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UJ3D1202TS

UJ3D1202TS
Mfr. #:
UJ3D1202TS
제조사:
UnitedSiC
설명:
Schottky Diodes & Rectifiers 1200V/2A SiC SCHOTTKY DIODE G3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
UJ3D1202TS 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
UJ3D1202TS 추가 정보
제품 속성
속성 값
제조사:
UnitedSiC
제품 카테고리:
쇼트키 다이오드 및 정류기
RoHS:
Y
제품:
쇼트키 탄화규소 다이오드
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-2
If - 순방향 전류:
2 A
Vrrm - 반복적인 역전압:
1200 V
Vf - 순방향 전압:
1.4 V
Ifsm - 순방향 서지 전류:
30 A
구성:
하나의
기술:
SiC
Ir - 역전류:
20 uA
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
UJ3D
자격:
AEC-Q101
포장:
튜브
상표:
UnitedSiC
Pd - 전력 손실:
75 W
상품 유형:
쇼트키 다이오드 및 정류기
공장 팩 수량:
50
하위 카테고리:
다이오드 및 정류기
Vr - 역 전압:
1200 V
Tags
UJ3D120, UJ3D1, UJ3D, UJ3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SiC Cascodes
UnitedSiC SiC Cascodes are the 3rd generation gate drive SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These SiC Cascodes are the enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. The SiC Cascodes offer the best performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). These devices deliver ultra-low gate charge but also the best reverse recovery characteristics of any devices of similar ratings. 
UJ3D Series 650V & 1200V SiC Schottky Diodes
UnitedSiC UJ3D Series 650V and 1200V (Silicon-Carbide) Schottky Diodes are designed to take advantage of of SiC's superior physical characteristics over standard silicon, with 4 times better dynamic characteristics and 15% less forward voltage (VF).  With zero reverse recovery charge and a high maximum junction temperature of 175°C, these devices are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. 
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 신규 및 오리지널
유효성
재고:
30
주문 시:
2013
수량 입력:
UJ3D1202TS의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.65
US$2.65
10
US$2.52
US$25.20
25
US$2.25
US$56.25
50
US$2.09
US$104.50
100
US$2.03
US$203.00
250
US$1.80
US$450.00
500
US$1.58
US$790.00
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