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PCG30N60A4W

PCG30N60A4W
Mfr. #:
PCG30N60A4W
제조사:
Eaton Corporation
설명:
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
PCG30N60A4W 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
Tags
PCG3, PCG
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
600V, SMPS IGBT
***rchild Semiconductor
The HGTG30N60A4D is a MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49345.
부분 # 제조 설명 재고 가격
PCG33000F
DISTI # 51K5799		Eaton CorporationTYPE PCG BREAKER FRAME ONLY 3P 3000A 600VAC MAX 100KAIC @6000
  • 50:$144,811.5200
  • 25:$149,946.6900
  • 10:$153,027.7700
  • 5:$156,108.8800
  • 1:$162,271.0600
영상 부분 # 설명
PCG30N60A4W

Mfr.#: PCG30N60A4W

OMO.#: OMO-PCG30N60A4W-1190

 신규 및 오리지널
유효성
재고:
Available
주문 시:
5000
수량 입력:
PCG30N60A4W의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
시작
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