SISH101DN-T1-GE3

Mfr. #:: SISH101DN-T1-GE3
제조사:: Vishay / Siliconix
설명:: MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SISH101DN-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SISH101DN-T1-GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: PowerPAK-1212-8SH-8

채널 수:: 1 Channel

트랜지스터 극성:: P-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: - 35 A

Rds On - 드레인 소스 저항:: 7.2 mOhms

Vgs th - 게이트 소스 임계 전압:: - 1.2 V

Vgs - 게이트 소스 전압:: 25 V

Qg - 게이트 차지:: 102 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 52 W

구성:: 하나의

채널 모드:: 상승

상표명:: 트렌치펫; 파워팩

포장:: 릴

트랜지스터 유형:: 1 P-Channel

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 44 S

가을 시간:: 8 ns

상품 유형:: MOSFET

상승 시간:: 10 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 38 ns

일반적인 켜기 지연 시간:: 12 ns

Tags: SISH10, SISH1, SISH, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISH101DN-T1-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

부분 #	제조	설명	재고	가격
SISH101DN-T1-GE3 DISTI # V72:2272_22989541	Vishay Intertechnologies	SISH101DN-T1-GE3	6000	75000:$0.2594 30000:$0.2632 15000:$0.2670 6000:$0.2708 3000:$0.2746 1000:$0.2784 500:$0.2945 250:$0.3274 100:$0.3638 50:$0.4042 25:$0.4491 10:$0.6712 1:$0.7472
SISH101DN-T1-GE3 DISTI # SISH101DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6050In Stock	1000:$0.3374 500:$0.4218 100:$0.5336 10:$0.6960 1:$0.7900
SISH101DN-T1-GE3 DISTI # SISH101DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6050In Stock	1000:$0.3374 500:$0.4218 100:$0.5336 10:$0.6960 1:$0.7900
SISH101DN-T1-GE3 DISTI # SISH101DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V POWERPAK 1212 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	6000In Stock	30000:$0.2594 15000:$0.2662 6000:$0.2764 3000:$0.2969
SISH101DN-T1-GE3 DISTI # 33159146	Vishay Intertechnologies	SISH101DN-T1-GE3	6000	30000:$0.2632 15000:$0.2670 6000:$0.2708 3000:$0.2746 1000:$0.2784 500:$0.2945 250:$0.3274 100:$0.3638 50:$0.4042 26:$0.4491
SISH101DN-T1-GE3 DISTI # SISH101DN-T1-GE3	Vishay Intertechnologies	Transistor MOSFET P-CH 30V 35A 8-Pin PowerPAK 1212 T/R (Alt: SISH101DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.2679 18000:€0.2879 12000:€0.3109 6000:€0.3619 3000:€0.5309
SISH101DN-T1-GE3 DISTI # SISH101DN-T1-GE3	Vishay Intertechnologies	Transistor MOSFET P-CH 30V 35A 8-Pin PowerPAK 1212 T/R (Alt: SISH101DN-T1-GE3) RoHS: Compliant Min Qty: 6000 Container: Tape and Reel	Asia - 0
SISH101DN-T1-GE3 DISTI # 99AC2828	Vishay Intertechnologies	MOSFET, P-CH, -30V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0058ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.5V,RoHS Compliant: Yes	55	1000:$0.3150 500:$0.3940 250:$0.4350 100:$0.4770 50:$0.5280 25:$0.5780 10:$0.6290 1:$0.7780
SISH101DN-T1-GE3 DISTI # 78-SISH101DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds,+/-25V Vgs PowerPAK 1212-8SH RoHS: Compliant	6037	1:$0.7700 10:$0.6230 100:$0.4720 500:$0.3900 1000:$0.3120 3000:$0.2830 6000:$0.2640 9000:$0.2540 24000:$0.2440
SISH101DN-T1-GE3 DISTI # 3019124	Vishay Intertechnologies	MOSFET, P-CH, -30V, -35A, 150DEG C, 52W RoHS: Compliant	55	1000:$0.3620 500:$0.4580 250:$0.5100 100:$0.5630 25:$0.7570 5:$0.8290
SISH101DN-T1-GE3 DISTI # 3019124	Vishay Intertechnologies	MOSFET, P-CH, -30V, -35A, 150DEG C, 52W	50	500:£0.2830 250:£0.3130 100:£0.3420 10:£0.4980 1:£0.6380

관련 상품

영상	부분 #	설명
	Mfr.#: NCP51530BDR2G OMO.#: OMO-NCP51530BDR2G	Gate Drivers 700V HALF BRIDGE DRIVER
	Mfr.#: STUSB4710AQTR OMO.#: OMO-STUSB4710AQTR	USB Interface IC CONDITIONING & INTERFACES
	Mfr.#: FDMS86200DC OMO.#: OMO-FDMS86200DC	MOSFET 150V/20V N Channel PowerTrench MOSFET
	Mfr.#: FODM8801AR2V OMO.#: OMO-FODM8801AR2V	Transistor Output Optocouplers 2.03 x 2.5 x 4.4mm 4 Lead Surface Mount
	Mfr.#: UCC28780DR OMO.#: OMO-UCC28780DR	Switching Controllers ACTIVE CLAMP FLYBACK
	Mfr.#: NCP43080DDR2G OMO.#: OMO-NCP43080DDR2G	Switching Controllers SECONDARY SIDE SYNCHRONOU
	Mfr.#: ATL431LIAQDBZR OMO.#: OMO-ATL431LIAQDBZR-TEXAS-INSTRUMENTS	V-Ref Adjustable 2.5V to 36V 15mA 3-Pin SOT-23 T/R
	Mfr.#: CC0805KKX7R9BB105 OMO.#: OMO-CC0805KKX7R9BB105-YAGEO	Multilayer Ceramic Capacitors MLCC - SMD/SMT 1.0uF 50V X7R 10%
	Mfr.#: FODM8801AR2V OMO.#: OMO-FODM8801AR2V-ON-SEMICONDUCTOR	Transistor Output Optocouplers 2.03 x 2.5 x 4.4mm 4 Lead Surface Mount
	Mfr.#: FDMS86200DC OMO.#: OMO-FDMS86200DC-ON-SEMICONDUCTOR	MOSFET N-CH 150V 9.3A POWER 56

유효성

재고:: Available
주문 시:: 1989
수량 입력:

SISH101DN-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.77~~; ~~US$0.77~~

10: ~~US$0.62~~; ~~US$6.23~~

100: ~~US$0.47~~; ~~US$47.20~~

500: ~~US$0.39~~; ~~US$195.00~~

1000: ~~US$0.31~~; ~~US$312.00~~

시작

SISH10 3
SISH1 9
SISH 31
SIS 843

최신 제품

Si8410DB Chipscale N-Channel MOSFET

Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
Compare SISH101DN-T1-GE3

SISH101DNT1GE3 vs SISH106DNT1GE3 vs SISH108DNT1GE3
SiC43x 3 V to 24 V microBUCK®

Vishay’s SiC43x family features minimum external components with two resistors to set soft start, switching frequency, ILIMIT, and operating mode.
SIHJ6N65E, SIHJ7N65E, and SIHJ8N60E E Series MOSFE

Vishay has extended the offering of 600 V and 650 V E series power MOSFETs with three n-channel devices in the compact PowerPAK SO-8L package.
Si7655DN -20 V P-Channel MOSFET

Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
N-Channel 8 V (D-S) MOSFETs

Vishay's TrenchFET® MOSFETs have an industry low on-resistance of 20 mΩ at 4.5 V, used in applications where low on-resistance is more critical than space.

More Newest Products

SISH101DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes