FCPF650N80Z

Mfr. #:: FCPF650N80Z
제조사:: ON Semiconductor / Fairchild
설명:: MOSFET SF2 800V 650MOHM E TO220F
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FCPF650N80Z 데이터 시트
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추가 정보:: FCPF650N80Z 추가 정보

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220FP-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 800 V

Id - 연속 드레인 전류:: 8 A

Rds On - 드레인 소스 저항:: 650 mOhms

Vgs th - 게이트 소스 임계 전압:: 4.5 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 27 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 30.5 W

구성:: 하나의

상표명:: 슈퍼펫 II

포장:: 튜브

키:: 16.07 mm

길이:: 10.36 mm

시리즈:: FCPF650N80Z

트랜지스터 유형:: 1 N-Channel

너비:: 4.9 mm

상표:: 온세미컨덕터 / 페어차일드

가을 시간:: 3.4 ns

상품 유형:: MOSFET

상승 시간:: 11 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 40 ns

일반적인 켜기 지연 시간:: 17 ns

단위 무게:: 0.080072 oz

Tags: FCPF6, FCPF, FCP

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCPF650N80Z 설명

***emi: N-Channel Power MOSFET, SUPERFET® II, 800 V, 10 A, 650 mΩ, TO-220F

*** Stop Electro: Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***Yang: Trans MOSFET N-CH 800V 8A 3-Pin TO-220F Tube - Rail/Tube

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

***ineon SCT: Single N-Channel 600 V 460 mOhm 28 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS

***ical: Trans MOSFET N-CH 600V 13.1A 3-Pin(3+Tab) TO-220FP Tube

***ark: Mosfet, N-Ch, 600V, 13.1A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:13.1A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.41Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***emi: N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F

***ark: SuperFET2, 600mohm, TO220F, Zener - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD

*** Stop Electro: Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***Yang: Trans MOSFET N-CH 600V 7.4A 3-Pin TO-220F Tube - Rail/Tube

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***emi: N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, TO-220F

*** Stop Electro: Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***ical: Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220F Rail

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

***ineon SCT: Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS

***ow.cn: Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N-CH, 600V, 9.9A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***emi: N-Channel Power MOSFET, UniFETTM II, 600 V, 10 A, 750 mΩ, TO-220F

***itex: Transistor: N-MOSFET; unipolar; 600V; 10A; 0.75ohm; 38W; -55+150 deg.C; THT; TO220F

*** Source Electronics: Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 600V 10A TO-220F

***ark: RAIL/UNIFET2 600V N-CHANNEL MOSFET, TO220F SINGLE GAUGE

***nell: MOSFET, N-CHANNEL, 600V, 10A, TO-220F-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.; Available until stocks are exhausted Alternative available

***roFlash: Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***el Electronic: VISHAY SIHF7N60E-E3 MOSFET Transistor, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V

***ure Electronics: SiHF7N60E Series 600 V 7 A 31 W Through Hole Power Mosfet - TO-220FP

***et: Trans MOSFET N-CH 600V 7A 3-Pin TO-220 Full-Pak

***nell: MOSFET, N-CH, 600V, 7A, TO220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:31W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

FCPF650N80Z 추가 정보

SuperFET® II Power MOSFETs: ON Semiconductor SuperFET® II Power MOSFETs are a new proprietary generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. These SuperFET® II MOSFETs are suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.Learn More

Market price

부분 #	제조	설명	재고	가격
FCPF650N80Z DISTI # V79:2366_17795829	ON Semiconductor	SUPERFET2 800V 650MOHM ZENER	282	10000:$0.7546 5000:$0.7923 2000:$0.8315 1000:$0.9016 500:$1.0962 100:$1.2604 10:$1.5897 1:$2.0623
FCPF650N80Z DISTI # V99:2348_06359854	ON Semiconductor	SUPERFET2 800V 650MOHM ZENER	0	1000000:$0.8495 500000:$0.8499 100000:$0.8937 10000:$0.9782 1000:$0.9927
FCPF650N80Z DISTI # V36:1790_06359854	ON Semiconductor	SUPERFET2 800V 650MOHM ZENER	0	1000000:$0.7902 500000:$0.7907 100000:$0.8505 10000:$0.9716 1000:$0.9927
FCPF650N80Z DISTI # FCPF650N80Z-ND	ON Semiconductor	MOSFET N-CH 800V 8A TO220F RoHS: Compliant Min Qty: 1000 Container: Tube	Temporarily Out of Stock	1000:$0.9927
FCPF650N80Z DISTI # 26119025	ON Semiconductor	SUPERFET2 800V 650MOHM ZENER	282	13:$2.0623
FCPF650N80Z DISTI # FCPF650N80Z	ON Semiconductor	Trans MOSFET N-CH 800V 8A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF650N80Z) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	10000:$0.8039 6000:$0.8249 4000:$0.8349 2000:$0.8459 1000:$0.8519
FCPF650N80Z DISTI # FCPF650N80Z	ON Semiconductor	Trans MOSFET N-CH 800V 8A 3-Pin TO-220F Tube - Bulk (Alt: FCPF650N80Z) Min Qty: 264 Container: Bulk	Americas - 0	2640:$1.0900 264:$1.1900 528:$1.1900 792:$1.1900 1320:$1.1900
FCPF650N80Z DISTI # FCPF650N80Z	ON Semiconductor	Trans MOSFET N-CH 800V 8A 3-Pin TO-220F Tube (Alt: FCPF650N80Z) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1000:€0.8099 500:€0.8399 100:€0.8719 50:€0.9069 25:€0.9449 10:€1.0299 1:€1.1339
FCPF650N80Z DISTI # 512-FCPF650N80Z	ON Semiconductor	MOSFET SF2 800V 650MOHM E TO220F RoHS: Compliant	984	1:$1.9100 10:$1.6300 100:$1.3000 500:$1.1400 1000:$0.9450 2000:$0.8800 5000:$0.8470
FCPF650N80Z	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	9654	1000:$0.9500 500:$1.0000 100:$1.0400 25:$1.0800 1:$1.1700
FCPF650N80Z DISTI # 8647929P	ON Semiconductor	MOSFET N-CH 800V 8A SUPERFET II TO220F, TU	740	100:£1.2340 50:£1.5440

영상	부분 #	설명
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	Mfr.#: AC0603FR-13100RL OMO.#: OMO-AC0603FR-13100RL-1190	YAGAC0603FR-13100RL - Tape and Reel (Alt: AC0603FR-13100RL)
	Mfr.#: X-NUCLEO-LPM01A OMO.#: OMO-X-NUCLEO-LPM01A-STMICROELECTRONICS	Nucleo expansion board
	Mfr.#: INA181A1IDBVR OMO.#: OMO-INA181A1IDBVR-TEXAS-INSTRUMENTS	INA181A1IDBVR

FCPF650N80Z

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes