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IRLU8113PBF

IRLU8113PBF
Mfr. #:
IRLU8113PBF
제조사:
Infineon / IR
설명:
MOSFET MOSFT 30V 94A 6mOhm 22nC Qg Log Lvl
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IRLU8113PBF 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU8113PBF DatasheetIRLU8113PBF Datasheet (P4-P6)IRLU8113PBF Datasheet (P7-P9)IRLU8113PBF Datasheet (P10-P12)
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-251-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
94 A
Rds On - 드레인 소스 저항:
7.4 mOhms
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
22 nC
Pd - 전력 손실:
89 W
구성:
하나의
포장:
튜브
키:
6.22 mm
길이:
6.73 mm
트랜지스터 유형:
1 N-Channel
너비:
2.38 mm
상표:
인피니언 / IR
상품 유형:
MOSFET
공장 팩 수량:
75
하위 카테고리:
MOSFET
부품 번호 별칭:
SP001552924
단위 무게:
0.139332 oz
Tags
IRLU8, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
MOSFET, N Ch., 30V, 94A, 6 MOHM, 22 NC QG, I-PAK, Pb-Free
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N, 30V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6mohm; Threshold Voltage Vgs Typ:2.25V; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Package / Case:IPAK; Power Dissipation Pd:89mW; Pulse Current Idm:380A; SMD Marking:89; Termination Type:Through Hole; Transistor Type:Power MOSFET; Turn Off Time:15ns; Turn On Time:9.2ns; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***ser
MOSFETs 30V,116A,5.1OHM,NCH PWR TRENCH MOSFET
***ter Electronics
30V,116A,5.1 OHM, NCH, IPAK, POWER TRENCH MOSFET
***ical
Trans MOSFET N-CH 30V 18A 3-Pin(3+Tab) IPAK Tube
***r Electronics
Power Field-Effect Transistor, 18A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ser
MOSFETs- Power and Small Signal NFET 30V 88A 5MOHM
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:88A; On Resistance, Rds(on):5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
***nell
MOSFET, N, 30V, 3 I-PAK; Transistor Type:Enhancement; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:88A; Resistance, Rds On:0.005ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.5V; Case Style:I-PAK; Termination Type:Through Hole; Power, Pd:66W; Voltage, Vds Max:30V
***i-Key
MOSFET N-CH 30V 90A IPAK
***ser
MOSFETs 30V N-Channel PowerTrench SyncFET
***el Nordic
Contact for details
***inecomponents.com
30V N-Channel PowerTrench MOSFET
***et
30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET
***r Electronics
Power Field-Effect Transistor, 17A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ser
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
***r Electronics
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***or
MOSFET N-CH 30V 11.3A/79A IPAK
***th Star Micro
Not recommended for new design. Use NTD4906N
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes
부분 # 제조 설명 재고 가격
IRLU8113PBF
DISTI # IRLU8113PBF-ND		Infineon Technologies AGMOSFET N-CH 30V 94A I-PAK
RoHS: Compliant
Min Qty: 900
Container: Tube		Limited Supply - Call
    IRLU8113PBF
    DISTI # 70017972    		Infineon Technologies AGMOSFET,N Ch.,30V,94A,6 MOHM,22 NC QG,I-PAK,Pb-Free
    RoHS: Compliant    		0
    • 1:$0.5600
    IRLU8113PBFInternational Rectifier 
    RoHS: Compliant    		1198
      IRLU8113PBF
      DISTI # 1436999      		Infineon Technologies AG 
      RoHS: Compliant      		0
      • 1000:$2.1100
      • 500:$2.2600
      • 250:$2.5500
      • 100:$2.8600
      • 10:$3.5300
      • 1:$4.2900
      영상 부분 # 설명
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      OMO.#: OMO-IRLU8743PBF-INFINEON-TECHNOLOGIES

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      OMO.#: OMO-IRLU8729PBF-126

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      		 IGBT Transistors MOSFET MOSFT 30V 65A 8.5nC 8.4mOhm Qg log lvl
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      유효성
      재고:
      Available
      주문 시:
      2000
      수량 입력:
      IRLU8113PBF의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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