SI4420BDY-T1-GE3

SI4420BDY-T1-GE3
Mfr. #:
SI4420BDY-T1-GE3
제조사:
Vishay
설명:
MOSFET N-CH 30V 9.5A 8-SOIC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SI4420BDY-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SI4420BDY-T1-GE3 추가 정보
제품 속성
속성 값
제조사
비쉐이
제품 카테고리
FET - 단일
포장
부분 별칭
SI4420BDY-GE3
단위 무게
0.006596 oz
장착 스타일
SMD/SMT
패키지 케이스
SOIC-Narrow-8
기술
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
1.4 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
11 ns
상승 시간
11 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
9.5 A
Vds-드레인-소스-고장-전압
30 V
Rds-On-Drain-Source-Resistance
8.5 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
40 ns
일반 켜기 지연 시간
15 ns
채널 모드
상승
Tags
SI4420BDY-T, SI4420B, SI4420, SI442, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 9.5A 8-Pin SOIC N T/R
***ure Electronics
30V, 13.5A, 0.0085ohm,TrenchFET Power MOSFET, N-Channel, SO-8
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:13500mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.011ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:3V; Power Dissipation, Pd:1.4W ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
부분 # 제조 설명 재고 가격
SI4420BDY-T1-GE3
DISTI # SI4420BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 30V 9.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
672In Stock
  • 500:$0.4532
  • 100:$0.6118
  • 10:$0.7930
  • 1:$0.9100
SI4420BDY-T1-GE3
DISTI # SI4420BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 30V 9.5A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Limited Supply - Call
    SI4420BDY-T1-GE3
    DISTI # SI4420BDY-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CH 30V 9.5A 8-SOIC
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 2500:$0.3190
    SI4420BDY-T1-GE3
    DISTI # SI4420BDY-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 30V 9.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4420BDY-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 2500
    Container: Reel
    Americas - 0
    • 2500:$0.8289
    • 5000:$0.8049
    • 10000:$0.7719
    • 15000:$0.7499
    • 25000:$0.7299
    SI4420BDY-T1-GE3
    DISTI # 16P3736
    Vishay IntertechnologiesN CHANNEL MOSFET, 30V, 13.5A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:13.5A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes0
    • 1:$1.2600
    • 10:$1.0400
    • 25:$0.9580
    • 50:$0.8760
    • 100:$0.7940
    • 250:$0.7380
    • 500:$0.6820
    SI4420BDY-T1-GE3
    DISTI # 781-SI4420BDY-T1-GE3
    Vishay IntertechnologiesMOSFET 30V 13.5A 2.5W 8.5mohm @ 10V
    RoHS: Compliant
    2296
    • 1:$1.2600
    • 10:$1.0400
    • 100:$0.7940
    • 500:$0.6820
    • 1000:$0.5390
    • 2500:$0.5030
    • 5000:$0.4780
    • 10000:$0.4670
    SI4420BDY-T1-GE3Vishay Intertechnologies 1458
      영상 부분 # 설명
      SI4420BDY-T1-E3

      Mfr.#: SI4420BDY-T1-E3

      OMO.#: OMO-SI4420BDY-T1-E3

      MOSFET 30V 13.5A 0.0085Ohm
      SI4420BDY-T1-GE3

      Mfr.#: SI4420BDY-T1-GE3

      OMO.#: OMO-SI4420BDY-T1-GE3

      MOSFET 30V 13.5A 2.5W 8.5mohm @ 10V
      SI4420BDY-T1-E3-CUT TAPE

      Mfr.#: SI4420BDY-T1-E3-CUT TAPE

      OMO.#: OMO-SI4420BDY-T1-E3-CUT-TAPE-1190

      신규 및 오리지널
      SI4420BDY

      Mfr.#: SI4420BDY

      OMO.#: OMO-SI4420BDY-1190

      신규 및 오리지널
      SI4420BDY-T1

      Mfr.#: SI4420BDY-T1

      OMO.#: OMO-SI4420BDY-T1-1190

      신규 및 오리지널
      SI4420BDY-T1-E3

      Mfr.#: SI4420BDY-T1-E3

      OMO.#: OMO-SI4420BDY-T1-E3-VISHAY

      MOSFET N-CH 30V 9.5A 8-SOIC
      SI4420BDY-T1-E3-PBF

      Mfr.#: SI4420BDY-T1-E3-PBF

      OMO.#: OMO-SI4420BDY-T1-E3-PBF-1190

      신규 및 오리지널
      SI4420BDY-T1-GE3

      Mfr.#: SI4420BDY-T1-GE3

      OMO.#: OMO-SI4420BDY-T1-GE3-VISHAY

      MOSFET N-CH 30V 9.5A 8-SOIC
      유효성
      재고:
      Available
      주문 시:
      4500
      수량 입력:
      SI4420BDY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.48
      US$0.48
      10
      US$0.45
      US$4.55
      100
      US$0.43
      US$43.07
      500
      US$0.41
      US$203.35
      1000
      US$0.38
      US$382.80
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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