TGS4310-SM

Mfr. #:: TGS4310-SM
제조사:: Qorvo
설명:: RF Switch ICs 13-19GHz SPDT 2 Watt IL <1.7dB Speed 20ns
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TGS4310-SM 데이터 시트
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ECAD Model:
추가 정보:: TGS4310-SM 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF 스위치 IC

RoHS:: Y

스위치 수:: 하나의

스위치 구성:: SPDT

동작 주파수:: 13 GHz to 19 GHz

삽입 손실:: 1.7 dB

차단 해제 - 일반:: 20 dB

최대 작동 온도:: + 85 C

장착 스타일:: SMD/SMT

패키지/케이스:: QFN-22

포장:: 와플

키:: 4 mm

길이:: 4 mm

너비:: 1.47 mm

상표:: 코르보

최소 작동 온도:: - 40 C

습기에 민감한:: 네

작동 공급 전류:: 1.7 mA

Pd - 전력 손실:: 1.8 W

상품 유형:: RF 스위치 IC

공장 팩 수량:: 50

하위 카테고리:: 무선 및 RF 집적 회로

공급 전압 - 최대:: 5 V

공급 전압 - 최소:: 3.3 V

부품 번호 별칭:: 1113261

Tags: TGS43, TGS4, TGS

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TGS4310-SM 설명

***W: RF Switch, SPDT, 13 to 19 GHz, 1.7 dB IL, 20 dB Isolation, 34 dBm Pwr Rating

TGS4310-SM 추가 정보

TGS4310-SM 2W SPDT Switch: Qorvo TGS4310-SM is a packaged single-pole, double-throw (SPDT) reflective switch operating from 13 to 19GHz. The TGS4310-SM supports 2W of incident power at 0.1dB compression with an insertion loss of <1.7dB. It's available in a low-cost, 4x4mm air cavity ceramic QFN for mechanical robustness and ease of handling. Fully matched to 50ohms at all ports, it uses standard positive control voltages and requires very little control current making system integration simple without impacting DC power budgets.Learn More

GaN Solutions: Qorvo Qorvo is your smart RF partner for building solutions using gallium nitride (GaN) technology. Qorvo's is the only supplier to achieve MRL 9 using USAF MRL tool and is a “trusted” supplier with industry-leading GaN reliability. Qorvo is a world-class certified manufacturer - ISO9001, ISO14001, ISO/TS16949.Learn More

GaN Switches: Qorvo GaN Switches are suited for RF Switching applications and feature high breakdown voltages combined with the low on-resistance and off-state capacitance. This enables a dramatic increases in power handling. GaAs FET switches are widely used in the RF industry, and typically used for power levels on the order of a few watts or less. GaN FET's are able to use the same circuit architectures to handle power levels on the order of tens of watts.

Market price

부분 #	제조	설명	재고	가격
TGS4310-SM DISTI # 772-TGS4310-SM	Qorvo	RF Switch ICs 13-19GHz SPDT 2 Watt IL <1.7dB Speed 20ns RoHS: Compliant	38	1:$84.0000 25:$66.5400 100:$52.7200

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