QPD1004SR

Mfr. #:: QPD1004SR
제조사:: Qorvo
설명:: RF JFET Transistors .03-1.2GHz 25W 50V GaN
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: QPD1004SR 데이터 시트
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ECAD Model:
추가 정보:: QPD1004SR 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

얻다:: 20.8 dB

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 50 V

Vgs - 게이트 소스 항복 전압:: 145 V

Id - 연속 드레인 전류:: 3.6 A

출력 파워:: 40 W

최대 드레인 게이트 전압:: 55 V

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

Pd - 전력 손실:: 27.6 W

장착 스타일:: SMD/SMT

패키지/케이스:: DFN-8

포장:: 릴

동작 주파수:: 30 MHz to 1200 MHz

시리즈:: QPD1004

상표:: 코르보

순방향 트랜스컨덕턴스 - 최소:: -

개발 키트:: QPD1004EVB1

습기에 민감한:: 네

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 100

하위 카테고리:: 트랜지스터

부품 번호 별칭:: QPD1004

Tags: QPD100, QPD10, QPD1, QPD

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD1004SR 설명

***et: GaN RF Input-Matched Transistor 25W 50V 30MHz to 1200MHz 8-Pin DFN Reel

***el Electronic: RF JFET Transistors .03-1.2GHz 25W 50V GaN

QPD1004SR 추가 정보

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

Market price

부분 #	제조	설명	재고	가격
QPD1004SR DISTI # 772-QPD1004SR	Qorvo	RF JFET Transistors .03-1.2GHz 25W 50V GaN RoHS: Compliant	21	1:$80.1000 25:$70.7800 100:$62.5400

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