NGTB35N65FL2WG

Mfr. #:: NGTB35N65FL2WG
제조사:: ON Semiconductor
설명:: IGBT Transistors 650V/35A FAST IGBT FSII T
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NGTB35N65FL2WG 데이터 시트
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HTML Datasheet:: NGTB35N65FL2WG Datasheet NGTB35N65FL2WG Datasheet (P4-P6)NGTB35N65FL2WG Datasheet (P7-P8)
ECAD Model:
추가 정보:: NGTB35N65FL2WG 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: IGBT 트랜지스터

RoHS:: Y

기술:: 시

패키지/케이스:: TO-247-3

장착 스타일:: 구멍을 통해

구성:: 하나의

컬렉터-이미터 전압 VCEO 최대:: 650 V

수집기-이미터 포화 전압:: 2.2 V

최대 게이트 이미터 전압:: 20 V

25C에서 연속 수집기 전류:: 70 A

Pd - 전력 손실:: 300 W

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

포장:: 튜브

연속 수집가 현재 IC 최대:: 70 A

상표:: 온세미컨덕터

게이트-이미터 누설 전류:: 200 nA

상품 유형:: IGBT 트랜지스터

공장 팩 수량:: 30

하위 카테고리:: IGBT

단위 무게:: 1.340411 oz

Tags: NGTB35, NGTB3, NGTB, NGT

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Quality Guarantees

We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB35N65FL2WG 설명

***ical: Trans IGBT Chip N-CH 650V 70A 300000mW 3-Pin(3+Tab) TO-247 Tube

***ied Electronics & Automation: NGTB35N65FL2WG; IGBT Transistor; 70 A 650 V; 1MHz; 3-Pin TO-247

***ure Electronics: NGTB35N65: 650 V 70 A 300 W Through Hole Field Stop II IGBT - TO-247-3

***nell: 650V/35A FAST IGBT FSII T; DC Collector Current: 70A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 300W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

NGTB35N65FL2WG 추가 정보

Field Stop II Series IGBTs: ON Semiconductor's Field Stop II Series IGBTs feature a robust and cost effective Field Stop II Trench construction, and provides superior performance, offering both low on state voltage and minimal switching loss. Features include extremely efficient trench, short circuit capable, available in rates of 15A to 75A, reduction in switching losses, and reduction in input capacitance. These IGBTs are well suited for UPS, solar, half bridge resonant, or demanding switching applications. Incorporated into each device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Learn More

Market price

부분 #	제조	설명	재고	가격
NGTB35N65FL2WG DISTI # NGTB35N65FL2WGOS-ND	ON Semiconductor	IGBT 650V 70A 300W TO247 RoHS: Compliant Min Qty: 1 Container: Tube	107In Stock	1020:$1.6464 510:$1.9522 120:$2.2932 30:$2.6460 1:$3.1200
NGTB35N65FL2WG DISTI # NGTB35N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Bulk (Alt: NGTB35N65FL2WG) Min Qty: 202 Container: Bulk	Americas - 0	202:$1.5900 204:$1.5900 406:$1.4900 1010:$1.4900 2020:$1.4900
NGTB35N65FL2WG DISTI # NGTB35N65FL2WG	ON Semiconductor	Trans IGBT Chip N-CH 650V 70A 3-Pin TO-247 Tube - Rail/Tube (Alt: NGTB35N65FL2WG) RoHS: Compliant Min Qty: 1 Container: Tube	Americas - 0	1:$1.3900 10:$1.3900 25:$1.3900 50:$1.3900 100:$1.3900 500:$1.3900 1000:$1.2900
NGTB35N65FL2WG. DISTI # 61AC1092	ON Semiconductor	DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:300W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes	21	1000:$1.2900 1:$1.3900
NGTB35N65FL2WG DISTI # 70547360	ON Semiconductor	NGTB35N65FL2WG,IGBT Transistor,70 A 650 V,1MHz,3-Pin TO-247 RoHS: Compliant	0	2:$2.9600 20:$2.8200 50:$2.6800 100:$2.5500 200:$2.4200
NGTB35N65FL2WG DISTI # 863-NGTB35N65FL2WG	ON Semiconductor	IGBT Transistors 650V/35A FAST IGBT FSII T RoHS: Compliant	901	1:$2.9700 10:$2.5200 100:$2.1900 250:$2.0800 500:$1.8600 1000:$1.5700 2500:$1.4900 5000:$1.4400
NGTB35N65FL2WG	ON Semiconductor	Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel RoHS: Compliant	210	1000:$1.6300 500:$1.7200 100:$1.7900 25:$1.8700 1:$2.0100
NGTB35N65FL2WG DISTI # 8427898P	ON Semiconductor	IGBT FIELD STOP II 650V 35A DIODE TO247, TU	284	40:£1.7950 20:£1.8900
NGTB35N65FL2WG	ON Semiconductor		2361

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