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SEMIX653GB176HDS

SEMIX653GB176HDS
Mfr. #:
SEMIX653GB176HDS
제조사:
SEMIKRON
설명:
IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SEMIX653GB176HDS 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
Tags
SEMIX65, SEMIX6, SEMIX, SEMI, SEM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC
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***ark
IGBT POWER MODULE; Continuous Collector Current:619A; Collector Emitter Saturation Voltage:2.45V; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2V; Product Range:- RoHS Compliant: Yes
***nell
IGBT MODULE, 2X1700V; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1700V; Current Ic Continuous a Max:650A; Voltage, Vce Sat Max:2.45V; Case Style:SEMiX 3s; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1.2V; Current Ic av:650A; Current, Icm Pulsed:900A; Current, Ifs Max:2900A; Time, Rise:90ns; Voltage, Vrrm:1700V
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EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding
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Igbt, Module, N-Ch, 1.2Kv, 150A; Transistor Polarity:n Channel; Dc Collector Current:150A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:790W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***trelec
Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.75 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Configuration = Dual / Channel Type = N-Channel / Power Dissipation (Pd) W = 790 / Continuous Collector Current (Ic) A = 150 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Emitter Leakage Current nA = 100 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tray
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IGBT MODULE, 1200V, ECONOPIM; Continuous Collector Current:105A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Press Fit; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes
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EconoPIM 3 1200V three phase PIM IGBT module with IGBT3 and NTC | Summary of Features: Low stray inductance module design; High reliability and power density; Copper base plate for optimized heat spread; Solderable pins; Low switching losses; High switching frequency; RoHS-compliant modules | Benefits: Compact module concept; Optimized customers development cycle time and cost; Configuration flexibility; Fast, reliable and low cost mounting concept | Target Applications: drives; medical; induction; aircon
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TRANSISTOR, NPN, ISOTOP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 200V; Transition Frequency ft: -; Power Dissipation Pd: 250W; DC Collector Current: 100A; DC Current Gain hFE: 27hFE; Transistor Case Style
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BIPOLAR TRANSISTOR, NPN, 200V; Transistor Polarity:NPN; Collector Emitter Voltage Max:200V; Continuous Collector Current:100A; Power Dissipation:250W; Transistor Mounting:Module; No. of Pins:4Pins; Transition Frequency:-; MSL:- RoHS Compliant: Yes
부분 # 제조 설명 재고 가격
SEMIX653GB176HDS
DISTI # 16M0126		SEMIKRONIGBT POWER MODULE,Transistor Polarity:N Channel,DC Collector Current:619A,Collector Emitter Saturation Voltage Vce(on):2.45V,Power Dissipation Pd:-,Collector Emitter Voltage V(br)ceo:1.2V,No. of Pins:16Pins,Product Range:- RoHS Compliant: Yes0
  • 25:$214.1300
  • 10:$227.8300
  • 5:$231.2600
  • 1:$234.6900
SEMIX653GB176HDS
DISTI # 70098315		SEMIKRONIGBT,1700 V,660 A @ 25 DegC,650 A @ 80 DegC,1.7 V @ 25 degC
RoHS: Compliant		0
  • 1:$346.3000
  • 6:$327.8000
  • 42:$311.1700
  • 96:$296.1400
  • 144:$282.5200
영상 부분 # 설명
SEMIX653GAL176HDS

Mfr.#: SEMIX653GAL176HDS

OMO.#: OMO-SEMIX653GAL176HDS-1190

 IGBT MODULE, SINGLE, 1.7KV, 619A, Transistor Polarity:NPN, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1
SEMIX653GB176HDS

Mfr.#: SEMIX653GB176HDS

OMO.#: OMO-SEMIX653GB176HDS-1190

 IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V,
SEMIX653GD176HDC

Mfr.#: SEMIX653GD176HDC

OMO.#: OMO-SEMIX653GD176HDC-1190

 IGBT, 1700 V, 660 A @ 25 DegC, 650 A @ 80 DegC, 1.7 V @ 25 degC
유효성
재고:
Available
주문 시:
2500
수량 입력:
SEMIX653GB176HDS의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
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내선 가격
1
US$0.00
US$0.00
10
US$0.00
US$0.00
100
US$0.00
US$0.00
500
US$0.00
US$0.00
1000
US$0.00
US$0.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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