IS43R83200D-6TL-TR

Mfr. #:: IS43R83200D-6TL-TR
제조사:: ISSI
설명:: DRAM 256M (32Mx8) 166MHz DDR 2.5v
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IS43R83200D-6TL-TR 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IS43R83200D-6TL-TR 추가 정보

제품 속성
속성 값

제조사:: ISSI

제품 카테고리:: 적은 양

RoHS:: Y

유형:: SDRAM - DDR1

데이터 버스 폭:: 8 bit

조직:: 32 M x 8

패키지/케이스:: TSOP-66

메모리 크기:: 256 Mbit

최대 클록 주파수:: 166 MHz

액세스 시간:: 6 ns

공급 전압 - 최대:: 2.7 V

공급 전압 - 최소:: 2.3 V

공급 전류 - 최대:: 280 mA

최소 작동 온도:: 0 C

최대 작동 온도:: + 70 C

시리즈:: IS43R83200D

포장:: 릴

상표:: ISSI

장착 스타일:: SMD/SMT

습기에 민감한:: 네

작동 공급 전압:: 2.5 V

상품 유형:: 적은 양

공장 팩 수량:: 1500

하위 카테고리:: 메모리 및 데이터 저장

Tags: IS43R83200D-6, IS43R83200D, IS43R83, IS43R8, IS43R, IS43, IS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS43R83200D-6TL-TR 평가 및 리뷰

R***n

Very long shipping... But the goods came, everything corresponds to the description... For such a price you can wait. Track is not tracked, which is also not convenient.

2019-05-14

D***c

SRB

arrived in 30 days to Serbia, all it's OK

2019-05-16

IS43R83200D-6TL-TR 설명

***et: DRAM Chip DDR SDRAM 256M-Bit 32M x 8 2.5V 66-Pin TSOP-II T/R

***i-Key: IC DRAM 256MBIT PAR 66TSOP II

IS43R83200D-6TL-TR 추가 정보

IS43R32800D 8Mx32 256-Mbit DDR SDRAM: ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.

Market price

부분 #	제조	설명	재고	가격
IS43R83200D-6TL-TR DISTI # IS43R83200D-6TL-TR-ND	Integrated Silicon Solution Inc	IC DRAM 256M PARALLEL 66TSOP II RoHS: Compliant Min Qty: 1500 Container: Tape & Reel (TR)	Limited Supply - Call	1500:$4.4968
IS43R83200D-6TL-TR DISTI # IS43R83200D-6TL-TR	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 256M-Bit 32M x 8 2.5V 66-Pin TSOP-II T/R - Tape and Reel (Alt: IS43R83200D-6TL-TR) RoHS: Compliant Min Qty: 1500 Container: Reel	Americas - 0	1500:$4.3900 3000:$4.2900 6000:$4.0900 9000:$3.9900 15000:$3.7900

관련 상품

영상	부분 #	설명
	Mfr.#: IS43R83200F-5TL-TR OMO.#: OMO-IS43R83200F-5TL-TR	DRAM 256M, 2.5V, DDR, 32Mx8, 200MHz
	Mfr.#: IS43R83200D-5TL-TR OMO.#: OMO-IS43R83200D-5TL-TR	DRAM 256M (32Mx8) 200MHz DDR 2.5v
	Mfr.#: IS43R83200F-6TLI-TR OMO.#: OMO-IS43R83200F-6TLI-TR	DRAM 256M, 2.5V, DDR, 32Mx8, 166MHz
	Mfr.#: IS43R83200F-6TL OMO.#: OMO-IS43R83200F-6TL	DRAM 256M, 2.5V, DDR, 32Mx8, 166MHz
	Mfr.#: IS43R83200B-6TL OMO.#: OMO-IS43R83200B-6TL	DRAM 256M (32Mx8) 333MHz DDR 2.5v
	Mfr.#: IS43R83200F-6TLI-TR OMO.#: OMO-IS43R83200F-6TLI-TR-INTEGRATED-SILICON-SOLUTION	DRAM 256M, 2.5V, DDR, 32Mx8, 166MHz
	Mfr.#: IS43R83200F-5TL-TR OMO.#: OMO-IS43R83200F-5TL-TR-INTEGRATED-SILICON-SOLUTION	DRAM 256M, 2.5V, DDR, 32Mx8, 200MHz
	Mfr.#: IS43R83200F-5TL OMO.#: OMO-IS43R83200F-5TL-INTEGRATED-SILICON-SOLUTION	DRAM 256M, 2.5V, DDR, 32Mx8, 200MHz
	Mfr.#: IS43R83200D-5TLI-TR OMO.#: OMO-IS43R83200D-5TLI-TR-1190	신규 및 오리지널
	Mfr.#: IS43R83200B-5TL OMO.#: OMO-IS43R83200B-5TL-INTEGRATED-SILICON-SOLUTION	IC DRAM 256M PARALLEL 66TSOP II