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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| SI5402BDC-T1-E3 DISTI # SI5402BDC-T1-E3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 4.9A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI5402BDC-T1-E3 DISTI # SI5402BDC-T1-E3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 4.9A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI5402BDC-T1-E3 DISTI # SI5402BDC-T1-E3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 4.9A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI5402BDC-T1-GE3 DISTI # SI5402BDC-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 4.9A 1206-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI5402BDC-T1-GE3 DISTI # SI5402BDC-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 4.9A 1206-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| SI5402BDC-T1-GE3 DISTI # SI5402BDC-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 4.9A 1206-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| SI5402BDC-T1-GE3 DISTI # 26R1904 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 6.1A,Transistor Polarity:N Channel,Continuous Drain Current Id:6.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V,No. of Pins:8Pins RoHS Compliant: Yes | 0 | |
| SI5402BDC-T1-E3 DISTI # 70026241 | Vishay Siliconix | N-CHANNEL 30-V (D-S) MOSFET RoHS: Compliant | 0 |
|
| SI5402BDC-T1-E3 DISTI # 781-SI5402BDC-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI5468DC-GE3 RoHS: Compliant | 0 | |
| SI5402BDC-T1-GE3 DISTI # 781-SI5402BDC-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI5468DC-GE3 RoHS: Compliant | 0 | |
| SI5402BDC-T1-E3 | Vishay Intertechnologies | 974 | ||
| SI5402BDC-T1-E3 | Vishay Intertechnologies | 2132 | ||
| SI5402BDC-T1-E3 DISTI # 2335327 | Vishay Intertechnologies | MOSFET, N CH, 30V, 4.9A, CHIPFET RoHS: Compliant | 0 |
|
| SI5402BDC-T1-GE3 DISTI # 1871914 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 6.1A RoHS: Compliant | 0 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: SI5400CY OMO.#: OMO-SI5400CY-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI5402BDL OMO.#: OMO-SI5402BDL-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI5404DC OMO.#: OMO-SI5404DC-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI5406DC-T1 OMO.#: OMO-SI5406DC-T1-1190 |
MOSFET RECOMMENDED ALT 781-SI5418DU-T1-GE3 |
|
|
Mfr.#: SI544 OMO.#: OMO-SI544-1190 |
신규 및 오리지널 |
|
Mfr.#: SI5441BDC-T1-E3 OMO.#: OMO-SI5441BDC-T1-E3-VISHAY |
MOSFET P-CH 20V 4.4A 1206-8 |
|
|
Mfr.#: SI544B OMO.#: OMO-SI544B-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI5465ECD-T1-GE3 OMO.#: OMO-SI5465ECD-T1-GE3-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI5473DC-T1 OMO.#: OMO-SI5473DC-T1-1190 |
신규 및 오리지널 |
|
|
Mfr.#: SI5485DU-T1-E3 OMO.#: OMO-SI5485DU-T1-E3-VISHAY |
MOSFET P-CH 20V 12A PPAK CHIPFET |