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IPB80N06S407ATMA2

IPB80N06S407ATMA2
Mfr. #:
IPB80N06S407ATMA2
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 60V 80A D2PAK-2
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB80N06S407ATMA2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB80N06S407ATMA2 DatasheetIPB80N06S407ATMA2 Datasheet (P4-P6)IPB80N06S407ATMA2 Datasheet (P7-P9)
ECAD Model:
추가 정보:
IPB80N06S407ATMA2 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
60 V
Id - 연속 드레인 전류:
80 A
Rds On - 드레인 소스 저항:
7.1 mOhms
구성:
하나의
자격:
AEC-Q101
포장:
릴
키:
4.4 mm
길이:
10 mm
시리즈:
IPB80N06S4
트랜지스터 유형:
1 N-Channel
너비:
9.25 mm
상표:
인피니언 테크놀로지스
상품 유형:
MOSFET
공장 팩 수량:
1000
하위 카테고리:
MOSFET
부품 번호 별칭:
IPB80N06S4-07 IPB8N6S47XT SP001028672
단위 무게:
0.068654 oz
Tags
IPB80N06S40, IPB80N06S4, IPB80N06, IPB80N0, IPB80N, IPB8, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
***et Europe
Trans MOSFET N-CH 80V 80A 3-Pin(2+Tab) TO-263
***ronik
MOSFET 60V 7.1mOHM AECQ TO263 RoHSconf
***Components
MOSFET N-Ch 80V 80A OptiMOS-T2 TO-263
***i-Key
MOSFET N-CH 60V 80A TO263-3
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
부분 # 제조 설명 재고 가격
IPB80N06S407ATMA2
DISTI # V72:2272_06384392		Infineon Technologies AGTrans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		900
  • 500:$0.7607
  • 250:$0.8680
  • 100:$0.8769
  • 25:$1.1465
  • 10:$1.1580
  • 1:$1.5009
IPB80N06S407ATMA2
DISTI # V36:1790_06384392		Infineon Technologies AGTrans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
    IPB80N06S407ATMA2
    DISTI # IPB80N06S407ATMA2-ND    		Infineon Technologies AGMOSFET N-CH 60V 80A TO263-3
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 1000:$0.6657
    IPB80N06S407ATMA2
    DISTI # 30163392    		Infineon Technologies AGTrans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		2000
    • 1000:$0.5269
    IPB80N06S407ATMA2
    DISTI # 29561229    		Infineon Technologies AGTrans MOSFET N-CH 60V 80A Automotive 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant    		900
    • 12:$1.5009
    IPB80N06S407ATMA2
    DISTI # IPB80N06S407ATMA2    		Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S407ATMA2)
    RoHS: Compliant
    Min Qty: 1000
    Container: Reel    		Americas - 0
    • 10000:$0.5369
    • 6000:$0.5459
    • 4000:$0.5649
    • 2000:$0.5869
    • 1000:$0.6089
    IPB80N06S407ATMA2
    DISTI # IPB80N06S407ATMA2    		Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R - Bulk (Alt: IPB80N06S407ATMA2)
    RoHS: Compliant
    Min Qty: 676
    Container: Bulk    		Americas - 0
    • 6760:$0.4699
    • 3380:$0.4779
    • 2028:$0.4949
    • 1352:$0.5129
    • 676:$0.5329
    IPB80N06S407ATMA2
    DISTI # SP001028672    		Infineon Technologies AGTrans MOSFET N-CH 60V 80A 3-Pin TO-263 T/R (Alt: SP001028672)
    RoHS: Compliant
    Min Qty: 1000
    Container: Tape and Reel    		Europe - 0
    • 10000:€0.5019
    • 6000:€0.5409
    • 4000:€0.5859
    • 2000:€0.6389
    • 1000:€0.7819
    IPB80N06S407ATMA2
    DISTI # 726-IPB80N06S407ATMA    		Infineon Technologies AGMOSFET N-Ch 60V 80A D2PAK-2
    RoHS: Compliant    		639
    • 1:$1.3800
    • 10:$1.1800
    • 100:$0.9090
    • 500:$0.8040
    • 1000:$0.6350
    • 2000:$0.5630
    • 10000:$0.5420
    IPB80N06S4-07
    DISTI # 726-IPB80N06S4-07    		Infineon Technologies AGMOSFET N-Ch 60V 80A D2PAK-2 OptiMOS-T2
    RoHS: Compliant    		0
      IPB80N06S407ATMA2Infineon Technologies AGPower Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Compliant      		130
      • 1000:$0.4900
      • 500:$0.5100
      • 100:$0.5300
      • 25:$0.5600
      • 1:$0.6000
      IPB80N06S407ATMA2
      DISTI # 8269440P      		Infineon Technologies AGMOSFET N-CH 80A 60V OPTIMOS-T2 TO263, RL750
      • 250:£0.4190
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      IPD15N06S2L64ATMA2

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      유효성
      재고:
      639
      주문 시:
      2622
      수량 입력:
      IPB80N06S407ATMA2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.38
      US$1.38
      10
      US$1.18
      US$11.80
      100
      US$0.91
      US$90.90
      500
      US$0.80
      US$402.00
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