2SC3646S-TD-E

Mfr. #:: 2SC3646S-TD-E
제조사:: ON Semiconductor
설명:: Bipolar Transistors - BJT BIP NPN 1A 100V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 2SC3646S-TD-E 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: PCP-3

트랜지스터 극성:: NPN

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 100 V

컬렉터-베이스 전압 VCBO:: 120 V

이미터-베이스 전압 VEBO:: 6 V

수집기-이미터 포화 전압:: 0.1 V

최대 DC 수집기 전류:: 2 A

이득 대역폭 곱 fT:: 120 MHz

최대 작동 온도:: + 150 C

시리즈:: 2SC3646

DC 전류 이득 hFE 최대:: 280

포장:: 릴

상표:: 온세미컨덕터

지속적인 수집가 전류:: 1 A

DC 수집기/기본 이득 hfe 최소:: 140

Pd - 전력 손실:: 1.3 W

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 1000

하위 카테고리:: 트랜지스터

단위 무게:: 0.001812 oz

Tags: 2SC3646S-T, 2SC3646S, 2SC3646, 2SC364, 2SC36, 2SC3, 2SC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SC3646S-TD-E 설명

***emi: Bipolar Transistor, 100V, 1A, Low VCE(sat), (PNP)NPN Single PCP hFE = 140 - 280

***(Formerly Allied Electronics): ON Semi 2SC3646S-TD-E NPN Bipolar Transistor; 1 A; 100 V; 3-Pin PCP

***r Electronics: Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA

***Yang: Trans GP BJT NPN 100V 1A 4-Pin(3+Tab) PCP T/R - Tape and Reel

***enic: 100V 500mW 1A 120MHz 200mV@400mA40mA NPN +150¡Í@(Tj) PCP(SOT-89) Bipolar Transistors - BJT ROHS

***ure Electronics: Bipolar Transistors - BJT BIP NPN 1A 100V

***nell: TRANSISTOR, NPN, 100V, 1A, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Typ Gain Bandwidth ft:120MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:280; Transistor Case Style:SOT-89; No. of Pins:3

***C: Trans GP BJT NPN 100V 1A 3-Pin SOT-23 T/R Trans GP BJT NPN 100V 1A 3-Pin SOT-23 T/R

***ure Electronics: FMMT493 Series NPN 1 A 100 V SMT Silicon Medium Power Transistor - SOT-23

***S.I.T. Europe - USA - Asia: Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon

***nell: TRANSISTOR, NPN, REEL 3K; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 500mW; DC Collector Current: 1A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Continuous Collector Current Ic Max: 1A; Current Ic Continuous a Max: 1A; Current Ic hFE: 250mA; Device Marking: MT493; Gain Bandwidth ft Min: 150MHz; Gain Bandwidth ft Typ: 150MHz; Hfe Min: 100; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 500mW; Reel Quantity: 3000; SMD Marking: 493; Tape Width: 8mm; Termination Type: Surface Mount Device; Voltage Vcbo: 120V

***emi: Bipolar Transistor, 100V, 1A, Low VCE(sat), (PNP)NPN Single NMP

***(Formerly Allied Electronics): ON Semi 2SC4488S-AN NPN Bipolar Transistor; 1 A; 100 V; 3-Pin NMP

***el Electronic: Bipolar Transistors - BJT BIP NPN 1A 100V

***et: Trans GP BJT NPN 100V 1A 3-Pin NMP T/R

***emi: Bipolar Transistor, 100V, 1A, Low VCE(sat), (PNP)NPN Single PCP hFE = 200 - 400

***(Formerly Allied Electronics): ON Semi 2SC3646T-TD-E NPN Bipolar Transistor; 1 A; 100 V; 3-Pin PCP

***r Electronics: Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA

***Yang: Trans GP BJT NPN 100V 1A 3-Pin SC-62 T/R - Tape and Reel

***nell: TRANSISTOR, NPN, 100V, 1A, SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Typ Gain Bandwidth ft:120MHz; Power Dissipation Pd:500mW; DC Collector Current:1A; DC Current Gain hFE:400; Transistor Case Style:SOT-89; No. of Pins:3

***emi: Bipolar Transistor, 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA

***r Electronics: Small Signal Bipolar Transistor, 1A I(C), 1-Element, NPN

***et: Trans GP BJT NPN 100V 1A 3-Pin(3+Tab) TP Bag

***roFlash: Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin

*** Source Electronics: Trans GP BJT PNP 80V 1A 2000mW 4-Pin(3+Tab) SOT-89 T/R / TRANS PNP 80V 1A SOT-89

***ure Electronics: BCX5316 Series 1 A 80 V SMT PNP Silicon Planar Medium Power Transistor - SOT-89

***el Electronic: Bipolar Transistors - BJT PNP Medium Power

***ment14 APAC: TRANSISTOR, PNP, 80V, SOT-89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:150MHz; Power Dissipation Pd:1W; DC Collector Current:500mA; DC Current Gain hFE:100; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1A; Current Ic Continuous a Max:1A; Current Ic hFE:150mA; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:150MHz; Hfe Min:100; Package / Case:SOT-89; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Pulsed Current Icm:1.5A; Termination Type:SMD; Voltage Vcbo:100V

***C: Trans GP BJT NPN 100V 1A 4-Pin(3+Tab) SOT-89 T/R Trans GP BJT NPN 100V 1A 4-Pin(3+Tab) SOT-89 T/R

***ure Electronics: FCX493 Series NPN 1 A 100 V SMT Silicon Medium Power Transistor - SOT-89-3

***nell: TRANSISTOR, NPN, 100V, 1A, SOT89; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 150MHz; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C

Market price

부분 #	제조	설명	재고	가격
2SC3646S-TD-E DISTI # V72:2272_07277498	ON Semiconductor	Trans GP BJT NPN 100V 1A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant	557	75000:$0.1363 30000:$0.1394 15000:$0.1424 6000:$0.1455 3000:$0.1486 1000:$0.1517 500:$0.1622 250:$0.1802 100:$0.2002 50:$0.2949 25:$0.3604 10:$0.3605 1:$0.4237
2SC3646S-TD-E DISTI # 2SC3646S-TD-EOSCT-ND	ON Semiconductor	TRANS NPN 100V 1A SOT89-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2160In Stock	500:$0.2184 100:$0.2780 10:$0.3720 1:$0.4300
2SC3646S-TD-E DISTI # 2SC3646S-TD-EOSDKR-ND	ON Semiconductor	TRANS NPN 100V 1A SOT89-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2160In Stock	500:$0.2184 100:$0.2780 10:$0.3720 1:$0.4300
2SC3646S-TD-E DISTI # 2SC3646S-TD-EOSTR-ND	ON Semiconductor	TRANS NPN 100V 1A SOT89-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	2000In Stock	25000:$0.1285 10000:$0.1301 5000:$0.1398 2000:$0.1494 1000:$0.1639
2SC3646S-TD-E DISTI # 25771081	ON Semiconductor	Trans GP BJT NPN 100V 1A 4-Pin(3+Tab) SOT-89 T/R RoHS: Compliant	557	30000:$0.1468 15000:$0.1509 6000:$0.1550 3000:$0.1591 1000:$0.1631 500:$0.1744 250:$0.1937 100:$0.2152 50:$0.3166 45:$0.3518
2SC3646S-TD-E DISTI # 2SC3646S-TD-E	ON Semiconductor	Trans GP BJT NPN 100V 1A 4-Pin(3+Tab) PCP T/R (Alt: 2SC3646S-TD-E) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 3000	10000:€0.1009 6000:€0.1079 4000:€0.1279 2000:€0.1569 1000:€0.2019
2SC3646S-TD-E DISTI # 2SC3646S-TD-E	ON Semiconductor	Trans GP BJT NPN 100V 1A 4-Pin(3+Tab) PCP T/R - Bulk (Alt: 2SC3646S-TD-E) Min Qty: 2084 Container: Bulk	Americas - 0	20840:$0.1479 10420:$0.1509 6252:$0.1529 4168:$0.1549 2084:$0.1559
2SC3646S-TD-E DISTI # 2SC3646S-TD-E	ON Semiconductor	Trans GP BJT NPN 100V 1A 4-Pin(3+Tab) PCP T/R - Tape and Reel (Alt: 2SC3646S-TD-E) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	40000:$0.1369 20000:$0.1409 12000:$0.1429 8000:$0.1449 4000:$0.1459
2SC3646S-TD-E DISTI # 65T2474	ON Semiconductor	BIP NPN 1A 100V / REEL	0	9000:$0.1470 3000:$0.1570 1000:$0.1820 500:$0.2190 250:$0.2250 100:$0.2320 25:$0.3620 1:$0.4900
2SC3646S-TD-E DISTI # 99AC6851	ON Semiconductor	TRANSISTOR, NPN, 100V, 1A, SOT-89,Transistor Polarity:NPN,Collector Emitter Voltage V(br)ceo:100V,Transition Frequency ft:120MHz,Power Dissipation Pd:1.3W,DC Collector Current:1A,DC Current Gain hFE:140hFE,Transistor Case RoHS Compliant: Yes	2025	100:$0.2030 50:$0.2470 25:$0.2910 10:$0.3340 1:$0.3940
2SC3646S-TD-E DISTI # 70341645	ON Semiconductor	ON Semi 2SC3646S-TD-E NPN Bipolar Transistor,1 A,100 V,3-Pin PCP RoHS: Compliant	0	100:$0.1560 250:$0.1530 500:$0.1500 1000:$0.1470
2SC3646S-TD-E DISTI # 863-2SC3646S-TD-E	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 1A 100V RoHS: Compliant	3832	1:$0.3900 10:$0.3310 100:$0.2010 1000:$0.1560 2000:$0.1330 10000:$0.1320
2SC3646S-P-TD-E DISTI # 863-2SC3646S-P-TD-E	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 1A 100V RoHS: Compliant	0	1:$0.6600 10:$0.5540 100:$0.3570 1000:$0.2860 2000:$0.2410 10000:$0.2330 25000:$0.2240
2SC3646S-TD-E	ON Semiconductor	Small Signal Bipolar Transistor, 1A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA RoHS: Compliant	3503	1000:$0.1600 100:$0.1700 500:$0.1700 25:$0.1800 1:$0.1900
2SC3646S-TD-E DISTI # 7740691P	ON Semiconductor	TRANSISTOR NPN 100V 1A HFE140-280 SOT89, RL	50	100:£0.1580
2SC3646S-TD-E	ON Semiconductor		346
2SC3646S-TD-E DISTI # 2724339	ON Semiconductor	TRANSISTOR, NPN, 100V, 1A, SOT-89 RoHS: Compliant	2025	500:$0.3320 100:$0.4220 10:$0.5640 1:$0.6530
2SC3646S-TD-E DISTI # 2724339	ON Semiconductor	TRANSISTOR, NPN, 100V, 1A, SOT-89	2040	500:£0.1190 250:£0.1370 100:£0.1540 25:£0.2710 5:£0.3170
2SC3646S-TD-E	ON Semiconductor	100V,1A,NPN Single Bipolar Transistor	104	1:$0.2500 100:$0.1900 500:$0.1800 1000:$0.1700

영상	부분 #	설명
	Mfr.#: 2SA1416S-TD-E OMO.#: OMO-2SA1416S-TD-E	Bipolar Transistors - BJT BIP PNP 1A 100V
	Mfr.#: TIP142G OMO.#: OMO-TIP142G	Darlington Transistors 10A 100V Bipolar Power NPN
	Mfr.#: USB2514B/M2 OMO.#: OMO-USB2514B-M2	USB Interface IC 4-Port USB 2.0 Hi-Speed Hub Cont
	Mfr.#: CLF12577NIT-100M-D OMO.#: OMO-CLF12577NIT-100M-D	Fixed Inductors 10uH +/-20% AECQ200 -55 to +150C
	Mfr.#: GRM219R60J476ME44D OMO.#: OMO-GRM219R60J476ME44D	Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 47uF 6.3volts *Derate Voltage/Temp
	Mfr.#: SFM-140-02-S-D-A OMO.#: OMO-SFM-140-02-S-D-A	Headers & Wire Housings .050" Tiger Eye High-Reliability Socket Strip
	Mfr.#: TIP142G OMO.#: OMO-TIP142G-ON-SEMICONDUCTOR	Darlington Transistors 10A 100V Bipolar Power NPN
	Mfr.#: GRM219R60J476ME44D OMO.#: OMO-GRM219R60J476ME44D-MURATA-ELECTRONICS	MULTILAYER CERAMIC CAPACITOR
	Mfr.#: ABM12W-27.0000MHZ-6-B1U-T3 OMO.#: OMO-ABM12W-27-0000MHZ-6-B1U-T3-ABRACON	CRYSTAL 27.0000MHZ 6PF SMD
	Mfr.#: 2SA1416S-TD-E OMO.#: OMO-2SA1416S-TD-E-ON-SEMICONDUCTOR	Bipolar Transistors - BJT BIP PNP 1A 100V

2SC3646S-TD-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes