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IXYA50N65C3

IXYA50N65C3
Mfr. #:
IXYA50N65C3
제조사:
Littelfuse
설명:
IGBT Transistors 650V/130A XPT C3-Class TO-263
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXYA50N65C3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IXYA50N65C3 추가 정보
제품 속성
속성 값
제조사
익시스
제품 카테고리
IGBT - 싱글
시리즈
GenX3, XPT
포장
튜브
장착 스타일
SMD/SMT
상표명
XPT
패키지 케이스
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
입력 유형
기준
장착형
표면 실장
공급자-장치-패키지
TO-263
구성
하나의
파워맥스
600W
역복구-시간-trr
-
전류 수집기 Ic-Max
130A
Voltage-Collector-Emitter-Breakdown-Max
650V
IGBT형
PT
전류 수집기 펄스 Icm
250A
Vce-on-Max-Vge-Ic
2.1V @ 15V, 36A
스위칭 에너지
1.3mJ (on), 370μJ (off)
게이트 차지
80nC
Td-on-off-25°C
22ns/80ns
시험조건
400V, 36A, 5 Ohm, 15V
Pd 전력 손실
600 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
컬렉터-이미터-전압-VCEO-최대
650 V
컬렉터-이미터-포화-전압
2.1 V
연속 수집기 전류 at-25-C
130 A
게이트 이미 터 누설 전류
100 nA
최대 게이트 이미 터 전압
30 V
연속 수집기 전류 Ic-Max
130 A
Tags
IXYA, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 132A 600000mW 3-Pin(2+Tab) TO-263AA
***i-Key
IGBT 650V 130A 600W TO263
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
부분 # 제조 설명 재고 가격
IXYA50N65C3
DISTI # IXYA50N65C3-ND		IXYS CorporationIGBT 650V 130A 600W TO263
RoHS: Compliant
Min Qty: 1
Container: Tube		62In Stock
  • 1000:$3.3810
  • 500:$4.0089
  • 250:$4.4678
  • 100:$4.9508
  • 50:$5.4338
  • 10:$6.0380
  • 1:$6.7600
IXYA50N65C3
DISTI # 30206477		IXYS CorporationXPT 650V IGBTGENX3
RoHS: Compliant		250
  • 1000:$3.2458
  • 500:$3.8485
  • 250:$4.2890
  • 100:$4.7528
  • 25:$5.2163
  • 10:$5.7965
  • 4:$6.4896
IXYA50N65C3
DISTI # 747-IXYA50N65C3		IXYS CorporationIGBT Transistors 650V/130A XPT C3-Class TO-263
RoHS: Compliant		140
  • 1:$6.9600
  • 10:$6.2200
  • 25:$5.4300
  • 50:$5.1800
  • 100:$5.1000
  • 250:$4.6000
  • 500:$3.6200
  • 1000:$3.3800
영상 부분 # 설명
IXYA50N65C3-TRL

Mfr.#: IXYA50N65C3-TRL

OMO.#: OMO-IXYA50N65C3-TRL

 Discrete Semiconductor Modules XPT 650V IGBT GenX3
IXYA50N65C3

Mfr.#: IXYA50N65C3

OMO.#: OMO-IXYA50N65C3

 IGBT Transistors 650V/130A XPT C3-Class TO-263
IXYA50N65C3

Mfr.#: IXYA50N65C3

OMO.#: OMO-IXYA50N65C3-IXYS-CORPORATION

 IGBT Transistors 650V/130A XPT C3-Class TO-263
유효성
재고:
Available
주문 시:
3500
수량 입력:
IXYA50N65C3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$5.07
US$5.07
10
US$4.82
US$48.16
100
US$4.56
US$456.30
500
US$4.31
US$2 154.75
1000
US$4.06
US$4 056.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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