SIHD6N80E-GE3

Mfr. #:: SIHD6N80E-GE3
제조사:: Vishay / Siliconix
설명:: MOSFET 800V Vds 30V Vgs DPAK (TO-252)
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIHD6N80E-GE3 데이터 시트
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HTML Datasheet:: SIHD6N80E-GE3 Datasheet SIHD6N80E-GE3 Datasheet (P4-P6)SIHD6N80E-GE3 Datasheet (P7)
ECAD Model:
추가 정보:: SIHD6N80E-GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-252-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 800 V

Id - 연속 드레인 전류:: 5.4 A

Rds On - 드레인 소스 저항:: 820 mOhms

Vgs th - 게이트 소스 임계 전압:: 4 V

Vgs - 게이트 소스 전압:: 30 V

Qg - 게이트 차지:: 44 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 78 W

구성:: 하나의

채널 모드:: 상승

포장:: 릴

시리즈:: E

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 2.5 S

가을 시간:: 18 ns

상품 유형:: MOSFET

상승 시간:: 9 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 27 ns

일반적인 켜기 지연 시간:: 13 ns

Tags: SIHD6, SIHD, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHD6N80E-GE3 설명

***et Japan: Transistor MOSFET N-CH 800V 5.4A 3-Pin TO-252

***ical: Trans MOSFET N-CH 800V 5.4A 3-Pin(2+Tab) TO-252AA

***ment14 APAC: MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W

***ark: MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

SIHD6N80E-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

부분 #	제조	설명	재고	가격
SIHD6N80E-GE3 DISTI # V99:2348_21764828	Vishay Intertechnologies	SIHD6N80E-GE3	2940	3000:$0.9135 1000:$0.9791 500:$1.1955 100:$1.3472 10:$1.7678 1:$2.3215
SIHD6N80E-GE3 DISTI # SIHD6N80E-GE3-ND	Vishay Siliconix	MOSFET N-CHAN 800V TO-252 RoHS: Compliant Min Qty: 1 Container: Bulk	2973In Stock	5000:$0.9378 2500:$0.9738 1000:$1.0460 500:$1.2624 100:$1.5365 10:$1.9120 1:$2.1300
SIHD6N80E-GE3 DISTI # 29435235	Vishay Intertechnologies	SIHD6N80E-GE3	2940	3000:$0.9135 1000:$0.9791 500:$1.1955 100:$1.3472 10:$1.7678 8:$2.3215
SIHD6N80E-GE3 DISTI # SIHD6N80E-GE3	Vishay Intertechnologies	E Series Power MOSFET Single N-Channel 800V VDS ±30V 5.4A ID Thin Lead 3-Pin DPAK - Tape and Reel (Alt: SIHD6N80E-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.8799 18000:$0.9049 12000:$0.9299 6000:$0.9699 3000:$0.9999
SIHD6N80E-GE3 DISTI # 59AC7384	Vishay Intertechnologies	N-CHANNEL 800V	0	2500:$0.9000 1000:$1.0100 500:$1.1600 100:$1.2900 50:$1.4500 25:$1.5800 10:$1.7100 1:$2.0900
SIHD6N80E-GE3 DISTI # 78-SIHD6N80E-GE3	Vishay Intertechnologies	MOSFET 800V Vds 30V Vgs DPAK (TO-252) RoHS: Compliant	2706	1:$2.1400 10:$1.7800 100:$1.3800 500:$1.2100 1000:$0.9970
SIHD6N80E-GE3 DISTI # 2932925	Vishay Intertechnologies	MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W RoHS: Compliant	0	1000:$1.5500 500:$1.6400 250:$1.9300 100:$2.3400 10:$2.9900 1:$3.6200
SIHD6N80E-GE3 DISTI # 2932925	Vishay Intertechnologies	MOSFET, N-CH, 800V, 5.4A, 150DEG C, 78W	0	500:£0.8870 250:£0.9470 100:£1.0100 10:£1.3200 1:£1.7800

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	Mfr.#: DN2625K4-G OMO.#: OMO-DN2625K4-G-MICROCHIP-TECHNOLOGY	MOSFET N-CH 250V 1.1A 3DPAK
	Mfr.#: ATSAMV70N19B-AABT OMO.#: OMO-ATSAMV70N19B-AABT-MICROCHIP-TECHNOLOGY	IC MCU 32BIT 512KB FLASH 100LQFP
	Mfr.#: STD18N55M5 OMO.#: OMO-STD18N55M5-STMICROELECTRONICS	Darlington Transistors MOSFET N-Ch 550V 0.18 13A Mdmesh V Power MOS

유효성

재고:: Available
주문 시:: 1985
수량 입력:

SIHD6N80E-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$2.14~~; ~~US$2.14~~

10: ~~US$1.78~~; ~~US$17.80~~

100: ~~US$1.38~~; ~~US$138.00~~

500: ~~US$1.21~~; ~~US$605.00~~

1000: ~~US$1.00~~; ~~US$997.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SIHD6 11
SIHD 46
SIH 797

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SIHD6N80E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes