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HGTG20N60A4D

HGTG20N60A4D
Mfr. #:
HGTG20N60A4D
제조사:
ON Semiconductor
설명:
IGBT 600V 70A 290W TO247
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
HGTG20N60A4D 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
페어차일드 반도체
제품 카테고리
IGBT - 싱글
시리즈
-
포장
튜브
부분 별칭
HGTG20N60A4D_NL
단위 무게
0.225401 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
TO-247
구성
하나의
파워맥스
290W
역복구-시간-trr
35ns
전류 수집기 Ic-Max
70A
Voltage-Collector-Emitter-Breakdown-Max
600V
IGBT형
-
전류 수집기 펄스 Icm
280A
Vce-on-Max-Vge-Ic
2.7V @ 15V, 20A
스위칭 에너지
105μJ (on), 150μJ (off)
게이트 차지
142nC
Td-on-off-25°C
15ns/73ns
시험조건
390V, 20A, 3 Ohm, 15V
Pd 전력 손실
290 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
컬렉터-이미터-전압-VCEO-최대
600 V
컬렉터-이미터-포화-전압
1.8 V
연속 수집기 전류 at-25-C
70 A
게이트 이미 터 누설 전류
+/- 250 nA
최대 게이트 이미 터 전압
+/- 20 V
연속 수집기 전류 Ic-Max
70 A
Tags
HGTG20N60A4D, HGTG20N60A, HGTG20N6, HGTG20, HGTG2, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail
***inecomponents.com
600V, SMPS SERIES NCH IGBT W/ ANTI-PARALLEL HYPERFAST DIODE
***ure Electronics
HGTG20N60A4 Series 600 V 70 A Flange Mount SMPS N-Channel IGBT-TO-247
***et
PWR IGBT 45A,600V,SMPS N-CH W/DIODE TO-247
***Components
TRANSISTOR IGBT N-CH 600V 70A TO247
***ark
Pt P To247 45A 600V Smps Rohs Compliant: Yes
***i-Key
IGBT N-CH SMPS 600V 70A TO247
***eco
ADDED FOR DPP(INTERSIL) PKG ID CHANGE<AZ
***Semiconductor
600V, SMPS IGBT
***nell
IGBT, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:70A; Voltage, Vce Sat Max:2.7V; Power Dissipation:290W; Case Style:TO-247; Termination Type:Through Hole; Operating Temperature Range:-55°C to +150°C; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:280A; Device Marking:HGTG20N60A4D; No. of Pins:3; Power, Pd:290W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:32ns; Time, Fall Typ:32ns; Time, Rise:12ns; Transistors, No. of:1
***rchild Semiconductor
The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. The diode used in anti-parallel is the development type TA49372.This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies.
***ment14 APAC
IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:290W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Current Temperature:25°C; Device Marking:HGTG20N60A4D; Fall Time Typ:32ns; Fall Time tf:32ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:290W; Power Dissipation Pd:290W; Power Dissipation Pd:290W; Pulsed Current Icm:280A; Rise Time:12ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
부분 # 제조 설명 재고 가격
HGTG20N60A4D
DISTI # V36:1790_06359605		ON SemiconductorPT P TO247 45A 600V SMPS1362
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 1:$4.3540
HGTG20N60A4D
DISTI # V99:2348_06359605		ON SemiconductorPT P TO247 45A 600V SMPS450
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 1:$4.3540
HGTG20N60A4D
DISTI # HGTG20N60A4DFS-ND		ON SemiconductorIGBT 600V 70A 290W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		337In Stock
  • 1350:$2.9565
  • 900:$3.4739
  • 450:$3.8520
  • 10:$4.9070
  • 1:$5.4400
HGTG20N60A4D
DISTI # 31882442		ON SemiconductorPT P TO247 45A 600V SMPS5215
  • 4500:$1.8144
  • 450:$1.9104
HGTG20N60A4D
DISTI # 31600626		ON SemiconductorPT P TO247 45A 600V SMPS1362
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 4:$4.3540
HGTG20N60A4D
DISTI # 31262149		ON SemiconductorPT P TO247 45A 600V SMPS450
  • 500:$2.4080
  • 250:$2.8710
  • 100:$3.3210
  • 50:$3.6400
  • 25:$3.7750
  • 10:$3.7820
  • 3:$4.3540
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 9000
  • 450:$1.9900
  • 900:$1.9900
  • 1800:$1.9900
  • 2700:$1.9900
  • 4500:$1.8900
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 450		Asia - 0
  • 450:$3.1792
  • 900:$3.0569
  • 1350:$2.9437
  • 2250:$2.8386
  • 4500:$2.7407
  • 11250:$2.6493
  • 22500:$2.6059
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG20N60A4D)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€2.4900
  • 10:€2.2900
  • 25:€2.1900
  • 50:€2.0900
  • 100:€1.9900
  • 500:€1.8900
  • 1000:€1.7900
HGTG20N60A4D
DISTI # 95B2568		ON SemiconductorTrans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 95B2568)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$5.1800
  • 10:$4.4300
  • 25:$4.2400
  • 50:$4.0500
  • 100:$3.8600
  • 250:$3.6700
HGTG20N60A4D
DISTI # 95B2568		ON SemiconductorSINGLE IGBT, 600V, 70A,DC Collector Current:70A,Collector Emitter Saturation Voltage Vce(on):1.8V,Power Dissipation Pd:290W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes397
  • 250:$3.5400
  • 100:$3.7200
  • 50:$3.9000
  • 25:$4.0900
  • 10:$4.2700
  • 1:$4.9900
HGTG20N60A4D
DISTI # 25M9637		ON SemiconductorIGBT Single Transistor, General Purpose, 70 A, 2.7 V, 290 W, 600 V, TO-247, 3 RoHS Compliant: Yes2606
  • 500:$3.0300
  • 250:$3.3800
  • 100:$3.5600
  • 50:$3.7400
  • 25:$3.9300
  • 10:$4.1100
  • 1:$4.8300
HGTG20N60A4D
DISTI # 512-HGTG20N60A4D		ON SemiconductorIGBT Transistors 600V
RoHS: Compliant		779
  • 1:$4.8300
  • 10:$4.1100
  • 100:$3.5600
  • 250:$3.3800
  • 500:$3.0300
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTransistor: IGBT,600V,40A,190W,TO247-3459
  • 1:$4.0900
  • 5:$3.7900
  • 30:$2.9700
  • 120:$2.5900
HGTG20N60A4D
DISTI # HGTG20N60A4D		ON SemiconductorTransistor: IGBT,600V,40A,190W,TO247-3455
  • 1:$4.0800
  • 5:$3.7900
  • 30:$2.9700
  • 120:$2.5900
HGTG20N60A4DFairchild Semiconductor Corporation 
RoHS: Compliant		Europe - 8
    HGTG20N60A4D
    DISTI # 1057679    		ON SemiconductorIGBT, TO-247
    RoHS: Compliant    		2645
    • 500:$4.9700
    • 250:$5.5400
    • 100:$5.8400
    • 10:$6.7500
    • 1:$7.9300
    HGTG20N60A4D
    DISTI # 1057679    		ON SemiconductorIGBT, TO-247
    RoHS: Compliant    		2631
    • 500:£2.3700
    • 250:£2.6300
    • 100:£2.7700
    • 10:£3.2000
    • 1:£4.1900
    HGTG20N60A4D
    DISTI # XSFP00000149449    		Fairchild Semiconductor Corporation 
    RoHS: Compliant    		390 in Stock0 on Order
    • 390:$4.4500
    • 60:$4.9000
    영상 부분 # 설명
    HGTG20N60A4D

    Mfr.#: HGTG20N60A4D

    OMO.#: OMO-HGTG20N60A4D

    		 IGBT Transistors 600V
    HGTG20N60B3D

    Mfr.#: HGTG20N60B3D

    OMO.#: OMO-HGTG20N60B3D-ON-SEMICONDUCTOR

    		 IGBT 600V 40A 165W TO247
    HGTG20N100D2

    Mfr.#: HGTG20N100D2

    OMO.#: OMO-HGTG20N100D2-1190

    		 Insulated Gate Bipolar Transistor, 34A I(C), 1000V V(BR)CES, N-Channel, TO-247
    HGTG20N120E2

    Mfr.#: HGTG20N120E2

    OMO.#: OMO-HGTG20N120E2-1190

    		 Insulated Gate Bipolar Transistor, 34A I(C), 1200V V(BR)CES, N-Channel, TO-247
    HGTG20N50C1D

    Mfr.#: HGTG20N50C1D

    OMO.#: OMO-HGTG20N50C1D-1190

    		 Insulated Gate Bipolar Transistor, 26A I(C), 500V V(BR)CES, N-Channel, TO-247
    HGTG20N60

    Mfr.#: HGTG20N60

    OMO.#: OMO-HGTG20N60-1190

    		 신규 및 오리지널
    HGTG20N60B3DJ5

    Mfr.#: HGTG20N60B3DJ5

    OMO.#: OMO-HGTG20N60B3DJ5-1190

    		 신규 및 오리지널
    HGTG20N60C3D

    Mfr.#: HGTG20N60C3D

    OMO.#: OMO-HGTG20N60C3D-ON-SEMICONDUCTOR

    		 IGBT 600V 45A 164W TO247
    HGTG20N60C3DR

    Mfr.#: HGTG20N60C3DR

    OMO.#: OMO-HGTG20N60C3DR-1190

    		 신규 및 오리지널
    HGTG20N60A4 20N60A4

    Mfr.#: HGTG20N60A4 20N60A4

    OMO.#: OMO-HGTG20N60A4-20N60A4-1190

    		 신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    4000
    수량 입력:
    HGTG20N60A4D의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.20
    US$2.20
    10
    US$2.09
    US$20.88
    100
    US$1.98
    US$197.83
    500
    US$1.87
    US$934.20
    1000
    US$1.76
    US$1 758.50
    시작
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