We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IRF8714PBF DISTI # IRF8714PBF-ND | Infineon Technologies AG | MOSFET N-CH 30V 14A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Tube | Limited Supply - Call | |
| IRF8714PBF DISTI # SP001555772 | Infineon Technologies AG | Trans MOSFET N-CH 30V 14A 8-Pin SOIC (Alt: SP001555772) RoHS: Compliant Min Qty: 1 | Europe - 4980 |
|
| IRF8714PBF. DISTI # 26AC0653 | Infineon Technologies AG | TRENCH_MOSFETS ROHS COMPLIANT: YES | 0 | |
| IRF8714PBF DISTI # 70018015 | Infineon Technologies AG | IRF8714PBF N-channel MOSFET Transistor,14 A,30 V,8-Pin SOIC RoHS: Compliant | 0 |
|
| IRF8714PBF DISTI # 942-IRF8714PBF | Infineon Technologies AG | MOSFET 30V 1 N-CH HEXFET 8.7mOhms 8.1nC RoHS: Compliant | 1068 |
|
| IRF8714PBF | Infineon Technologies AG | Power Field-Effect Transistor, 14A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3631 |
|
| IRF8714PBF | International Rectifier | Power Field-Effect Transistor, 14A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| IRF8714PBF | International Rectifier | 14 A, 30 V, 0.0087 ohm, N-CHANNEL, Si, POWER, MOSFET | 75 |
|
| IRF8714PBF DISTI # 495681 | Infineon Technologies AG | MOSFET N-CHANNEL 30V 14A HEXFET SOIC8, PK | 5280 |
|
| IRF8714PBF DISTI # IRF8714PBF | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,14A,2.5W,SO8 | 498 |
|
| IRF8714TRPBF DISTI # IRF8714PBF-GURT | Infineon Technologies AG | N-Ch 30V 14A 2,5W 0,0087R SO8 RoHS: Compliant | 0 |
|
| IRF8714PBF DISTI # 1551901 | Infineon Technologies AG | MOSFET, N SO-8 RoHS: Compliant | 246 |
|
| IRF8714PBF DISTI # 1551901 | Infineon Technologies AG | MOSFET, N SO-8 RoHS: Compliant | 246 |
|
| IRF8714PBF DISTI # XSKDRABS0006761 | Infineon Technologies AG | RoHS: Compliant | 3040 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IRF8301MTRPBF OMO.#: OMO-IRF8301MTRPBF |
MOSFET MOSF N CH 30V 34A DIRECTFET MT |
|
|
Mfr.#: IRF8306MTR1PBF OMO.#: OMO-IRF8306MTR1PBF |
MOSFET MOSFT 30V Gen 3.6mOhm mx 25nC Og |
|
Mfr.#: IRF8252TRPBF-1 |
MOSFET N-CH 25V 25A |
|
Mfr.#: IRF8010 OMO.#: OMO-IRF8010-1190 |
MOSFET Transistor, N-Channel, TO-220AB |
|
|
Mfr.#: IRF8010STRLPBF. OMO.#: OMO-IRF8010STRLPBF--1190 |
Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi |
|
Mfr.#: IRF8113GPBF |
MOSFET N-CH 30V 17.2A 8-SO |
|
|
Mfr.#: IRF831 OMO.#: OMO-IRF831-1190 |
Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
|
Mfr.#: IRF833 OMO.#: OMO-IRF833-1190 |
신규 및 오리지널 |
|
Mfr.#: IRF840STRL OMO.#: OMO-IRF840STRL-VISHAY |
MOSFET N-CH 500V 8A D2PAK |
|
|
Mfr.#: IRF8788 OMO.#: OMO-IRF8788-1190 |
신규 및 오리지널 |