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STGWA25H120DF2

STGWA25H120DF2
Mfr. #:
STGWA25H120DF2
제조사:
STMicroelectronics
설명:
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGWA25H120DF2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGWA25H120DF2 추가 정보 STGWA25H120DF2 Product Details
제품 속성
속성 값
제조사:
ST마이크로일렉트로닉스
제품 카테고리:
IGBT 트랜지스터
기술:
시
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
2.5 V
최대 게이트 이미터 전압:
20 V
25C에서 연속 수집기 전류:
50 A
Pd - 전력 손실:
375 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
STGWA25H120DF2
상표:
ST마이크로일렉트로닉스
지속적인 수집가 전류:
25 A
게이트-이미터 누설 전류:
250 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
600
하위 카테고리:
IGBT
단위 무게:
0.215171 oz
Tags
STGWA25, STGWA2, STGWA, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 50A 375000mW 3-Pin(3+Tab) TO-247 Tube
***i-Key
IGBT HB 1200V 25A HS TO247-3
***et Europe
IGBT & POWER BIPOLAR
***ark
Ptd High Voltage
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
부분 # 제조 설명 재고 가격
STGWA25H120DF2
DISTI # 30608543		STMicroelectronicsIGBT HB 1200V 25A HS TO247-310
  • 5:$6.0818
STGWA25H120DF2
DISTI # 497-15548-5-ND		STMicroelectronicsIGBT HB 1200V 25A HS TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		34In Stock
  • 510:$5.2405
  • 120:$6.0182
  • 30:$6.9310
  • 10:$7.2690
  • 1:$8.0500
STGWA25H120DF2
DISTI # V36:1790_06560799		STMicroelectronicsIGBT HB 1200V 25A HS TO247-30
    STGWA25H120DF2
    DISTI # STGWA25H120DF2    		STMicroelectronicsIGBT & POWER BIPOLAR - Rail/Tube (Alt: STGWA25H120DF2)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube    		Americas - 0
    • 3000:$4.0900
    • 6000:$4.0900
    • 1800:$4.2900
    • 1200:$4.5900
    • 600:$4.7900
    STGWA25H120DF2
    DISTI # 26Y5795    		STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$4.1900
    • 250:$4.3200
    • 100:$5.1600
    • 50:$5.5400
    • 25:$5.9300
    • 10:$6.5100
    • 1:$7.2500
    STGWA25H120DF2
    DISTI # 511-STGWA25H120DF2    		STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed117
    • 1:$7.6600
    • 10:$6.9200
    • 25:$6.6000
    • 100:$5.7300
    • 250:$5.4700
    • 500:$4.9900
    • 1000:$4.3400
    STGWA25H120DF2STMicroelectronicsInsulated Gate Bipolar Transistor
    RoHS: Compliant    		600
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      유효성
      재고:
      733
      주문 시:
      2716
      수량 입력:
      STGWA25H120DF2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$7.66
      US$7.66
      10
      US$6.92
      US$69.20
      25
      US$6.60
      US$165.00
      100
      US$5.73
      US$573.00
      250
      US$5.47
      US$1 367.50
      500
      US$4.99
      US$2 495.00
      1000
      US$4.34
      US$4 340.00
      2500
      US$4.18
      US$10 450.00
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