SI4431CDY-T1-E3

Mfr. #:: SI4431CDY-T1-E3
제조사:: Vishay
설명:: MOSFET P-CH 30V 9A 8SOIC
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4431CDY-T1-E3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SI4431CDY-T1-E3 추가 정보

제품 속성
속성 값

제조사: 비쉐이

제품 카테고리: FET - 단일

포장: 릴

부분 별칭: SI4431CDY-E3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: SOIC-Narrow-8

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 P-Channel

Pd 전력 손실: 2.5 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 9 ns 11 ns

상승 시간: 13 ns 89 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 7 A

Vds-드레인-소스-고장-전압: - 30 V

Rds-On-Drain-Source-Resistance: 32 mOhms

트랜지스터 극성: P-채널

일반 꺼짐 지연 시간: 23 ns 22 ns

일반 켜기 지연 시간: 10 ns 38 ns

채널 모드: 상승

Tags: SI4431CDY-T1, SI4431CDY-T, SI4431C, SI4431, SI443, SI44, SI4

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4431CDY-T1-E3 설명

***ure Electronics: Single P-Channel 30 V 2.5 W 38 nC Silicon Surface Mount Mosfet - SOIC-8

***ical: Trans MOSFET P-CH 30V 9A 8-Pin SOIC N T/R

***i-Key: MOSFET P-CH 30V 9A 8SOIC

***ark: Transistor Polarity:p Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.026Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power Dissipation Pd:4.2W; No. Of Pins:8Pins Rohs Compliant: No

SI4431CDY-T1-E3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4431CDY-T1-E3 DISTI # V72:2272_09216489	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2426	1000:$0.3957 500:$0.4347 250:$0.4737 100:$0.4739 25:$0.6091 10:$0.6098 1:$0.7477
SI4431CDY-T1-E3 DISTI # V36:1790_09216489	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	0
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2041In Stock	1000:$0.5588 500:$0.6993 100:$0.8924 10:$1.1210 1:$1.2600
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2041In Stock	1000:$0.5588 500:$0.6993 100:$0.8924 10:$1.1210 1:$1.2600
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 30V 9A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	12500:$0.4675 5000:$0.4845 2500:$0.5084
SI4431CDY-T1-E3 DISTI # 31749187	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R RoHS: Compliant	2426	1000:$0.4254 500:$0.4673 250:$0.5092 100:$0.5094 25:$0.6548 15:$0.6555
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R (Alt: SI4431CDY-T1-E3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4431CDY-T1-E3 DISTI # SI4431CDY-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4431CDY-T1-E3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2911 5000:$0.2825 10000:$0.2710 15000:$0.2635 25000:$0.2564
SI4431CDY-T1-E3 DISTI # 33P5257	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET	0	50000:$0.3160 30000:$0.3300 20000:$0.3550 10000:$0.3790 5000:$0.4110 1:$0.4210
SI4431CDY-T1-E3. DISTI # 23AC9598	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.026ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,Power Dissipation Pd:4.2W,No. of Pins:8Pins RoHS Compliant: No	0	50000:$0.3160 30000:$0.3300 20000:$0.3550 10000:$0.3790 5000:$0.4110 1:$0.4210
SI4431CDY-T1-E3 DISTI # 781-SI4431CDY-E3	Vishay Intertechnologies	MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant	3041	1:$0.8000 10:$0.6380 100:$0.4850
SI4431CDY-T1-E3	Vishay Intertechnologies		999	201:$0.8000 51:$1.0000 1:$2.0000
SI4431CDYT1E3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 1990

관련 상품

영상	부분 #	설명
	Mfr.#: SI4431CDY-T1-GE3 OMO.#: OMO-SI4431CDY-T1-GE3	MOSFET -30V Vds 20V Vgs SO-8
	Mfr.#: SI4431CDY-T1-E3 OMO.#: OMO-SI4431CDY-T1-E3	MOSFET -30V Vds 20V Vgs SO-8
	Mfr.#: SI4431CDY OMO.#: OMO-SI4431CDY-1190	신규 및 오리지널
	Mfr.#: SI4431CDY-GE3-S OMO.#: OMO-SI4431CDY-GE3-S-1190	신규 및 오리지널
	Mfr.#: SI4431CDY-T1-E3 OMO.#: OMO-SI4431CDY-T1-E3-VISHAY	MOSFET P-CH 30V 9A 8SOIC
	Mfr.#: SI4431CDY-T1-GE3 OMO.#: OMO-SI4431CDY-T1-GE3-VISHAY	MOSFET P-CH 30V 9A 8-SOIC
	Mfr.#: SI4431CDY-T1-GE3-S OMO.#: OMO-SI4431CDY-T1-GE3-S-1190	신규 및 오리지널
	Mfr.#: SI4431CDY-TI-GE3 OMO.#: OMO-SI4431CDY-TI-GE3-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 3500
수량 입력:

SI4431CDY-T1-E3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.38~~; ~~US$0.38~~

10: ~~US$0.37~~; ~~US$3.65~~

100: ~~US$0.35~~; ~~US$34.62~~

500: ~~US$0.33~~; ~~US$163.45~~

1000: ~~US$0.31~~; ~~US$307.70~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SI4431CDY-T1 3
SI4431CDY-T 4
SI4431C 6
SI4431 34
SI443 128
SI44 574
SI4 2994

SI4431CDY-T1-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes