CGHV96100F2

Mfr. #:: CGHV96100F2
제조사:: N/A
설명:: RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CGHV96100F2 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: CGHV96100F2 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

트랜지스터 유형:: 헴트

기술:: GaN SiC

포장:: 쟁반

시리즈:: T2G

상표:: 코르보

습기에 민감한:: 네

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 50

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1100007

Tags: CGHV9, CGHV, CGH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CGHV96100F2 설명

***i-Key: FET RF 100V 9.6GHZ 440210

CGHV96100F2 추가 정보

GaN HEMTs: Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

X-Band GaN HEMTs & MMICs: Wolfspeed/Cree X-Band GaN HEMTs & MMICs wide bandgap increases the breakdown field by five times and the power density by a factor of 10 to 20 compared with GaAs-based devices. Cree GaN components are smaller and have a lower capacitance for the same operating power. This means that amplifiers can operate over a wider bandwidth while exhibiting good input and output matching. X-band power amplifiers are moving away from inefficient GaAs pHEMTs and unreliable Traveling Wave Tubes due to the significant advantages of GaN HEMTs and MMICs.Learn More

Market price

부분 #	제조	설명	재고	가격
CGHV96100F2 DISTI # CGHV96100F2-ND	Wolfspeed	RF MOSFET HEMT 40V 440210 RoHS: Compliant Min Qty: 1 Container: Tray	210In Stock	1:$717.5400
CGHV96100F2-TB DISTI # CGHV96100F2-TB-ND	Wolfspeed	TEST FIXTURE FOR CGHV96100F2 RoHS: Compliant Min Qty: 1 Container: Bulk	On Order	1:$550.0000
CGHV96100F2 DISTI # 941-CGHV96100F2	Cree, Inc.	RF JFET Transistors GaN HEMT 7.9-9.6GHz, 100 Watt RoHS: Compliant	98	1:$717.5400
CGHV96100F2-TB DISTI # 941-CGHV96100F2-TB	Cree, Inc.	RF Development Tools Test Board without GaN HEMT RoHS: Compliant	0	1:$550.0000

관련 상품

영상	부분 #	설명
	Mfr.#: MAX5494ETE+ OMO.#: OMO-MAX5494ETE-	Digital Potentiometer ICs 10-Bit Dual NV Linear-Taper
	Mfr.#: HMC952ALP5GE OMO.#: OMO-HMC952ALP5GE	RF Amplifier 9-13.3GHz 2W POWER AMPLIFIER
	Mfr.#: LT6703HVIS5-2#TRMPBF OMO.#: OMO-LT6703HVIS5-2-TRMPBF	Analog Comparators uPower Comparator + 400mV Ref
	Mfr.#: CGB2A1X5R1E105K033BC OMO.#: OMO-CGB2A1X5R1E105K033BC	Multilayer Ceramic Capacitors MLCC - SMD/SMT CGB 0402 25V 1uF X5R 10% T: 0.33mm
	Mfr.#: CRCW04021R00FNED OMO.#: OMO-CRCW04021R00FNED	Thick Film Resistors - SMD 1/16watt 1ohms 1%
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB	RF Development Tools Test Board without GaN HEMT
	Mfr.#: MABC-001000-DP000L OMO.#: OMO-MABC-001000-DP000L-1190	Power Management Modules GaN Bias controller Sequencer Module
	Mfr.#: HMC952ALP5GE OMO.#: OMO-HMC952ALP5GE-ANALOG-DEVICES	RF Amplifier 9-13.3GHz 2W POWER AMPLIFIER
	Mfr.#: 06032C471KAT2A OMO.#: OMO-06032C471KAT2A-AVX	Multilayer Ceramic Capacitors MLCC - SMD/SMT 200volts 470pF 10% X7R
	Mfr.#: CGHV96100F2-TB OMO.#: OMO-CGHV96100F2-TB-WOLFSPEED	TEST FIXTURE FOR CGHV96100F2