TC58BYG2S0HBAI6

Mfr. #:: TC58BYG2S0HBAI6
제조사:: Toshiba Memory
설명:: NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TC58BYG2S0HBAI6 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: TC58BYG2S0HBAI6 추가 정보

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: 낸드 플래시

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: VFBGA-67

메모리 크기:: 4 Gbit

인터페이스 유형:: 평행 한

조직:: 512 M x 8

데이터 버스 폭:: 8 bit

공급 전압 - 최소:: 1.7 V

공급 전압 - 최대:: 1.95 V

공급 전류 - 최대:: 30 mA

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

포장:: 쟁반

메모리 유형:: 낸드

상표:: 도시바 메모리

최대 클록 주파수:: -

습기에 민감한:: 네

상품 유형:: 낸드 플래시

공장 팩 수량:: 338

하위 카테고리:: 메모리 및 데이터 저장

Tags: TC58BYG2, TC58BY, TC58B, TC58, TC5

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TC58BYG2S0HBAI6 설명

***ical: NAND Flash Parallel 1.8V 4G-bit 512M x 8 67-Pin VFBGA

***et: 4Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V

***or: IC FLASH 4GBIT PARALLEL 67VFBGA

***ical: SLC NAND Flash Parallel 1.8V 1G-bit 128M x 8 Tray

***enic: BGA-67(8x6.5) NAND FLASH ROHS

***i-Key: IC FLASH 1GBIT PARALLEL 67BGA

***ca Corp: Flash, 128MX8, PBGA67

***pmh: FLASH, 256MX8, PDSO48

***et: 4-BIT ECC X8 I/O AND 1.8V VCC SPANSION

***horized Procurement Solutions: OEMs, CMs ONLY (NO BROKERS)

***-Wing Technology: Discontinued 2016 BOTTOM Non-Volatile FLASH Memory -40C~85C TA 1.7V 2147483648bit 6.5mm

***ark: TRAY PKGED / 2GB, 4-BIT ECC, X8 I/O AND 1.8V VCC SPANSIONA(R) SLC NAND FLASH MEMORY IN BGA 67-BALL

***ical: SLC NAND Flash Parallel 1.8V 2G-bit 256M x 8 Tray

***pmh: 71V124 - 3.3V STATIC RAM 1 MEG (

***et: 2GB, 4-BIT ECC, X8 I/O AND 1.8

***ark: TRAY PKGED / 4-BIT ECC, X8 I/O AND 3V VCC SPANSIONA(R) SLC NAND FLASH MEMORY, BGA

***ical: SLC NAND Flash Parallel 3V/3.3V 1G-bit 64M x 16 67-Pin BGA Tray

***pmh: NOR FLASH SERIAL-SPI 3V/3.3V 32M

TC58BYG2S0HBAI6 추가 정보

SLC NAND and BENAND: Toshiba SLC NAND and BENAND provide best-in-class endurance and data retention for sensitive or frequently used system data. Toshiba SLC are the optimal solution for long lasting products or systems working with extremely high data throughput between the host and the memory.

Market price

부분 #	제조	설명	재고	가격
TC58BYG2S0HBAI6 DISTI # V99:2348_18853859	Toshiba America Electronic Components	NAND Flash Serial 1.8V 4G-bit 512M x 8 67-Pin VFBGA	54	2500:$3.2800 1000:$3.3730 500:$3.5060 250:$3.6570 100:$3.7020 50:$4.0780 10:$4.1460 1:$4.5210
TC58BYG2S0HBAI6 DISTI # TC58BYG2S0HBAI6-ND	Toshiba Semiconductor and Storage Products	IC FLASH 4G PARALLEL 67VFBGA RoHS: Compliant Min Qty: 1 Container: Tray	188In Stock	1014:$3.6619 676:$3.8246 338:$4.0793 100:$4.0950 50:$4.5648 25:$4.5964 10:$4.6860 1:$5.1300
TC58BYG2S0HBAI6 DISTI # TC58BYG2S0HBAI6	Toshiba America Electronic Components	4Gbit, generation: 24nm, ECC logic on the chip, VCC=1.7 to 1.95V - Trays (Alt: TC58BYG2S0HBAI6) RoHS: Compliant Min Qty: 338 Container: Tray	Americas - 0	338:$3.8900 676:$3.7900 1352:$3.6900 2028:$3.6900 3380:$3.5900
TC58BYG2S0HBAI6 DISTI # 757-TC58BYG2S0HBAI6	Toshiba America Electronic Components	NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) RoHS: Compliant	385	1:$4.9000 10:$4.4700 50:$4.3500 100:$3.9100 250:$3.8900 500:$3.6500 1000:$3.4900

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