TGF2977-SM

TGF2977-SM
Mfr. #:
TGF2977-SM
제조사:
Qorvo
설명:
RF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
TGF2977-SM 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
TGF2977-SM 추가 정보
제품 속성
속성 값
제조사:
코르보
제품 카테고리:
RF JFET 트랜지스터
RoHS:
Y
트랜지스터 유형:
헴트
기술:
GaN SiC
얻다:
13 dB
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
32 V
Vgs - 게이트 소스 항복 전압:
- 2.7 V
Id - 연속 드레인 전류:
326 mA
출력 파워:
6 W
최대 작동 온도:
+ 225 C
Pd - 전력 손실:
8.4 W
장착 스타일:
SMD/SMT
패키지/케이스:
QFN-16
포장:
쟁반
구성:
하나의
키:
0.203 mm
길이:
3 mm
동작 주파수:
DC to 12 GHz
유형:
GaN SiC HEMT
너비:
3 mm
상표:
코르보
채널 수:
1 Channel
개발 키트:
TGF2977-SMEVB1
습기에 민감한:
상품 유형:
RF JFET 트랜지스터
공장 팩 수량:
50
하위 카테고리:
트랜지스터
부품 번호 별칭:
1127257
단위 무게:
0.002014 oz
Tags
TGF297, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC - 12 GHz, 5 W, 13 dB, 32V, GaN, Plastic QFN
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
TGF297x GaN RF Transistor
Qorvo TGF297x GaN RF Transistors have a frequency range of DC to 12GHz. The TGF2970 transistors offer output power from 6W up to 22W. The TGF2970 transistors are constructed using a TQGaN25 process, which features field plate techniques to optimize power and efficiency at high drain bias operation. Learn More
부분 # 제조 설명 재고 가격
TGF2977-SM
DISTI # 772-TGF2977-SM
QorvoRF JFET Transistors 8-12GHz 5W GaN PAE 50% Gain 13dB
RoHS: Compliant
266
  • 1:$24.1500
  • 25:$20.8900
  • 100:$18.0700
  • 250:$16.8000
  • 500:$15.6200
TGF2977-SM-EVB
DISTI # 772-TGF2977-SM-EVB
QorvoRF Development Tools
RoHS: Compliant
0
  • 1:$875.0000
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Mfr.#: C3216JB1V226M160AC

OMO.#: OMO-C3216JB1V226M160AC-TDK

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TPS62172DSGR

Mfr.#: TPS62172DSGR

OMO.#: OMO-TPS62172DSGR-TEXAS-INSTRUMENTS

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유효성
재고:
263
주문 시:
2246
수량 입력:
TGF2977-SM의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$24.15
US$24.15
25
US$20.89
US$522.25
100
US$18.07
US$1 807.00
250
US$16.80
US$4 200.00
500
US$15.62
US$7 810.00
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