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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC091N03MSCGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 35000 |
|
| BSC091N03MSCG | Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant | 15000 |
|
| BSC091N03MSC G DISTI # 726-BSC091N03MSCG | Infineon Technologies AG | MOSFET N-Ch 30V 12A TDSON-8 RoHS: Compliant | 0 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSC0911ND OMO.#: OMO-BSC0911ND |
MOSFET N-Ch 25V 40A TISON-8 |
|
|
Mfr.#: BSC0910NDI OMO.#: OMO-BSC0910NDI |
MOSFET TRANSITIONAL MOSFETS |
|
Mfr.#: BSC0910NDI OMO.#: OMO-BSC0910NDI-1190 |
Trans MOSFET N-CH 25V 11A/22A 8-Pin TISON T/R (Alt: BSC0910NDI) |
|
|
Mfr.#: BSC0911ND OMO.#: OMO-BSC0911ND-1190 |
Trans MOSFET N-CH 25V 18A/30A 8-Pin TISON T/R (Alt: BSC0911ND) |
|
|
Mfr.#: BSC091N03MS OMO.#: OMO-BSC091N03MS-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSC091N03MSC OMO.#: OMO-BSC091N03MSC-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSC091N03MSCG OMO.#: OMO-BSC091N03MSCG-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC091N03MSCGATMA1 OMO.#: OMO-BSC091N03MSCGATMA1-1190 |
Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
Mfr.#: BSC0911NDATMA1 |
MOSFET 2N-CH 25V 18A/30A TISON-8 |
|
|
Mfr.#: BSC0910NDIATMA1 |
MOSFET LV POWER MOS |