STGW25H120DF2

STGW25H120DF2
Mfr. #:
STGW25H120DF2
제조사:
STMicroelectronics
설명:
IGBT Transistors IGBT & Power Bipola
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
STGW25H120DF2 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
STGW25H120DF2 추가 정보 STGW25H120DF2 Product Details
제품 속성
속성 값
제조사
ST마이크로일렉트로닉스
제품 카테고리
IGBT - 싱글
시리즈
900-1300V IGBTs
포장
튜브
단위 무게
1.340411 oz
장착 스타일
구멍을 통해
패키지 케이스
TO-247-3
입력 유형
기준
장착형
구멍을 통해
공급자-장치-패키지
TO-247
구성
하나의
파워맥스
375W
역복구-시간-trr
303ns
전류 수집기 Ic-Max
50A
Voltage-Collector-Emitter-Breakdown-Max
1200V
IGBT형
트렌치 필드 스톱
전류 수집기 펄스 Icm
100A
Vce-on-Max-Vge-Ic
2.6V @ 15V, 25A
스위칭 에너지
600μJ (on), 700μJ (off)
게이트 차지
100nC
Td-on-off-25°C
29ns/130ns
시험조건
600V, 25A, 10 Ohm, 15V
Pd 전력 손실
375 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
컬렉터-이미터-전압-VCEO-최대
1200 V
컬렉터-이미터-포화-전압
2.1 V
연속 수집기 전류 at-25-C
50 A
게이트 이미 터 누설 전류
250 nA
최대 게이트 이미 터 전압
20 V
연속 수집기 전류 Ic-Max
25 A
Tags
STGW25H, STGW25, STGW2, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
IGBT H Series
STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (Vce(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
부분 # 제조 설명 재고 가격
STGW25H120DF2
DISTI # V36:1790_06560738
STMicroelectronicsTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
0
    STGW25H120DF2
    DISTI # 497-14714-5-ND
    STMicroelectronicsIGBT H-SERIES 1200V 25A TO-247
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    On Order
    • 510:$5.3708
    • 120:$6.1677
    • 30:$7.1033
    • 10:$7.4500
    • 1:$8.2500
    STGW25H120DF2
    DISTI # STGW25H120DF2
    STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube (Alt: STGW25H120DF2)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    Europe - 0
    • 1000:€3.6900
    • 500:€3.9900
    • 100:€4.1900
    • 50:€4.2900
    • 25:€4.4900
    • 10:€4.6900
    • 1:€5.0900
    STGW25H120DF2
    DISTI # STGW25H120DF2
    STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube (Alt: STGW25H120DF2)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Asia - 0
    • 30000:$2.4513
    • 15000:$2.5176
    • 6000:$2.5875
    • 3000:$2.7000
    • 1800:$2.8227
    • 1200:$2.9571
    • 600:$3.1050
    STGW25H120DF2
    DISTI # STGW25H120DF2
    STMicroelectronicsTrans IGBT Chip N-CH 1200V 50A 3-Pin TO-247 Tube - Rail/Tube (Alt: STGW25H120DF2)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 6000:$4.1900
    • 3000:$4.2900
    • 1800:$4.4900
    • 1200:$4.6900
    • 600:$4.8900
    STGW25H120DF2
    DISTI # 26Y5814
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$4.2900
    • 250:$4.4300
    • 100:$5.2800
    • 50:$5.6800
    • 25:$6.0800
    • 10:$6.6700
    • 1:$7.4300
    STGW25H120DF2
    DISTI # 511-STGW25H120DF2
    STMicroelectronicsIGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
    RoHS: Compliant
    0
    • 1:$7.8500
    • 10:$7.0900
    • 25:$6.7600
    • 100:$5.8700
    • 250:$5.6100
    • 500:$5.1100
    • 1000:$4.4500
    STGW25H120DF2
    DISTI # IGBT1460
    STMicroelectronicsIGBT 1200V 50A 2,1VTO247-3Stock DE - 0Stock HK - 0Stock US - 0
    • 600:$4.8200
    STGW25H120DF2
    DISTI # STGW25H120DF2
    STMicroelectronics1200V 50A 375W TO247
    RoHS: Not Compliant
    0
    • 5:€5.2000
    • 30:€4.6000
    • 120:€4.3000
    • 300:€4.1500
    영상 부분 # 설명
    STGW25M120DF3

    Mfr.#: STGW25M120DF3

    OMO.#: OMO-STGW25M120DF3

    IGBT Transistors Trench gate field-stop IGBT, M series 1200 V, 25 A low loss
    STGW25H120F2

    Mfr.#: STGW25H120F2

    OMO.#: OMO-STGW25H120F2

    IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
    STGW25H120DF2

    Mfr.#: STGW25H120DF2

    OMO.#: OMO-STGW25H120DF2

    IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
    STGW25S120DF3

    Mfr.#: STGW25S120DF3

    OMO.#: OMO-STGW25S120DF3

    IGBT Transistors IGBT & Power Bipolar
    STGW25M120DF3

    Mfr.#: STGW25M120DF3

    OMO.#: OMO-STGW25M120DF3-STMICROELECTRONICS

    IGBT 1200V 50A 375W
    STGW25H120DF2

    Mfr.#: STGW25H120DF2

    OMO.#: OMO-STGW25H120DF2-STMICROELECTRONICS

    IGBT Transistors IGBT & Power Bipola
    STGW25H120F2

    Mfr.#: STGW25H120F2

    OMO.#: OMO-STGW25H120F2-STMICROELECTRONICS

    IGBT H-SERIES 1200V 25A TO-247
    STGW25H120DF

    Mfr.#: STGW25H120DF

    OMO.#: OMO-STGW25H120DF-1190

    신규 및 오리지널
    STGW25H120F

    Mfr.#: STGW25H120F

    OMO.#: OMO-STGW25H120F-1190

    신규 및 오리지널
    STGW25N120DF2

    Mfr.#: STGW25N120DF2

    OMO.#: OMO-STGW25N120DF2-1190

    신규 및 오리지널
    유효성
    재고:
    Available
    주문 시:
    2000
    수량 입력:
    STGW25H120DF2의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$3.68
    US$3.68
    10
    US$3.49
    US$34.93
    100
    US$3.31
    US$330.93
    500
    US$3.13
    US$1 562.70
    1000
    US$2.94
    US$2 941.60
    시작
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