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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| NE3512S02-A DISTI # C1S620200378815 | Renesas Electronics Corporation | Trans JFET N-CH 4V 70mA HJFET 4-Pin Case S-02 RoHS: Compliant | 8 |
|
| NE3512S02-A DISTI # NE3512S02-A-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 90 Container: Bulk | Limited Supply - Call | |
| NE3512S02-T1C-A DISTI # NE3512S02-T1C-ATR-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| NE3512S02-T1C-A DISTI # NE3512S02-T1C-ACT-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| NE3512S02-T1C-A DISTI # NE3512S02-T1C-ADKR-ND | California Eastern Laboratories (CEL) | HJ-FET NCH 13.5DB S02 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| NE3512S02-T1D-A DISTI # NE3512S02-T1D-A | Renesas Electronics Corporation | - Bulk (Alt: NE3512S02-T1D-A) Min Qty: 556 Container: Bulk | Americas - 0 |
|
| NE3512S02-T1D-A DISTI # 551-NE3512S02-T1D-A | California Eastern Laboratories (CEL) | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET RoHS: Compliant | 0 | |
| NE3512S02-A DISTI # 551-NE3512S02-A | California Eastern Laboratories (CEL) | RF JFET Transistors C to Ku Band Super Low Noise Amp N-Ch RoHS: Compliant | 0 | |
| NE3512S02-T1C-A DISTI # 551-NE3512S02-T1C-A | California Eastern Laboratories (CEL) | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET RoHS: Compliant | 0 | |
| NE3512S02-T1C-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 6000 |
|
| NE3512S02-T1D-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 20000 |
|
| NE3512S02-A DISTI # NE3512S02-A | Renesas Electronics Corporation | RF SMALL SIGNAL TRANSISTOR HFET | 0 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: NE3503M04-T2-A OMO.#: OMO-NE3503M04-T2-A-CEL |
신규 및 오리지널 |
|
Mfr.#: NE3515S02-A OMO.#: OMO-NE3515S02-A-CEL |
RF JFET Transistors X to Ku-BAND SUPER LOW NOISE AMP N-CH |
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|
Mfr.#: NE3515S02-T1C-A OMO.#: OMO-NE3515S02-T1C-A-CEL |
RF JFET Transistors Super Low Noise Pseudomorphic |
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Mfr.#: NE3512S02-T1C-A OMO.#: OMO-NE3512S02-T1C-A-CEL |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
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Mfr.#: NE3503M04 OMO.#: OMO-NE3503M04-1190 |
신규 및 오리지널 |
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Mfr.#: NE3505M04-T2 , EM-0711 |
신규 및 오리지널 |
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Mfr.#: NE3508M04-T1-A OMO.#: OMO-NE3508M04-T1-A-1190 |
신규 및 오리지널 |
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Mfr.#: NE3508M04T2A OMO.#: OMO-NE3508M04T2A-1190 |
신규 및 오리지널 |
|
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Mfr.#: NE3509M04-EVNF24-A OMO.#: OMO-NE3509M04-EVNF24-A-CEL |
EVAL DEV RF NE3509M04 |
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Mfr.#: NE3510M04 OMO.#: OMO-NE3510M04-1190 |
신규 및 오리지널 |