SI4932DY-T1-GE3

Name: Vishay - SI4932DY-T1-GE3
Brand: Vishay
SKU: OMO-2921118
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI4932DY-T1-GE3
제조사:: Vishay
설명:: RF Bipolar Transistors MOSFET 30V 8.0A 3.2W 15mohm @ 10V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4932DY-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: SI4932DY-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: 테이프 및 릴(TR)

부분 별칭: SI4932DY-GE3

단위 무게: 0.006596 oz

장착 스타일: SMD/SMT

패키지 케이스: 8-SOIC (0.154", 3.90mm Width)

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: 8-SO

구성: 듀얼 듀얼 드레인

FET형: 2 N-Channel (Dual)

파워맥스: 3.2W

트랜지스터형: 2 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 1750pF @ 15V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 8A

Rds-On-Max-Id-Vgs: 15 mOhm @ 7A, 10V

Vgs-th-Max-Id: 2.5V @ 250μA

Gate-Charge-Qg-Vgs: 48nC @ 10V

Pd 전력 손실: 2 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 8 ns

상승 시간: 10 ns

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 8 A

Vds-드레인-소스-고장-전압: 30 V

Rds-On-Drain-Source-Resistance: 15 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 26 ns

일반 켜기 지연 시간: 21 ns

채널 모드: 상승

Tags: SI493, SI49, SI4

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4932DY-T1-GE3 설명

***ure Electronics: Si4932DY Series Dual N-Channel 30 V 15 mOhms Surface Mount Power Mosfet-SOIC-8

***et: Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R

***ark: DUAL N-CHANNEL 30-V (D-S) MOSFET

SI4932DY-T1-GE3 추가 정보

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.6237
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4932DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5889 5000:$0.5719 10000:$0.5479 15000:$0.5329 25000:$0.5189
SI4932DY-T1-GE3 DISTI # SI4932DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin SOIC N T/R (Alt: SI4932DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.6412 5000:$0.4933 7500:$0.3926 12500:$0.3317 25000:$0.3054 62500:$0.2960 125000:$0.2871
SI4932DY-T1-GE3 DISTI # 781-SI4932DY-GE3	Vishay Intertechnologies	MOSFET 30V 8.0A 3.2W 15mohm @ 10V RoHS: Compliant	0	1:$1.4200 10:$1.1700 100:$0.8960 500:$0.7700 1000:$0.6760 2500:$0.6750
SI4932DY-T1-GE3	Vishay Intertechnologies	MOSFET 30V 8.0A 3.2W 15mohm @ 10V RoHS: Compliant	Americas -

SI4932DY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes