V8PA12-M3/I

Mfr. #:: V8PA12-M3/I
제조사:: Vishay Semiconductors
설명:: Schottky Diodes & Rectifiers If 8A Vrrm 120V Ifsm 100A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: V8PA12-M3/I 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: V8PA12-M3/I Datasheet V8PA12-M3/I Datasheet (P4-P5)
ECAD Model:
추가 정보:: V8PA12-M3/I 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: 쇼트키 다이오드 및 정류기

RoHS:: Y

제품:: 쇼트키 정류기

장착 스타일:: SMD/SMT

패키지/케이스:: DO-221BC-2

If - 순방향 전류:: 8 A

Vrrm - 반복적인 역전압:: 120 V

Vf - 순방향 전압:: 0.64 V

Ifsm - 순방향 서지 전류:: 100 A

구성:: 하나의

기술:: 시

Ir - 역전류:: 20 mA

최소 작동 온도:: - 40 C

최대 작동 온도:: + 150 C

포장:: 릴

상표:: 비쉐이 반도체

상품 유형:: 쇼트키 다이오드 및 정류기

공장 팩 수량:: 14000

하위 카테고리:: 다이오드 및 정류기

상표명:: eSMP

부품 번호 별칭:: V8PA12HM3/I

단위 무게:: 0.001129 oz

Tags: V8PA12, V8PA1, V8PA, V8P

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

V8PA12-M3/I 설명

***i-Key: DIODE SCHOTTKY 120V 8A DO221BC

***ark: 8A,120V, Smpa Trench Sky Rect.

***et Europe: Rectifiers Schottky

V8PA12-M3/I 추가 정보

eSMP® SMPA Schottky Rectifiers: Vishay Semiconductors eSMP® SMPA Schottky Rectifiers are a patented Trench MOS Barrier Schottky (TMBS®) rectifiers that are available with seven voltage ratings from 45V to 200V and several different package options to serve a wide range of system requirements. TMBS offers several advantages over planar Schottky rectifiers. As operating voltage moves to 45V and above, planar Schottky rectifiers tend to lose their advantage of fast switching speeds and low forward voltage drop to a substantial degree. The patented TMBS structure addresses this issue by diminishing minority carrier injections to the drift region, thus minimizing stored charges and improving switching speeds.

관련 상품

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