T1G4004532-FS

T1G4004532-FS
Mfr. #:
T1G4004532-FS
제조사:
Qorvo
설명:
RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
T1G4004532-FS 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
T1G4004532-FS 추가 정보
제품 속성
속성 값
제조사:
코르보
제품 카테고리:
RF JFET 트랜지스터
RoHS:
Y
기술:
GaN SiC
Vds - 드레인 소스 항복 전압:
32 V
Vgs - 게이트 소스 항복 전압:
100 V
Pd - 전력 손실:
45 W
장착 스타일:
SMD/SMT
포장:
쟁반
구성:
하나의
키:
4.064 mm
길이:
9.652 mm
너비:
5.842 mm
상표:
코르보
게이트 소스 차단 전압:
- 2.9 V
습기에 민감한:
상품 유형:
RF JFET 트랜지스터
공장 팩 수량:
50
하위 카테고리:
트랜지스터
부품 번호 별칭:
1092444
Tags
T1G4004, T1G400, T1G4, T1G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 3.5 GHz, 45 W, 19 dB, 32V, GaN
T1G4004532 GaN RF Power Transistors
Qorvo T1G4004532 GaN RF Power Transistors are 45W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5GHz. The device is constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
부분 # 제조 설명 재고 가격
T1G4004532-FS
DISTI # 772-T1G4004532-FS
QorvoRF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
RoHS: Compliant
37
  • 1:$220.0000
  • 25:$198.5500
T1G4004532-FS-EVB1
DISTI # 772-T1G4004532-FS-EB
QorvoRF Development Tools DC-35.GHz GaN Eval Board
RoHS: Compliant
2
  • 1:$875.0000
영상 부분 # 설명
T1G4004532-FS

Mfr.#: T1G4004532-FS

OMO.#: OMO-T1G4004532-FS

RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FL

Mfr.#: T1G4004532-FL

OMO.#: OMO-T1G4004532-FL

RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FL

Mfr.#: T1G4004532-FL

OMO.#: OMO-T1G4004532-FL-318

RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G4004532-FS

Mfr.#: T1G4004532-FS

OMO.#: OMO-T1G4004532-FS-318

RF JFET Transistors DC-35.GHz GaN 45w 32v Gain >19dB
T1G40020036-FL

Mfr.#: T1G40020036-FL

OMO.#: OMO-T1G40020036-FL-1190

신규 및 오리지널
T1G4003532

Mfr.#: T1G4003532

OMO.#: OMO-T1G4003532-1190

신규 및 오리지널
T1G4003532-FL

Mfr.#: T1G4003532-FL

OMO.#: OMO-T1G4003532-FL-1152

RF JFET Transistors DC-3.5GHz 35Watt 32Volt GaN
T1G4003532-FS

Mfr.#: T1G4003532-FS

OMO.#: OMO-T1G4003532-FS-1152

RF JFET Transistors DC-3.5GHz 35Watt 32Volt GaN
T1G4004532-FS-EVB1

Mfr.#: T1G4004532-FS-EVB1

OMO.#: OMO-T1G4004532-FS-EVB1-1152

RF Development Tools DC-35.GHz GaN Eval Board
T1G4005528-FS-EVB1

Mfr.#: T1G4005528-FS-EVB1

OMO.#: OMO-T1G4005528-FS-EVB1-1152

RF Development Tools DC-3.5GHz 28Volt Eval Board
유효성
재고:
37
주문 시:
2020
수량 입력:
T1G4004532-FS의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$220.00
US$220.00
25
US$198.55
US$4 963.75
시작
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