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IPB60R600CP

IPB60R600CP
Mfr. #:
IPB60R600CP
제조사:
Rochester Electronics, LLC
설명:
IGBT Transistors MOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB60R600CP 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
인피니언
제품 카테고리
FET - 단일
시리즈
쿨모스 CP
포장
릴
부분 별칭
IPB60R600CPATMA1 SP000405892
단위 무게
0.139332 oz
장착 스타일
SMD/SMT
상표명
쿨모스
패키지 케이스
TO-252-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
60 W
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
17 ns
상승 시간
12 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
6.1 A
Vds-드레인-소스-고장-전압
600 V
Vgs-th-Gate-Source-Threshold-Voltage
3.5 V
Rds-On-Drain-Source-Resistance
600 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
75 ns
일반 켜기 지연 시간
17 ns
Qg-Gate-Charge
21 nC
채널 모드
상승
Tags
IPB60R600C, IPB60R6, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 650V 6.1A 3-Pin TO-263 T/R
***i-Key
MOSFET N-CH 600V 6.1A TO263
***ark
MOSFET, N, TO-263; Transistor Type:Power MOSFET; Transistor Polarity:N; Voltage, Vds Typ:650V; Current, Id Cont:6.1A; On State Resistance:0.6ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-263; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:6.1A; Drain Source Voltage Vds:650V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:60W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:6.1A; Package / Case:TO-263; Power Dissipation Pd:60W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:650V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***nell
MOSFET, N, TO-263; Polarità Transistor:Canale N; Corrente Continua di Drain Id:6.1A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.54ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:60W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Corrente Id Max:6.1A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vds Tipica:650V; Tensione Vgs Max:20V; Tensione Vgs di Misurazione Rds on:10V; Tipo di Terminazione:Dispositivo a Montaggio Superficiale; Tipo di Transistor:Power MOSFET
부분 # 제조 설명 재고 가격
IPB60R600CPATMA1
DISTI # IPB60R600CPATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB60R600CPATMA1
    DISTI # IPB60R600CPATMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IPB60R600CPATMA1
      DISTI # IPB60R600CPATMA1DKR-ND      		Infineon Technologies AGMOSFET N-CH 600V 6.1A TO263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IPB60R600CPInfineon Technologies AGPower Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant        		6970
        • 1000:$0.7100
        • 500:$0.7400
        • 100:$0.7700
        • 25:$0.8100
        • 1:$0.8700
        IPB60R600CP
        DISTI # 726-IPB60R600CP        		Infineon Technologies AGMOSFET N-Ch 600V 6.1A D2PAK-2 CoolMOS CP
        RoHS: Compliant        		874
        • 1:$2.0800
        • 10:$1.6100
        • 100:$1.4600
        • 250:$1.3100
        • 500:$1.1300
        • 1000:$0.9540
        • 2000:$0.7930
        • 5000:$0.7750
        • 10000:$0.7460
        영상 부분 # 설명
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        Mfr.#: IPB60R199CPA

        OMO.#: OMO-IPB60R199CPA

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        Mfr.#: IPB60R190C6 6R190C6

        OMO.#: OMO-IPB60R190C6-6R190C6-1190

        		 신규 및 오리지널
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        Mfr.#: IPB600N25N3 G

        OMO.#: OMO-IPB600N25N3-G-1190

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        Mfr.#: IPB60R125C6ATMA1

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        IPB60R380C6 .

        Mfr.#: IPB60R380C6 .

        OMO.#: OMO-IPB60R380C6--1190

        		 신규 및 오리지널
        IPB60R380C6S

        Mfr.#: IPB60R380C6S

        OMO.#: OMO-IPB60R380C6S-1190

        		 신규 및 오리지널
        유효성
        재고:
        Available
        주문 시:
        3500
        수량 입력:
        IPB60R600CP의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
        참고 가격(USD)
        수량
        단가
        내선 가격
        1
        US$1.06
        US$1.06
        10
        US$1.01
        US$10.12
        100
        US$0.96
        US$95.85
        500
        US$0.91
        US$452.65
        1000
        US$0.85
        US$852.00
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