IXFN82N60P

IXFN82N60P
Mfr. #:
IXFN82N60P
제조사:
Littelfuse
설명:
IGBT Transistors MOSFET DIODE Id82 BVdass600
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFN82N60P 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IXFN82N60P 추가 정보
제품 속성
속성 값
제조사
익시스
제품 카테고리
기준 치수
시리즈
극지HV
포장
튜브
단위 무게
1.340411 oz
장착 스타일
SMD/SMT
상표명
극성 HiPerFET
패키지 케이스
SOT-227-4, miniBLOC
기술
작동 온도
-55°C ~ 150°C (TJ)
장착형
섀시 마운트
채널 수
1 Channel
공급자-장치-패키지
SOT-227B
구성
단일 듀얼 소스
FET형
MOSFET N-채널, 금속 산화물
파워맥스
1040W
트랜지스터형
1 N-Channel
드레인-소스 전압 Vdss
600V
입력-커패시턴스-Ciss-Vds
23000pF @ 25V
FET 기능
기준
Current-Continuous-Drain-Id-25°C
72A
Rds-On-Max-Id-Vgs
75 mOhm @ 41A, 10V
Vgs-th-Max-Id
5V @ 8mA
Gate-Charge-Qg-Vgs
240nC @ 10V
Pd 전력 손실
1.04 kW
최대 작동 온도
+ 150 C
최소 작동 온도
- 55 C
가을철
24 ns
상승 시간
23 ns
Vgs 게이트 소스 전압
30 V
Id-연속-드레인-전류
72 A
Vds-드레인-소스-고장-전압
600 V
Vgs-th-Gate-Source-Threshold-Voltage
5 V
Rds-On-Drain-Source-Resistance
75 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
79 ns
일반 켜기 지연 시간
28 ns
Qg-Gate-Charge
240 nC
순방향 트랜스컨덕턴스-최소
50 S
채널 모드
상승
Tags
IXFN8, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
부분 # 제조 설명 재고 가격
IXFN82N60P
DISTI # IXFN82N60P-ND
IXYS CorporationMOSFET N-CH 600V 72A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube
236In Stock
  • 250:$21.0540
  • 100:$22.9416
  • 30:$24.6840
  • 10:$26.8620
  • 1:$29.0400
IXFN82N60P
DISTI # 747-IXFN82N60P
IXYS CorporationMOSFET DIODE Id82 BVdass600
RoHS: Compliant
138
  • 1:$29.0400
  • 5:$27.5900
  • 10:$26.8700
  • 25:$24.6900
  • 50:$23.6300
  • 100:$22.9400
  • 200:$21.0500
IXFN82N60P
DISTI # 194130
IXYS CorporationMOSFET N-CHANNEL 600V 72A SOT227B, EA167
  • 20:£19.8800
  • 10:£20.8100
  • 1:£23.1200
IXFN82N60PIXYS Corporation82 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET69
  • 55:$17.8200
  • 27:$18.5625
  • 1:$19.3050
IXFN82N60PIXYS Corporation82 A, 600 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET29
  • 28:$34.6163
  • 14:$36.6525
  • 1:$40.7250
IXFN82N60P
DISTI # IXFN82N60P
IXYS CorporationN-Ch 600V 72A 1040W 0,075R SOT227B
RoHS: Compliant
2
  • 1:€23.4000
  • 5:€20.4000
  • 10:€19.4000
  • 25:€18.7000
IXFN82N60P
DISTI # XSFP00000159107
IXYS Corporation 
RoHS: Compliant
30 in Stock0 on Order
  • 30:$27.7800
  • 10:$34.1800
영상 부분 # 설명
IXFN82N60P

Mfr.#: IXFN82N60P

OMO.#: OMO-IXFN82N60P

MOSFET DIODE Id82 BVdass600
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Mfr.#: IXFN80N50P

OMO.#: OMO-IXFN80N50P

MOSFET 500V 80A
IXFN80N60P3

Mfr.#: IXFN80N60P3

OMO.#: OMO-IXFN80N60P3

MOSFET Polar3 HiPerFET Power MOSFET
IXFN80N50Q3

Mfr.#: IXFN80N50Q3

OMO.#: OMO-IXFN80N50Q3

MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A
IXFN80N50

Mfr.#: IXFN80N50

OMO.#: OMO-IXFN80N50

MOSFET 500V 80A
IXFN80N10S1

Mfr.#: IXFN80N10S1

OMO.#: OMO-IXFN80N10S1-1190

신규 및 오리지널
IXFN80N50

Mfr.#: IXFN80N50

OMO.#: OMO-IXFN80N50-IXYS-CORPORATION

MOSFET N-CH 500V 80A SOT-227B
IXFN80N50P

Mfr.#: IXFN80N50P

OMO.#: OMO-IXFN80N50P-IXYS-CORPORATION

MOSFET N-CH 500V 66A SOT-227
IXFN82N60Q3

Mfr.#: IXFN82N60Q3

OMO.#: OMO-IXFN82N60Q3-IXYS-CORPORATION

MOSFET N-CH 600V 66A SOT-227
IXFN82N60P

Mfr.#: IXFN82N60P

OMO.#: OMO-IXFN82N60P-IXYS-CORPORATION

IGBT Transistors MOSFET DIODE Id82 BVdass600
유효성
재고:
Available
주문 시:
5500
수량 입력:
IXFN82N60P의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$26.73
US$26.73
10
US$25.39
US$253.94
100
US$24.06
US$2 405.70
500
US$22.72
US$11 360.25
1000
US$21.38
US$21 384.00
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