FDMD86100

Mfr. #:: FDMD86100
제조사:: ON Semiconductor / Fairchild
설명:: MOSFET FET 100V 10.5 MOHM PQFN56
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FDMD86100 데이터 시트
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지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: FDMD86100 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: Power-33-8

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 39 A

Rds On - 드레인 소스 저항:: 10.5 mOhms

Vgs th - 게이트 소스 임계 전압:: 3 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 21 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 33 W

구성:: 듀얼

채널 모드:: 상승

상표명:: PowerTrench 파워 클립

포장:: 릴

키:: 0.8 mm

길이:: 3.3 mm

시리즈:: FDMD86100

트랜지스터 유형:: 2 N-Channel

너비:: 3.3 mm

상표:: 온세미컨덕터 / 페어차일드

가을 시간:: 4.1 ns

상품 유형:: MOSFET

상승 시간:: 4.3 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 18 ns

일반적인 켜기 지연 시간:: 13 ns

단위 무게:: 0.003455 oz

Tags: FDMD86, FDMD, FDM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDMD86100 설명

***emi: Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 39A, 10.5mΩ

***et Europe: Transistor MOSFET Array Dual N-CH 100V 39A 8-Pin PQFN T/R

***ark: 100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, COMMON SOURCE

***ical: Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R

***r Electronics: Power Field-Effect Transistor, 39A I(D), 100V, 0.0105ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This package integrates two N-Channel devices connected internally in common-source configuration and incorporates Shielded Gate technology. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (5 x 6 mm) for higher power density.

***emi: N-Channel PowerTrench® MOSFET 100V, 11.2A, 9.8mΩ

***ure Electronics: Single N-Channel 100 V 17 mOhm 41 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8

***Yang: Trans MOSFET N-CH 100V 11.2A 8-Pin SOIC N T/R - Tape and Reel

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.

***ment14 APAC: MOSFET, N CH, 100V, 11.2A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:11.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0081ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:50A

***emi: Shielded Gate PowerTrench® MOSFET, N-Channel, 100 V, 50 A, 10.2 mΩ

*** Source Electronics: Trans MOSFET N-CH Si 100V 12.5A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 100V 12.5A DPAK-3

*** Stop Electro: Power Field-Effect Transistor, 12.5A I(D), 100V, 0.0102ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

***nell: MOSFET, N CH, 100V, 50A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0085ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:127W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***et Japan: Transistor MOSFET Array Dual N-CH 100V 48A 8-Pin PQFN T/R

***emi: Dual N-Channel PowerTrench® MOSFET 100V 48A, 9.9mΩ

***ark: 100V Dual N-Channel PowerTrench MOSFET - 8LD, PQFN, JEDEC, 5.0X6.0MM, POWERCLIP DUAL, SYMMETRICAL HAL

***ment14 APAC: MOSFET, DUAL N-CH, 100V, 48A, 50W, PQFN; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:48A; Source Voltage Vds:100V; On

***r Electronics: Power Field-Effect Transistor, 48A I(D), 100V, 0.0099ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA

***rchild Semiconductor: This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.

***nell: MOSFET, DUAL N-CH, 100V, 48A, 50W, PQFN; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 48A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.1V; Power Dissipation Pd: 50W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: Single N-Channel 100 V 10 mOhm 44 nC OptiMOS Power Mosfet - TDSON-8

***ow.cn: BSC100N10NSFGATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R - Arrow.com

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):7.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: Single N-Channel 100 V 10.5 mOhm 40 nC OptiMOS Power Mosfet - TDSON-8

***ical: Trans MOSFET N-CH 100V 11.4A Automotive 8-Pin TDSON EP T/R

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 90A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; Current Id Max:90A; Power Dissipation Pd:156W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***ure Electronics: Single N-Channel 100 V 12.3 mOhm 51 nC OptiMOS Power Mosfet - TDSON-8

***roFlash: Power Field-Effect Transistor, 10.6A I(D), 100V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TDSON-8, RoHS

***ment14 APAC: MOSFET, N CH, 71A, 100V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.85V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:114W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

FDMD86100 추가 정보

PowerTrench® MOSFETs: ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Market price

부분 #	제조	설명	재고	가격
FDMD86100 DISTI # V72:2272_06337943	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	72	25:$2.3110 10:$2.3340 1:$3.0371
FDMD86100 DISTI # V36:1790_06337943	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	0
FDMD86100 DISTI # FDMD86100CT-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
FDMD86100 DISTI # FDMD86100DKR-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
FDMD86100 DISTI # FDMD86100TR-ND	ON Semiconductor	MOSFET 2N-CH 100V RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$1.4746
FDMD86100 DISTI # 25921891	ON Semiconductor	100V DUAL N-CHANNEL POWERTRENC	72	25:$2.3110 10:$2.3340 5:$3.0371
FDMD86100 DISTI # FDMD86100	ON Semiconductor	Trans MOSFET N-CH 150V 10A 8-Pin PQFN T/R - Bulk (Alt: FDMD86100) RoHS: Compliant Min Qty: 214 Container: Bulk	Americas - 0	1070:$1.3900 2140:$1.3900 214:$1.4900 428:$1.4900 642:$1.4900
FDMD86100 DISTI # FDMD86100	ON Semiconductor	Trans MOSFET N-CH 150V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMD86100) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$1.2900 6000:$1.2900 12000:$1.2900 18000:$1.2900 30000:$1.2900
FDMD86100 DISTI # 45Y5126	ON Semiconductor	FET 80V 10.5 MOHM PQFN56 / REEL	0	30000:$1.3000 18000:$1.3200 12000:$1.3700 6000:$1.4800 3000:$1.5800 1:$1.6600
FDMD86100 DISTI # 512-FDMD86100	ON Semiconductor	MOSFET FET 80V 10.5 MOHM PQFN56 RoHS: Compliant	2991	1:$2.7800 10:$2.3700 100:$2.0500 250:$1.9400 500:$1.7400 1000:$1.4700 3000:$1.4000
FDMD86100	Fairchild Semiconductor Corporation	Power Field-Effect Transistor RoHS: Compliant	1078	1000:$1.5400 500:$1.6200 100:$1.6900 25:$1.7600 1:$1.9000

영상	부분 #	설명
	Mfr.#: FDMD8540L OMO.#: OMO-FDMD8540L	MOSFET 40V Dual N-Channel PowerTrench MOSFET
	Mfr.#: ADG1411YRUZ OMO.#: OMO-ADG1411YRUZ	Analog Switch ICs 1.8 Ohm 250mA iCMOS Quad SPST
	Mfr.#: ADG1411YRUZ OMO.#: OMO-ADG1411YRUZ-ANALOG-DEVICES	Analog Switch ICs 1.8 Ohm 250mA iCMOS Quad SPST
	Mfr.#: FDMD8540L OMO.#: OMO-FDMD8540L-ON-SEMICONDUCTOR	MOSFET 2N-CH 40V 33A POWER

FDMD86100

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes