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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| FQP2N60C DISTI # V36:1790_06301279 | ON Semiconductor | 600V N-CHANNEL ADVANCE Q-FET C | 0 |
|
| FQP2N60C DISTI # FQP2N60CFS-ND | ON Semiconductor | MOSFET N-CH 600V 2A TO-220 Min Qty: 1 Container: Tube | 12602In Stock |
|
| FQP2N60C DISTI # 26647987 | ON Semiconductor | 600V N-CHANNEL ADVANCE Q-FET C | 2000 |
|
| FQP2N60C DISTI # 26416007 | ON Semiconductor | 600V N-CHANNEL ADVANCE Q-FET C | 1984 |
|
| FQP2N60C DISTI # FQP2N60C | ON Semiconductor | Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FQP2N60C) RoHS: Compliant Min Qty: 736 Container: Bulk | Americas - 0 |
|
| FQP2N60C DISTI # FQP2N60C | ON Semiconductor | Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FQP2N60C) RoHS: Compliant Min Qty: 2000 Container: Tube | Americas - 0 |
|
| FQP2N60C DISTI # 97K0171 | ON Semiconductor | MOSFET, N CHANNEL, 600V, 2A, TO-220-3,Transistor Polarity:N Channel,Continuous Drain Current Id:2A,Drain Source Voltage Vds:600V,On Resistance Rds(on):3.6ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes RoHS: Compliant | 0 |
|
| FQP2N60C DISTI # 512-FQP2N60C | ON Semiconductor | MOSFET 600V N-Channel Advance Q-FET RoHS: Compliant | 4482 |
|
| FQP2N60C | ON Semiconductor | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 15000 |
|
| FQP2N60C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 1706 |
|
| FQP2N60C DISTI # 6715076 | ON Semiconductor | In a Pack of 5, FQP2N60C N-Channel MOSFET, 2 A, 600 V QFET, 3-Pin TO-220AB ON Semiconductor, PK Min Qty: 5 Container: Package | 205 |
|
| FQP2N60C DISTI # FQP2N60C | ON Semiconductor | Transistor: N-MOSFET,unipolar,600V,1.35A,54W,TO220AB | 166 |
|
| FQP2N60C DISTI # FQP2N60C | ON Semiconductor | N-Ch 600V 2A 54W 4,7R TO220 RoHS: Compliant | 400 |
|
| FQP2N60C | Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | Europe - 150 | |
| FQP2N60C | ISC | TO-220 | 5000 | |
| FQP2N60C DISTI # 1095062 | ON Semiconductor | MOSFET, N, TO-220 RoHS: Compliant | 949 |
|
| FQP2N60C DISTI # 1095062 | ON Semiconductor | MOSFET, N, TO-220 RoHS: Compliant | 1619 |
|
| FQP2N60C DISTI # XSFP00000085553 | Fairchild Semiconductor Corporation | RoHS: Compliant | 1600 in Stock0 on Order |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: FQP2N60C/4N60C/7N6 OMO.#: OMO-FQP2N60C-4N60C-7N6-1190 |
신규 및 오리지널 |
|
|
Mfr.#: FQP2N60C/FQPF2N60C OMO.#: OMO-FQP2N60C-FQPF2N60C-1190 |
신규 및 오리지널 |