IRF1018EPBF

Mfr. #:: IRF1018EPBF
제조사:: Infineon Technologies
설명:: MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IRF1018EPBF 데이터 시트
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HTML Datasheet:: IRF1018EPBF Datasheet IRF1018EPBF Datasheet (P4-P6)IRF1018EPBF Datasheet (P7-P9)IRF1018EPBF Datasheet (P10-P11)
ECAD Model:
추가 정보:: IRF1018EPBF 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 60 V

Id - 연속 드레인 전류:: 79 A

Rds On - 드레인 소스 저항:: 7.5 mOhms

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 46 nC

Pd - 전력 손실:: 110 W

구성:: 하나의

포장:: 튜브

키:: 15.65 mm

길이:: 10 mm

트랜지스터 유형:: 1 N-Channel

너비:: 4.4 mm

상표:: 인피니언 테크놀로지스

상품 유형:: MOSFET

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

부품 번호 별칭:: SP001574502

단위 무게:: 0.211644 oz

Tags: IRF1018, IRF101, IRF10, IRF1, IRF

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF1018EPBF 설명

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 7.1Milliohms;ID 79A;TO-220AB;PD 110W;-55deg

***ure Electronics: Single N-Channel 60 V 8.4 mOhm 46 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 110 W

*** Stop Electro: Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:79A; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:110W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:79A; Package / Case:TO-220; Power Dissipation Pd:110W; Pulse Current Idm:315A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg

*** Source Electronics: Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 75A TO-220AB

***ure Electronics: Single N-Channel 60 V 8.5 mOhm 86 nC HEXFET® Power Mosfet - TO-220-3

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***roFlash: Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

***ment14 APAC: MOSFET, N, 60V, 84A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):8.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:1.11°C/W; On State resistance @ Vgs = 10V:8.5ohm; Package / Case:TO-220AB; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:340A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***ineon SCT: 60V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS

***ure Electronics: Single N-Channel 60 V 7.3 mOhm 87 nC HEXFET® Power Mosfet - TO-220-3

***ark: TUBE / MOSFET, 60V, 75A, 7.3 mOhm, 58nC, TO-220

***Yang: Trans MOSFET N-CH 60V 75A 3-Pin TO-220AB Tube - Rail/Tube

***et: MOSFET, 60V, 75A, 7.3 MOHM, 58 NC QG, TO-220AB

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 99 W

***ment14 APAC: MOSFET, N CH, 60V, 75A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Source Voltage Vds:60V; On Resistance

***roFlash: Power Field-Effect Transistor, 75A I(D), 60V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ineon: Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.34 Milliohms;ID 80A;TO-220AB;PD 140W;-55de

***ure Electronics: Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-220-3

***klin Elektronik: INFINEON THT MOSFET NFET 75V 80A 9mΩ 175°C TO-220 IRFB3607PBF

***ineon SCT: 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

***Yang: Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB - Rail/Tube

***trelec: MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W

***ineon: Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

***ment14 APAC: MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220AB; Power Dissipation Pd:140W; Pulse Current Idm:310A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***eco: Transistor RFP70N06 N-Channel MOSFET 60 Volt 70 Amp TO-220AB

***ure Electronics: N-Channel 60 V 0.014 Ohm Flange Mount Power Mosfet - TO-220AB

***emi: N-Channel Power MOSFET 60V, 70A, 14mΩ

***r Electronics: Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; Device Marking:RFP70N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***Yang: TO-220AB, SINGLE, N-CH, 60V, 0.013 OHM POWERTRENCH MOSFET - Bulk

***ical: Trans MOSFET N-CH 60V 10.9A 3-Pin(3+Tab) TO-220 Tube

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:62A; On Resistance, Rds(on):13.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220AB ;RoHS Compliant: Yes

***ure Electronics: N-Channel 55 V 0.012 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB

***hard Electronics: Transistor: N-MOSFET; unipolar; 55V; 75A; 200W; TO220; UltraFET®

***emi: N-Channel UltraFET Power MOSFET 55V, 75A, 12mΩ

***Yang: Trans MOSFET N-CH 55V 75A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube

***enic: 55V 75A 12m´Î@10V75A 200W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS

***r Electronics: Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***ment14 APAC: MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:12mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

***rchild Semiconductor: These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75339.

IRF1018EPBF 추가 정보

Designing Power Systems: Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More

Infineon Automatic Opening Systems: Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths and other functions.Learn More

Market price

부분 #	제조	설명	재고	가격
IRF1018EPBF DISTI # IRF1018EPBF-ND	Infineon Technologies AG	MOSFET N-CH 60V 79A TO-220AB RoHS: Compliant Min Qty: 1 Container: Tube	3172In Stock	1000:$0.6153 500:$0.7624 100:$0.9647 10:$1.2040 1:$1.3500
IRF1018EPBF DISTI # 08N6374	Infineon Technologies AG	N CHANNEL MOSFET, 60V, 79A TO-220AB,Transistor Polarity:N Channel,Continuous Drain Current Id:79A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0071ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes	267	1:$1.3100 10:$1.1400 100:$0.9050 500:$0.8160 1000:$0.6730
IRF1018EPBF DISTI # 70017886	Infineon Technologies AG	MOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 7.1 Milliohms,ID 79A,TO-220AB,PD 110W,-55deg RoHS: Compliant	0	1100:$1.6200
IRF1018EPBF DISTI # 942-IRF1018EPBF	Infineon Technologies AG	MOSFET MOSFT 60V 79A 8.4mOhm 46nC Qg RoHS: Compliant	1096	1:$1.1700 10:$0.9980 100:$0.7670 500:$0.6780 1000:$0.5350
IRF1018EPBF DISTI # 6886800	Infineon Technologies AG	MOSFET N-CHANNEL 60V 79A HEXFET TO220AB, PK	1925	5:£0.9480 25:£0.8080 50:£0.7140 100:£0.6180 250:£0.5700
IRF1018EPBF DISTI # TMOSP11692	Infineon Technologies AG	N-CH 60V 79A 8,4mOhm TO220-3 RoHS: Compliant	Stock DE - 0Stock US - 0	2000:$0.4101
IRF1018EPBF DISTI # IRF1018EPBF	Infineon Technologies AG	N-Ch 60V 79A 110W 0,0084R TO220AB RoHS: Compliant	960	10:€0.6055 50:€0.3655 200:€0.3055 500:€0.2940
IRF1018EPBF DISTI # 1602223	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	6238	5:£0.8570 25:£0.7050 100:£0.5920 250:£0.5810 500:£0.5230
IRF1018EPBF DISTI # 1602223	Infineon Technologies AG	MOSFET, N, TO-220 RoHS: Compliant	6193	1:$1.8500 10:$1.5800 100:$1.2200 500:$1.0800 1000:$0.8470

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IRF1018EPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes