IPD80R360P7ATMA1

Mfr. #:: IPD80R360P7ATMA1
제조사:: Infineon Technologies
설명:: MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPD80R360P7ATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IPD80R360P7ATMA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: DPAK-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 800 V

Id - 연속 드레인 전류:: 13 A

Rds On - 드레인 소스 저항:: 310 mOhms

Vgs th - 게이트 소스 임계 전압:: 2.5 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 30 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 84 W

구성:: 하나의

채널 모드:: 상승

상표명:: 쿨모스

포장:: 릴

시리즈:: CoolMOS P7

트랜지스터 유형:: 1 N-Channel

상표:: 인피니언 테크놀로지스

가을 시간:: 6 ns

상품 유형:: MOSFET

상승 시간:: 6 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 40 ns

일반적인 켜기 지연 시간:: 10 ns

부품 번호 별칭:: IPD80R360P7 SP001633516

Tags: IPD80R3, IPD80R, IPD80, IPD8, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD80R360P7ATMA1 설명

***ure Electronics: Single N-Channel 800 V 360 mOhm 30 nC CoolMOS Power Mosfet - DPAK

***ical: Trans MOSFET N-CH 800V 13A 3-Pin(2+Tab) DPAK T/R

***i-Key: MOSFET N-CH 800V 13A TO252-3

***ronik: N-CH 800V 13A 360mOhm TO252-3

***et Europe: LOW POWER_NEW

***ark: Mosfet, N-Ch, 800V, 13A, To-252; Transistor Polarity:n Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:800V; On Resistance Rds(On):0.31Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 800V, 13A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.31ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:84W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CA-N, 800V, 13A, TO-252; Polarità Transistor:Canale N; Corrente Continua di Drain Id:13A; Tensione Drain Source Vds:800V; Resistenza di Attivazione Rds(on):0.31ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:84W; Modello Case Transistor:TO-252; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: 800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power

IPD80R360P7ATMA1 추가 정보

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ P7 MOSFETs: Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.

800V CoolMOS P7 MOSFETs: Infineon 800V CoolMOS P7 MOSFETs combine best-in-class performance with ease-of-use. The P7 set a new benchmark in 800V super junction technologies. The transistors offer up to 0.6 percent efficiency gain and 2°C to 8°C lower MOSFET temperature. The transistors feature optimized device parameters like over 50% reduction in Eoss and Qg, reduced Ciss and Coss. The CoolMOS P7 also enable higher power density designs through lower switching losses and better DPAK RDS(on) products. The CoolMOS P7 are a perfect fit for low-power SMPS applications.

Market price

부분 #	제조	설명	재고	가격
IPD80R360P7ATMA1 DISTI # V36:1790_18205138	Infineon Technologies AG	800V CoolMOS P7 Power Transistor	0	2500000:$0.9300 1250000:$0.9312 250000:$0.9905 25000:$1.0750 2500:$1.0880
IPD80R360P7ATMA1 DISTI # V72:2272_18205138	Infineon Technologies AG	800V CoolMOS P7 Power Transistor	0
IPD80R360P7ATMA1 DISTI # IPD80R360P7ATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 800V 13A TO252-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1362In Stock	1000:$1.2033 500:$1.4522 100:$1.7676 10:$2.1990 1:$2.4500
IPD80R360P7ATMA1 DISTI # IPD80R360P7ATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 800V 13A TO252-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1362In Stock	1000:$1.2033 500:$1.4522 100:$1.7676 10:$2.1990 1:$2.4500
IPD80R360P7ATMA1 DISTI # IPD80R360P7ATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 800V 13A TO252-3 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	5000:$1.0474 2500:$1.0877
IPD80R360P7ATMA1 DISTI # IPD80R360P7ATMA1	Infineon Technologies AG	LOW POWER_NEW - Tape and Reel (Alt: IPD80R360P7ATMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	25000:$0.9739 15000:$0.9919 10000:$1.0269 5000:$1.0649 2500:$1.1049
IPD80R360P7ATMA1 DISTI # SP001633516	Infineon Technologies AG	LOW POWER_NEW (Alt: SP001633516) RoHS: Compliant Min Qty: 2500	Europe - 0	25000:€0.8509 15000:€0.9119 10000:€0.9819 5000:€1.0639 2500:€1.2769
IPD80R360P7ATMA1 DISTI # 24AC9045	Infineon Technologies AG	MOSFET, N-CH, 800V, 13A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:13A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.31ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	0	1000:$1.2800 500:$1.5000 250:$1.6000 100:$1.6900 50:$1.8200 25:$1.9300 10:$2.0600 1:$2.3900
IPD80R360P7ATMA1 DISTI # 726-IPD80R360P7ATMA1	Infineon Technologies AG	MOSFET RoHS: Compliant	0	1:$2.2500 10:$1.9100 100:$1.5300 500:$1.3400 1000:$1.1100 2500:$1.0300 5000:$0.9980
IPD80R360P7ATMA1 DISTI # 2771322	Infineon Technologies AG	MOSFET, N-CH, 800V, 13A, TO-252	0	500:£1.0300 250:£1.1100 100:£1.1800 10:£1.4800 1:£1.9600
IPD80R360P7ATMA1 DISTI # 2771322	Infineon Technologies AG	MOSFET, N-CH, 800V, 13A, TO-252 RoHS: Compliant	0	1000:$1.8200 500:$2.1900 100:$2.6700 10:$3.3200 1:$3.6900

관련 상품

영상	부분 #	설명
	Mfr.#: nRF52840-QIAA-R OMO.#: OMO-NRF52840-QIAA-R	RF System on a Chip - SoC BLE ANT 2.4GHz SOC
	Mfr.#: ISO7141CCDBQR OMO.#: OMO-ISO7141CCDBQR	Digital Isolators Small-FP & Low-Pwr 3/1 Quad Ch Dig Iso
	Mfr.#: TPS7A4001DGNR OMO.#: OMO-TPS7A4001DGNR	LDO Voltage Regulators 50mA,100Vin,Sgl Out put LDO Linear Reg
	Mfr.#: ECS-320-10-33-AGM-TR OMO.#: OMO-ECS-320-10-33-AGM-TR	Crystals 32MHz 25ppm 10pF -20C +70C
	Mfr.#: OMNI-UC OMO.#: OMO-OMNI-UC	Heat Sinks Universal Clip for omniKlip Heatsinks for any TO except TO-220
	Mfr.#: B25673A5102A020 OMO.#: OMO-B25673A5102A020-800	Film Capacitors MKK525-D-10-02
	Mfr.#: MLG0402Q3N9ST000 OMO.#: OMO-MLG0402Q3N9ST000-TDK	Fixed Inductors
	Mfr.#: NRF52840-QIAA-R OMO.#: OMO-NRF52840-QIAA-R-NORDIC-SEMICONDUCTOR	Bluetooth v5.0 Smart Module
	Mfr.#: TPS7A4001DGNR OMO.#: OMO-TPS7A4001DGNR-TEXAS-INSTRUMENTS	LDO Voltage Regulators 50mA,100Vin,Sgl Out put LDO Linear Reg
	Mfr.#: NXE2S1215MC-R7 OMO.#: OMO-NXE2S1215MC-R7-MURATA-POWER-SOLUTIONS	DC DC CONVERTER 15V 2W

유효성

재고:: Available
주문 시:: 2000
수량 입력:

IPD80R360P7ATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$2.25~~; ~~US$2.25~~

10: ~~US$1.91~~; ~~US$19.10~~

100: ~~US$1.53~~; ~~US$153.00~~

500: ~~US$1.34~~; ~~US$670.00~~

1000: ~~US$1.11~~; ~~US$1 110.00~~

시작

IPD80R3 3
IPD80R 42
IPD80 56
IPD8 62
IPD 1152

최신 제품

XENSIV™ DPS368 Ultra-Small Waterproof Pressure Sen

Infineon’s XENSIV™ DPS368 ultra-small waterproof pressure sensor is capable of measuring both pressure and temperature.
600 V Trench Ultrafast 66xx Series IGBTs

Infineon's 66xx series of high-performance 600 V ultrafast, trench-gate, field stop, insulated-gate bipolar transistors (IGBTs).
Mid-Range+ System Basis Chip (SBC)

Infineon’s Mid-Range+ SBC is an integrated circuit with combined power, communication, safety, and support features all in one device.
BTS7008-2EPA Power Switch

Infineon’s BTS7008-2EPA is a 12 V, smart, high-side power switch, PROFET+2 family of single-, dual-, and quad-channel protected high-side power switches.
Compare IPD80R360P7ATMA1

IPD80R360P7 vs IPD80R360P7ATMA1 vs IPD80R3K3P7ATMA1
µPFC™ Power Factor Correction ICs

The IR115x ICs, utilizing Infineon Technologies’ OCC technology, offer high PF, low THD, and excellent DC Bus regulation.

More Newest Products

IPD80R360P7ATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes