SI8808DB-T2-E1

Name: Vishay - SI8808DB-T2-E1
Brand: Vishay
SKU: OMO-3402344
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8808DB-T2-E1
제조사:: Vishay
설명:: MOSFET N-CH 30V MICROFOOT
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI8808DB-T2-E1 데이터 시트
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ECAD Model:
추가 정보:: SI8808DB-T2-E1 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

장착 스타일: SMD/SMT

상표명: 마이크로 풋

패키지 케이스: 4-UFBGA

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 4-Microfoot

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 500mW

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 330pF @ 15V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: -

Rds-On-Max-Id-Vgs: 95 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 900mV @ 250μA

Gate-Charge-Qg-Vgs: 10nC @ 8V

Pd 전력 손실: 900 mW

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

Vgs 게이트 소스 전압: 8 V

Id-연속-드레인-전류: 2.5 A

Vds-드레인-소스-고장-전압: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 0.9 V

Rds-On-Drain-Source-Resistance: 95 mOhms

트랜지스터 극성: N-채널

Qg-Gate-Charge: 3.7 nC

순방향 트랜스컨덕턴스-최소: 10 S

Tags: SI880, Si88, SI8

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8808DB-T2-E1 설명

***ical: Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R

***et: N-CHANNEL 30 V (D-S) MOSFET

***: N-CHANNEL 8-V (D-S) MOSFET

***i-Key: MOSFET N-CH 30V MICROFOOT

***ark: Transistor Polarity:n Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.071Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:900Mv; Power Dissipation Pd:900Mw; No. Of Pins:4Pins Rohs Compliant: No

SI8808DB-T2-E1 추가 정보

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Market price

부분 #	제조	설명	재고	가격
SI8808DB-T2-E1 DISTI # V72:2272_09216536	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot RoHS: Compliant	5955	3000:$0.1448 1000:$0.1577 500:$0.2033 250:$0.2384 100:$0.2480 25:$0.3001 10:$0.3335 1:$0.4370
SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1CT-ND	Vishay Siliconix	MOSFET N-CH 30V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	22093In Stock	1000:$0.1872 500:$0.2423 100:$0.3304 10:$0.4410 1:$0.5200
SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1DKR-ND	Vishay Siliconix	MOSFET N-CH 30V MICROFOOT RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	22093In Stock	1000:$0.1872 500:$0.2423 100:$0.3304 10:$0.4410 1:$0.5200
SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1TR-ND	Vishay Siliconix	MOSFET N-CH 30V MICROFOOT RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	21000In Stock	3000:$0.1657
SI8808DB-T2-E1 DISTI # 25790129	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot RoHS: Compliant	5955	3000:$0.1448 1000:$0.1577 500:$0.2033 250:$0.2384 100:$0.2480 51:$0.3001
SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8808DB-T2-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 6000	3000:$0.1949 6000:$0.1939 12000:$0.1939 18000:$0.1929 30000:$0.1929
SI8808DB-T2-E1 DISTI # SI8808DB-T2-E1	Vishay Intertechnologies	Trans MOSFET N-CH 30V 2.5A 4-Pin Micro Foot T/R (Alt: SI8808DB-T2-E1) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.2329 6000:€0.1589 12000:€0.1369 18000:€0.1259 30000:€0.1169
SI8808DB-T2-E1. DISTI # 28AC2185	Vishay Intertechnologies	N-CHANNEL 30 V (D-S) MOSFET , ROHS COMPLIANT: NO	6000	1:$0.1620 3000:$0.1620
SI8808DB-T2-E1 DISTI # 78-SI8808DB-T2-E1	Vishay Intertechnologies	MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant	3856	1:$0.4600 10:$0.3510 100:$0.2610 500:$0.2140 1000:$0.1660 3000:$0.1620
SI8808DBT2E1	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI8808DB-T2-E1 DISTI # C1S803602004241	Vishay Intertechnologies	MOSFETs	5955	100:$0.2480 50:$0.2949 25:$0.3277 10:$0.3335
SI8808DB-T2-E1	Vishay Intertechnologies	MOSFET 30V Vds 8V Vgs MICRO FOOT 0.8 x 0.8 RoHS: Compliant	Americas -

SI8808DB-T2-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes