IPB60R060P7ATMA1

Mfr. #:: IPB60R060P7ATMA1
제조사:: Infineon Technologies
설명:: MOSFET HIGH POWER_NEW
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPB60R060P7ATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IPB60R060P7ATMA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-263-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 600 V

Id - 연속 드레인 전류:: 48 A

Rds On - 드레인 소스 저항:: 49 mOhms

Vgs th - 게이트 소스 임계 전압:: 3 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 67 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 164 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

트랜지스터 유형:: 1 N-Channel

상표:: 인피니언 테크놀로지스

가을 시간:: 4 ns

상품 유형:: MOSFET

상승 시간:: 12 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 79 ns

일반적인 켜기 지연 시간:: 23 ns

부품 번호 별칭:: IPB60R060P7 SP001664882

Tags: IPB60R0, IPB60R, IPB60, IPB6, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB60R060P7ATMA1 설명

***ure Electronics: Single N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - D2PAK

***et: CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK

***nell: MOSFET, N-CH, 600V, 48A, TO-263

***ark: Mosfet, N-Ch, 600V, 48A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.049Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

IPB60R060P7ATMA1 추가 정보

600V CoolMOS P7 MOSFETs: Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

Market price

부분 #	제조	설명	재고	가격
IPB60R060P7ATMA1 DISTI # V72:2272_18787574	Infineon Technologies AG	HIGH POWER_NEW	890	500:$3.9910 250:$4.2699 100:$4.6830 25:$4.8540 10:$5.3930 1:$6.9707
IPB60R060P7ATMA1 DISTI # V36:1790_18787574	Infineon Technologies AG	HIGH POWER_NEW	0	1000000:$2.8090 500000:$2.8120 100000:$3.0510 10000:$3.4740 1000:$3.5450
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1692In Stock	500:$4.3294 100:$5.0857 10:$6.2070 1:$6.9100
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1692In Stock	500:$4.3294 100:$5.0857 10:$6.2070 1:$6.9100
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	2000:$3.3677 1000:$3.5449
IPB60R060P7ATMA1 DISTI # 33704475	Infineon Technologies AG	HIGH POWER_NEW	1000	1000:$5.2188
IPB60R060P7ATMA1 DISTI # 32882183	Infineon Technologies AG	HIGH POWER_NEW	890	2:$6.9707
IPB60R060P7ATMA1 DISTI # IPB60R060P7	Infineon Technologies AG	CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: IPB60R060P7) RoHS: Compliant Min Qty: 1000	Asia - 400	50000:$3.4949 25000:$3.5463 10000:$3.5993 5000:$3.6538 3000:$3.7680 2000:$3.8895 1000:$4.0192
IPB60R060P7ATMA1 DISTI # IPB60R060P7ATMA1	Infineon Technologies AG	CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK - Tape and Reel (Alt: IPB60R060P7ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$2.9900 6000:$3.0900 4000:$3.1900 2000:$3.2900 1000:$3.3900
IPB60R060P7ATMA1 DISTI # SP001664882	Infineon Technologies AG	CoolMOS P7 Power MOSFET High Power 60/65mΩ 600V D2-PAK (Alt: SP001664882) RoHS: Compliant Min Qty: 1000	Europe - 0	10000:€2.5900 6000:€2.7900 4000:€2.9900 2000:€3.1900 1000:€3.2900
IPB60R060P7ATMA1 DISTI # 49AC7993	Infineon Technologies AG	MOSFET, N-CH, 600V, 48A, TO-263,Transistor Polarity:N Channel,Continuous Drain Current Id:48A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.049ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	150	500:$4.0400 250:$4.5000 100:$4.7500 50:$4.9900 25:$5.2300 10:$5.4700 1:$6.4400
IPB60R060P7ATMA1 DISTI # 726-IPB60R060P7ATMA1	Infineon Technologies AG	MOSFET HIGH POWER_NEW RoHS: Compliant	592	1:$6.3800 10:$5.4200 100:$4.7000 250:$4.4600 500:$4.0000 1000:$3.3700 2000:$3.2000
IPB60R060P7ATMA1	Infineon Technologies AG	Single N-Channel 600 V 60 mOhm 67 nC CoolMOS Power Mosfet - D2PAK RoHS: Not Compliant	1000Reel	1000:$3.1800
IPB60R060P7ATMA1 DISTI # 2841641	Infineon Technologies AG	MOSFET, N-CH, 600V, 48A, TO-263 RoHS: Compliant	146	1000:$4.8300 500:$4.9300 250:$5.1900 100:$5.4900 10:$6.2100 1:$6.6400
IPB60R060P7ATMA1 DISTI # 2841641	Infineon Technologies AG	MOSFET, N-CH, 600V, 48A, TO-263	406	500:£3.1100 250:£3.4700 100:£3.6500 10:£4.2100 1:£5.4700
IPB60R060P7ATMA1 DISTI # XSFP00000158368	Infineon Technologies AG	Single N-Channel 600 V 60 mOhm 67 nCCoolMOSPowerMosfet - D2PAK RoHS: Compliant	2000 in Stock0 on Order	2000:$4.2400 1000:$4.5400

관련 상품

영상	부분 #	설명
	Mfr.#: XR33052HD-F OMO.#: OMO-XR33052HD-F	RS-422/RS-485 Interface IC 3.0V-5.5V RS-485 RS-422 Transceivers
	Mfr.#: IPD60R180P7ATMA1 OMO.#: OMO-IPD60R180P7ATMA1	MOSFET
	Mfr.#: REF3025AIDBZR OMO.#: OMO-REF3025AIDBZR	Voltage References 2.5V 50ppm/DegC 50uA SOT23-3 Series
	Mfr.#: IRF7749L1TRPBF OMO.#: OMO-IRF7749L1TRPBF	MOSFET N-Ch 60V 1.1mOhm 200nC 2.9V Hexfet
	Mfr.#: STPSC10H065GY-TR OMO.#: OMO-STPSC10H065GY-TR	Schottky Diodes & Rectifiers Automotive 650 V power Schottky silicon carbide diode
	Mfr.#: VB30202C-M3/4W OMO.#: OMO-VB30202C-M3-4W	Schottky Diodes & Rectifiers 30A 200V Trench Stky Rectifier
	Mfr.#: VN800PS-E OMO.#: OMO-VN800PS-E	Power Switch ICs - Power Distribution VIPower High Side 135mOhm 0.7A 36V
	Mfr.#: LTC-2723E OMO.#: OMO-LTC-2723E	LED Displays & Accessories 4 Digit, Orange
	Mfr.#: REF3025AIDBZR OMO.#: OMO-REF3025AIDBZR-TEXAS-INSTRUMENTS	Voltage References 2.5V 50ppm/DegC 50uA SOT23-3 Series
	Mfr.#: IPD60R180P7ATMA1 OMO.#: OMO-IPD60R180P7ATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 650V 18A TO252-3

유효성

재고:: 572
주문 시:: 2555
수량 입력:

IPB60R060P7ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$6.38~~; ~~US$6.38~~

10: ~~US$5.42~~; ~~US$54.20~~

100: ~~US$4.70~~; ~~US$470.00~~

250: ~~US$4.46~~; ~~US$1 115.00~~

500: ~~US$4.00~~; ~~US$2 000.00~~

시작

IPB60R0 24
IPB60R 100
IPB60 105
IPB6 183
IPB 1339

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IPB60R060P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes