SIA430DJ-T1-GE3

Mfr. #:: SIA430DJ-T1-GE3
제조사:: Vishay
설명:: MOSFET N-CH 20V 12A SC70-6
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIA430DJ-T1-GE3 데이터 시트
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HTML Datasheet:: SIA430DJ-T1-GE3 Datasheet SIA430DJ-T1-GE3 Datasheet (P4-P6)SIA430DJ-T1-GE3 Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 단일

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

부분 별칭: SIA430DJ-GE3

장착 스타일: SMD/SMT

패키지 케이스: PowerPAKR SC-70-6

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: PowerPAKR SC-70-6 Single

구성: 단일 쿼드 드레인 듀얼 소스

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 19.2W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 20V

입력-커패시턴스-Ciss-Vds: 800pF @ 10V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 12A (Tc)

Rds-On-Max-Id-Vgs: 13.5 mOhm @ 7A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Charge-Qg-Vgs: 18nC @ 10V

Pd 전력 손실: 3.5 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 10 ns 8 ns

상승 시간: 10 ns 8 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 12 A

Vds-드레인-소스-고장-전압: 20 V

Rds-On-Drain-Source-Resistance: 13.5 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 15 ns 17 ns

일반 켜기 지연 시간: 16 ns 10 ns

채널 모드: 상승

Tags: SIA430DJ-T1, SIA430DJ-T, SIA430, SIA43, SIA4, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA430DJ-T1-GE3 설명

***ure Electronics: Single N-Channel 20 V 0.0135 Ohm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L

***ical: Trans MOSFET N-CH 20V 12A 6-Pin PowerPAK SC-70 T/R

***ronik: N-CHANNEL-FET 12A 20V PP-SC70-6 RoHSconf

***ment14 APAC: N CHANNEL MOSFET, 20V, 12A, SC-70; Trans; N CHANNEL MOSFET, 20V, 12A, SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.5mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:6

Market price

부분 #	제조	설명	재고	가격
SIA430DJ-T1-GE3 DISTI # 21308554	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	2028	155:$0.1812
SIA430DJ-T1-GE3 DISTI # SIA430DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call	3000:$0.4466
SIA430DJ-T1-GE3 DISTI # SIA430DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
SIA430DJ-T1-GE3 DISTI # SIA430DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 12A SC70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
SIA430DJ-T1-GE3 DISTI # C1S803601470872	Vishay Intertechnologies	MOSFETs RoHS: Compliant	80	25:$0.6874 10:$0.6897
SIA430DJ-T1-GE3 DISTI # SIA430DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 12A 6-Pin PowerPAK SC-70 T/R (Alt: SIA430DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SIA430DJ-T1-GE3 DISTI # 16P3618	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 12A, SC-70,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:20V,On Resistance Rds(on):18.5mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V,Product Range:- , RoHS Compliant: Yes	2028	1:$0.3230 25:$0.3230 50:$0.3230 100:$0.3230 250:$0.3230 500:$0.3230 1000:$0.3230
SIA430DJ-T1-GE3. DISTI # 28AC2097	Vishay Intertechnologies	N-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0
SIA430DJ-T1-GE3 DISTI # 781-SIA430DJ-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant	27	1:$1.0200 10:$0.8360 100:$0.6410 500:$0.5520 1000:$0.4840
SIA430DJ-T1-GE3	Vishay Intertechnologies	MOSFET 20V Vds 20V Vgs PowerPAK SC-70 RoHS: Compliant	Americas - 3000

관련 상품

영상	부분 #	설명
	Mfr.#: SIA430DJT-T1-GE3 OMO.#: OMO-SIA430DJT-T1-GE3	MOSFET 20V Vds 20V Vgs Thin PowerPAK SC-70
	Mfr.#: SIA430DJT-T4-GE3 OMO.#: OMO-SIA430DJT-T4-GE3	MOSFET 20V Vds 20V Vgs PowerPAK SC-70
	Mfr.#: SIA430DJ-T1-GE3-CUT TAPE OMO.#: OMO-SIA430DJ-T1-GE3-CUT-TAPE-1190	신규 및 오리지널
	Mfr.#: SIA430DJ OMO.#: OMO-SIA430DJ-1190	신규 및 오리지널
	Mfr.#: SIA430DJ-T1-GE3 OMO.#: OMO-SIA430DJ-T1-GE3-VISHAY	MOSFET N-CH 20V 12A SC70-6
	Mfr.#: SIA430DJ-T1-GE3-CUTTAPE OMO.#: OMO-SIA430DJ-T1-GE3-CUTTAPE-1190	신규 및 오리지널
	Mfr.#: SIA430DJ-T4-GE3 OMO.#: OMO-SIA430DJ-T4-GE3-VISHAY	MOSFET N-CH 20V SC-70-6
	Mfr.#: SIA430DJT-T1-GE3 OMO.#: OMO-SIA430DJT-T1-GE3-VISHAY	MOSFET N-CH 20V 12A SC70-6
	Mfr.#: SIA430DJT-T4-GE3 OMO.#: OMO-SIA430DJT-T4-GE3-VISHAY	MOSFET N-CH 20V 12A SC-70-6