PartNumber | SIHD14N60E-GE3 | SIHD12N50E-GE3 | SIHD180N60E-GE3 |
Description | MOSFET 600V Vds 30V Vgs DPAK (TO-252) | MOSFET 500V Vds 30V Vgs DPAK (TO-252) | MOSFET 650V Vds; 30V Vgs DPAK (TO-252) |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 500 V | 600 V |
Id Continuous Drain Current | 13 A | 10.5 A | 19 A |
Rds On Drain Source Resistance | 269 mOhms | 380 mOhms | 195 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | 4 V | 3 V |
Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
Qg Gate Charge | 32 nC | 25 nC | 32 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 147 W | 114 W | 156 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Bulk | Reel |
Series | SIH | E | E |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 15 ns | 12 ns | 9 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 19 ns | 16 ns | 22 ns |
Factory Pack Quantity | 3000 | 3000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 35 ns | 29 ns | 23 ns |
Typical Turn On Delay Time | 15 ns | 13 ns | 15 ns |
Unit Weight | 0.011993 oz | 0.050717 oz | - |
Transistor Type | - | - | 1 N-Channel |
Forward Transconductance Min | - | - | 6.5 S |