3LN01C-TB-E

Mfr. #:: 3LN01C-TB-E
제조사:: ON Semiconductor
설명:: MOSFET NCH 1.5V DRIVE SERIES
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 3LN01C-TB-E 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-23-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 30 V

Id - 연속 드레인 전류:: 150 mA

Rds On - 드레인 소스 저항:: 3.7 Ohms

구성:: 하나의

포장:: 릴

시리즈:: 3LN01C

트랜지스터 유형:: 1 N-Channel

상표:: 온세미컨덕터

상품 유형:: MOSFET

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

단위 무게:: 0.000282 oz

Tags: 3LN01C-TB, 3LN01C-T, 3LN01C, 3LN01, 3LN0, 3LN

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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

3LN01C-TB-E 설명

***(Formerly Allied Electronics): 3LN01C-TB-E N-channel MOSFET Transistor; 0.15 A; 30 V; 3-Pin CP

***emi: Small Signal MOSFET 30V 150mA 3.7 Ohm Single N-Channel CP

***r Electronics: Small Signal Field-Effect Transistor, 0.15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, N CH 30V 0.15A SOT89; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:30V; Cont Current Id:0.15A; On State Resistance:3.7ohm; Voltage Vgs Rds on Measurement:4V; Typ Voltage Vgs th:1.3V; Case Style:CP; Termination Type:SMD; Power Dissipation:0.25W; Transistor Case Style:SOT-89

***(Formerly Allied Electronics): 3LP01C-TB-E P-channel MOSFET Transistor; 0.1 A; 30 V; 3-Pin CP

***emi: Small Signal MOSFET -30V -0.1A 10.4 Ohm Single P-Channel CP

***r Electronics: Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***nell: MOSFET, P CH 30V 0.1A SOT89; Transistor Type:MOSFET; Transistor Polarity:P; Typ Voltage Vds:30V; Cont Current Id:0.1A; On State Resistance:10.4ohm; Voltage Vgs Rds on Measurement:4V; Typ Voltage Vgs th:1.4V; Case Style:CP; Termination Type:SMD; Power Dissipation:0.25W; Transistor Case Style:SOT-89

***emi: Small Signal MOSFET -30V -0.1A 10.4 Ohm Single P-Channel CP

***et: Trans MOSFET P-CH 30V 0.1A 3-Pin CP T/R

***r Electronics: Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***ow.cn: Trans MOSFET N-CH 30V 0.35A 3-Pin SOT-23 T/R

***ure Electronics: N-Channel 30 V 350mA (Ta) 350mW (Ta) Surface Mount SOT-23-3

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***et: MOSFET BVDSS: 25V~30V SOT23 T&R 3K

*** Stop Electro: Small Signal Field-Effect Transistor

***roFlash: Trans Mosfet N-ch 30V 0.35A 3-PIN SOT-23 T/r

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE MOSFET, 30V VDS, 20±V VGS

***et: MOSFET BVDSS: 25V~30V SOT23 T&R 10K

***Yang: Transistor: N-MOSFET, unipolar, 30V, 5A, 29ohm, 1.3W, -55+150 deg.C, SMD, SOT23

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

***ure Electronics: Single N-Channel 30 V 37 mOhm 6.8 nC HEXFET® Power Mosfet - SOT-23

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

***et: Trans MOSFET N-CH 30V 5A 3-Pin SOT-23 T/R

***ark: N CH MOSFET, 30V, 5A, 3-SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800mV; No. of Pins:3 ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***ark: MOSFET Transistor, N Channel, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV

***Yang: Trans MOSFET N-CH 30V 3.4A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

***ure Electronics: Single N-Channel 30 V 80 mOhm 2.9 nC HEXFET® Power Mosfet - SOT-23

*** Source Electronics: MOSFET N-CH 30V 3.4A SOT23 / Trans MOSFET N-CH 30V 3.4A 3-Pin SOT-23 T/R

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

***ineon: Benefits: RoHS Compliant; Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; SOT-23 Footprint | Target Applications: Battery Protection; DC Switches; Load Switch; Load Switch High Side; Load Switch Low Side

***nell: MOSFET,N CH,30V,3.3A,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:4.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3.4A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V

Market price

부분 #	제조	설명	재고	가격
3LN01C-TB-E DISTI # V72:2272_07290039	ON Semiconductor	Trans MOSFET N-CH Si 30V 0.15A 3-Pin CP T/R RoHS: Compliant	55	75000:$0.0683 30000:$0.0700 15000:$0.0777 6000:$0.0864 3000:$0.0916 1000:$0.1017 500:$0.1130 250:$0.1256 100:$0.1835 50:$0.3059 25:$0.3091 10:$0.3123 1:$0.5090
3LN01C-TB-E DISTI # 3LN01C-TB-EOSTR-ND	ON Semiconductor	MOSFET N-CH 30V 150MA 3CP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Limited Supply - Call
3LN01C-TB-E DISTI # 3LN01C-TB-EOSCT-ND	ON Semiconductor	MOSFET N-CH 30V 150MA 3CP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
3LN01C-TB-E DISTI # 3LN01C-TB-EOSDKR-ND	ON Semiconductor	MOSFET N-CH 30V 150MA 3CP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
3LN01C-TB-E DISTI # C1S541900844995	ON Semiconductor	Trans MOSFET N-CH 30V 0.15A 3-Pin CP T/R RoHS: Compliant	55	50:$0.3059 25:$0.3091
3LN01C-TB-E DISTI # 70341717	ON Semiconductor	3LN01C-TB-E N-channel MOSFET Transistor,0.15 A,30 V,3-Pin CP RoHS: Compliant	0	100:$0.0750 250:$0.0710 500:$0.0680 1000:$0.0640
3LN01C-TB-E DISTI # 863-3LN01C-TB-E	ON Semiconductor	MOSFET NCH 1.5V DRIVE SERIES RoHS: Compliant	0
3LN01C-TB-E	ON Semiconductor	RoHS: Not Compliant	3000	1000:$0.1000 100:$0.1100 500:$0.1100 25:$0.1200 1:$0.1300
3LN01C-TB-E DISTI # 7925192P	ON Semiconductor	MOSFET N-CHANNEL 30V 150MA SWITCHING CP3, RL	1750	100:£0.1460 250:£0.1280 500:£0.1090 1000:£0.0820

영상	부분 #	설명
	Mfr.#: 3LN01C-TB-E OMO.#: OMO-3LN01C-TB-E	MOSFET NCH 1.5V DRIVE SERIES
	Mfr.#: 3LN01C-TB-H OMO.#: OMO-3LN01C-TB-H-ON-SEMICONDUCTOR	IGBT Transistors MOSFET SWITCHING DEVICE
	Mfr.#: 3LN01C6 OMO.#: OMO-3LN01C6-1190	신규 및 오리지널
	Mfr.#: 3LN01CPA(YA) OMO.#: OMO-3LN01CPA-YA--1190	신규 및 오리지널
	Mfr.#: 3LN01CPA-TB OMO.#: OMO-3LN01CPA-TB-1190	신규 및 오리지널
	Mfr.#: 3LN01M OMO.#: OMO-3LN01M-1190	신규 및 오리지널
	Mfr.#: 3LN01SP OMO.#: OMO-3LN01SP-1190	신규 및 오리지널
	Mfr.#: 3LN01SP-AC OMO.#: OMO-3LN01SP-AC-1190	신규 및 오리지널
	Mfr.#: 3LN01SS OMO.#: OMO-3LN01SS-1190	신규 및 오리지널
	Mfr.#: 3LN01SS TL E OMO.#: OMO-3LN01SS-TL-E-1190	신규 및 오리지널

3LN01C-TB-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes