IPT60R080G7XTMA1

IPT60R080G7XTMA1
Mfr. #:
IPT60R080G7XTMA1
제조사:
Infineon Technologies
설명:
MOSFET HIGH POWER_NEW
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPT60R080G7XTMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPT60R080G7XTMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
HSOF-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
29 A
Rds On - 드레인 소스 저항:
69 mOhms
Vgs th - 게이트 소스 임계 전압:
3 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
42 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
167 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
시리즈:
CoolMOS C7 Gold
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
가을 시간:
3.5 ns
습기에 민감한:
상품 유형:
MOSFET
상승 시간:
5 ns
공장 팩 수량:
2000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
61 ns
일반적인 켜기 지연 시간:
19 ns
부품 번호 별칭:
IPT60R080G7 SP001615904
Tags
IPT60R0, IPT60, IPT6, IPT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***nell
MOSFET, N-CH, 600V, 29A, 167W, HSOF
***ark
Mosfet, N-Ch, 600V, 29A, 167W, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.069Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ineon
The CoolMOS C7 Gold series (G7) for the first time brings together the benefits of the improved 600V CoolMOS C7 Gold technology, 4pin Kelvin source capability and the improved thermal properties of the TO-Leadless (TOLL) package to enable a possible SMD solution for high current hard switching topologies such as power factor correction (PFC) up to 3kW and for resonant circuits such as high end LLC. | Summary of Features: Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G; Enables best-in-class R DS(on) in smallest footprint | Benefits: Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept; Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements; Production cost reduction by moving to SMD through quicker assembly times | Target Applications: Telecom; Server; Solar; Industrial SMPS
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ C7 Gold (G7) Power MOSFETs
Infineon Technologies CoolMOS™ C7 Gold (G7) Power MOSFETs are housed in the new SMD TO-Leadless (TOLL) package using the Kelvin source concept. The G7 MOSFETs combine improved 600V and 650V CoolMOS™ G7 technology, 4-pin Kelvin source capability, and the improved thermal properties of the TO-Leadless package. This enables an SMD solution for high current hard switching topologies like power factor correction (PFC) up to 3kW. For the 600V CoolMOS™ G7, the MOSFETs can be used for resonant circuits like high end LLC.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
IPT60R080G7XTMA1
DISTI # V72:2272_17076899
Infineon Technologies AGIPT60R080G7XTMA10
    IPT60R080G7XTMA1
    DISTI # V36:1790_17076899
    Infineon Technologies AGIPT60R080G7XTMA10
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1CT-ND
      Infineon Technologies AGMOSFET N-CH 650V 29A HSOF-8
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)
      2859In Stock
      • 1000:$3.7988
      • 500:$4.3616
      • 100:$5.0088
      • 10:$6.0500
      • 1:$6.7000
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 650V 29A HSOF-8
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      2859In Stock
      • 1000:$3.7988
      • 500:$4.3616
      • 100:$5.0088
      • 10:$6.0500
      • 1:$6.7000
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1TR-ND
      Infineon Technologies AGMOSFET N-CH 650V 29A HSOF-8
      RoHS: Compliant
      Min Qty: 2000
      Container: Tape & Reel (TR)
      2000In Stock
      • 2000:$3.6427
      IPT60R080G7XTMA1
      DISTI # IPT60R080G7XTMA1
      Infineon Technologies AGHIGH POWER_NEW - Tape and Reel (Alt: IPT60R080G7XTMA1)
      RoHS: Compliant
      Min Qty: 2000
      Container: Reel
      Americas - 0
      • 12000:$3.2900
      • 20000:$3.2900
      • 8000:$3.3900
      • 4000:$3.5900
      • 2000:$3.6900
      IPT60R080G7XTMA1
      DISTI # 84AC6841
      Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 167W, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:29A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.069ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes2298
      • 1000:$3.5500
      • 500:$4.0700
      • 250:$4.4600
      • 100:$4.6800
      • 50:$5.0300
      • 25:$5.3800
      • 10:$5.6500
      • 1:$6.2500
      IPT60R080G7XTMA1
      DISTI # 726-IPT60R080G7XTMA1
      Infineon Technologies AGMOSFET HIGH POWER_NEW
      RoHS: Compliant
      1680
      • 1:$6.1900
      • 10:$5.5900
      • 25:$5.3300
      • 100:$4.6300
      • 250:$4.4200
      • 500:$4.0300
      • 1000:$3.5100
      • 2000:$3.3800
      IPT60R080G7XTMA1
      DISTI # 2983371
      Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 167W, HSOF2298
      • 500:£2.9600
      • 250:£3.2300
      • 100:£3.3800
      • 10:£3.9000
      • 1:£5.0100
      IPT60R080G7XTMA1
      DISTI # 2983371
      Infineon Technologies AGMOSFET, N-CH, 600V, 29A, 167W, HSOF
      RoHS: Compliant
      2298
      • 250:$5.2100
      • 100:$5.4700
      • 25:$6.1500
      • 1:$7.0200
      영상 부분 # 설명
      SI8273GB-IS1

      Mfr.#: SI8273GB-IS1

      OMO.#: OMO-SI8273GB-IS1

      Gate Drivers High CMTI 2.5 kV 4.2 V UVLO HS/LS isolated driver
      IPL60R065P7AUMA1

      Mfr.#: IPL60R065P7AUMA1

      OMO.#: OMO-IPL60R065P7AUMA1

      MOSFET HIGH POWER_NEW
      IPT60R028G7XTMA1

      Mfr.#: IPT60R028G7XTMA1

      OMO.#: OMO-IPT60R028G7XTMA1

      MOSFET HIGH POWER NEW
      IPT60R050G7XTMA1

      Mfr.#: IPT60R050G7XTMA1

      OMO.#: OMO-IPT60R050G7XTMA1

      MOSFET HIGH POWER_NEW
      PIC18F65K40-E/PT

      Mfr.#: PIC18F65K40-E/PT

      OMO.#: OMO-PIC18F65K40-E-PT

      8-bit Microcontrollers - MCU 32KB Flash, 2KB RAM, 256B EEPROM, 10b ADC2, 5b DAC, Comp, PWM, CCP, CWG, HLT, WWDT, SCAN/CRC, ZCD, PPS, EUSART, SPI/I2C, IDLE/DOZE/PMD
      FL5150MX

      Mfr.#: FL5150MX

      OMO.#: OMO-FL5150MX

      Switching Controllers IGBT/MOSFET AC Phase Cut Dimmer Cntroller
      CC0603KRX7R9BB104

      Mfr.#: CC0603KRX7R9BB104

      OMO.#: OMO-CC0603KRX7R9BB104

      Multilayer Ceramic Capacitors MLCC - SMD/SMT 100nF 50V X7R 10%
      3727

      Mfr.#: 3727

      OMO.#: OMO-3727

      Development Boards & Kits - ARM Adafruit ItsyBitsy M0 Express
      IPL60R065P7AUMA1

      Mfr.#: IPL60R065P7AUMA1

      OMO.#: OMO-IPL60R065P7AUMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 4VSON
      IPT60R050G7XTMA1

      Mfr.#: IPT60R050G7XTMA1

      OMO.#: OMO-IPT60R050G7XTMA1-INFINEON-TECHNOLOGIES

      MOSFET N-CH 650V 44A HSOF-8
      유효성
      재고:
      Available
      주문 시:
      1984
      수량 입력:
      IPT60R080G7XTMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$6.19
      US$6.19
      10
      US$5.59
      US$55.90
      25
      US$5.33
      US$133.25
      100
      US$4.63
      US$463.00
      250
      US$4.42
      US$1 105.00
      500
      US$4.03
      US$2 015.00
      1000
      US$3.51
      US$3 510.00
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