A3T19H455W23SR6

Mfr. #:: A3T19H455W23SR6
제조사:: NXP Semiconductors
설명:: RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: A3T19H455W23SR6 데이터 시트
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추가 정보:: A3T19H455W23SR6 추가 정보 A3T19H455W23SR6 Product Details

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

RoHS:: Y

트랜지스터 극성:: 듀얼 N-채널

기술:: 시

Id - 연속 드레인 전류:: 3.6 A

Vds - 드레인 소스 항복 전압:: - 500 mV, 65 V

얻다:: 16.4 dB

출력 파워:: 81 W

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: ACP-1230S-4L2S

포장:: 릴

동작 주파수:: 1930 MHz to 1990 MHz

유형:: RF 전력 MOSFET

상표:: NXP반도체

채널 수:: 2 Channel

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 150

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: - 6 V, 10 V

Vgs th - 게이트 소스 임계 전압:: 1.4 V

부품 번호 별칭:: 935363503128

Tags: A3T1, A3T

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We provide 90-360 days warranty.

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Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A3T19H455W23SR6 추가 정보

Airfast® Third-Generation Power Amplifiers: NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.

Market price

부분 #	제조	설명	재고	가격
A3T19H455W23SR6 DISTI # A3T19H455W23SR6-ND	NXP Semiconductors	AIRFAST RF POWER LDMOS TRANSISTO RoHS: Compliant Min Qty: 150 Container: Tape & Reel (TR)	Temporarily Out of Stock	150:$119.7000
A3T19H455W23SR6 DISTI # A3T19H455W23SR6	Avnet, Inc.	Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V - Tape and Reel (Alt: A3T19H455W23SR6) RoHS: Compliant Min Qty: 150 Container: Reel	Americas - 0
A3T19H455W23SR6 DISTI # 51AC1917	NXP Semiconductors	AIRFAST RF POWER LDMOS TRANSISTOR, 1930-1990 MHZ, 81 W AVG., 30 V REEL	0	100:$112.5000 50:$119.7000 25:$121.5000 10:$123.3000 5:$126.9000 1:$130.5000
A3T19H455W23SR6 DISTI # 771-A3T19H455W23SR6	NXP Semiconductors	RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 1930-1990 MHz, 81 W Avg., 30 V RoHS: Compliant	0	150:$111.3500

A3T19H455W23SR6

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes