FDFME2P823ZT

Mfr. #:: FDFME2P823ZT
제조사:: ON Semiconductor
설명:: IGBT Transistors MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDFME2P823ZT 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 페어차일드 반도체

제품 카테고리: 트랜지스터 - FET, MOSFET - 단일

포장: 릴

단위 무게: 0.000889 oz

장착 스타일: SMD/SMT

패키지 케이스: microFET-6

기술: 시

채널 수: 2 Channel

구성: 쇼트키 다이오드가 있는 싱글

트랜지스터형: 2 P-Channel

Pd 전력 손실: 1.3 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 16 ns

상승 시간: 4.8 ns

Vgs 게이트 소스 전압: +/- 8 V

Id-연속-드레인-전류: - 2.3 A

Vds-드레인-소스-고장-전압: - 20 V

Vgs-th-Gate-Source-Threshold-Voltage: - 0.6 V

Rds-On-Drain-Source-Resistance: 95 mOhms

트랜지스터 극성: P-채널

일반 꺼짐 지연 시간: 33 ns

일반 켜기 지연 시간: 4.7 ns

Qg-Gate-Charge: 5.5 nC

순방향 트랜스컨덕턴스-최소: 7 S

Tags: FDFME, FDFM, FDF

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDFME2P823ZT 설명

***p One Stop Global: Trans MOSFET P-CH 20V 2.3A 6-Pin MicroFET T/R

***nell: MOSFET, P CH, 20V, 2.6A, 6MICROFET; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.6A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.095ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-600mV; Power Dissipation Pd:1.4W; Transistor Case Style:µFET; No. of Pins:6Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C

***rchild Semiconductor: This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable appliacrions. It features as MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum condution losses. The MicroFET 1.6x1.6 Thin package offers exceptional thermal performance for it's physical size and is well suited to switching and linear mode applications.

Market price

부분 #	제조	설명	재고	가격
FDFME2P823ZT DISTI # FDFME2P823ZTTR-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Limited Supply - Call
FDFME2P823ZT DISTI # FDFME2P823ZTCT-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDFME2P823ZT DISTI # FDFME2P823ZTDKR-ND	ON Semiconductor	MOSFET P-CH 20V 2.6A 6MICROFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDFME2P823ZT	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	40000	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3400 1:$0.3600
FDFME2P823ZT DISTI # 512-FDFME2P823ZT	ON Semiconductor	MOSFET -20V Integrated P-Ch PwrTrnch w/Sch Diode RoHS: Compliant	0

FDFME2P823ZT

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes