TC58NVG2S0HBAI6

TC58NVG2S0HBAI6 vs TC58NVG2S0HBAI6JDH vs TC58NVG2S0HBAI6-ND

 
PartNumberTC58NVG2S0HBAI6TC58NVG2S0HBAI6JDHTC58NVG2S0HBAI6-ND
DescriptionNAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)
ManufacturerToshiba--
Product CategoryNAND Flash--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseVFBGA-67--
Memory Size4 Gbit--
Interface TypeParallel--
Organization512 M x 8--
Data Bus Width8 bit--
Supply Voltage Min2.7 V--
Supply Voltage Max3.6 V--
Supply Current Max30 mA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
PackagingTray--
Memory TypeNAND--
BrandToshiba Memory--
Maximum Clock Frequency---
Moisture SensitiveYes--
Product TypeNAND Flash--
Factory Pack Quantity338--
SubcategoryMemory & Data Storage--
제조사 부분 # 설명 RFQ
Toshiba Memory
Toshiba Memory
TC58NVG2S0HBAI6 NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM)
TC58NVG2S0HBAI6JDH 신규 및 오리지널
TC58NVG2S0HBAI6 EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM
TC58NVG2S0HBAI6-ND 신규 및 오리지널
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