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
ON Semiconductor
ON Semiconductor
SBC807-40LT1G TRANS PNP 45V 0.5A SOT-23
SBC807-40LT3G Bipolar Transistors - BJT SS GP XSTR SPCL TR
SBC807-40WT1G Bipolar Transistors - BJT SS GP XSTR PNP 45V
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