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IPB026N06NATMA1

IPB026N06NATMA1
Mfr. #:
IPB026N06NATMA1
제조사:
Infineon Technologies
설명:
Darlington Transistors MOSFET N-Ch 60V 100A D2PAK-2
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB026N06NATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
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ECAD Model:
추가 정보:
IPB026N06NATMA1 추가 정보
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
IPB026N06
포장
릴
부분 별칭
IPB026N06N IPB026N06NXT SP000962142
단위 무게
0.139332 oz
장착 스타일
SMD/SMT
상표명
옵티모스
패키지 케이스
TO-263-3
기술
시
채널 수
1 Channel
구성
하나의
트랜지스터형
1 N-Channel
Pd 전력 손실
136 W
최대 작동 온도
+ 175 C
최소 작동 온도
- 55 C
가을철
8 ns
상승 시간
15 ns
Vgs 게이트 소스 전압
20 V
Id-연속-드레인-전류
100 A
Vds-드레인-소스-고장-전압
60 V
Vgs-th-Gate-Source-Threshold-Voltage
2.8 V
Rds-On-Drain-Source-Resistance
2.6 mOhms
트랜지스터 극성
N-채널
일반 꺼짐 지연 시간
30 ns
일반 켜기 지연 시간
17 ns
Qg-Gate-Charge
56 nC
순방향 트랜스컨덕턴스-최소
160 S
Tags
IPB02, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 5, N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK Infineon IPB026N06NATMA1
***et Europe
Trans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R
***ark
MOSFET, N-CH, 60V, 100A, TO-263-3
***ical
Trans MOSFET N-CH 60V 100A
***i-Key
MOSFET N-CH 60V 25A TO263-3
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:136W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CANALE N 60V 100A TO-263-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0023ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:136W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 3 - 168 ore; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. | Summary of Features: Optimized for synchronous rectification; 40% lower R DS(on) than alternative devices; 40% improvement of FOM over similar devices; RoHS compliant - halogen free; MSL1 rated | Benefits: Highest system efficiency; Less paralleling required; Increased power density; System cost reduction; Very low voltage overshoot | Target Applications: Synchronous rectification; Solar micro inverter; Isolated DC-DC converters; Motor control for 12-48V systems; Or-ing switches
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More
부분 # 제조 설명 재고 가격
IPB026N06NATMA1
DISTI # V72:2272_06382953		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
  • 1:$2.0280
IPB026N06NATMA1
DISTI # IPB026N06NATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		957In Stock
  • 500:$1.6853
  • 100:$2.1669
  • 10:$2.6970
  • 1:$2.9900
IPB026N06NATMA1
DISTI # IPB026N06NATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		957In Stock
  • 500:$1.6853
  • 100:$2.1669
  • 10:$2.6970
  • 1:$2.9900
IPB026N06NATMA1
DISTI # IPB026N06NATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 25A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.3558
IPB026N06NATMA1
DISTI # 31066474		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		450
  • 12:$1.3607
IPB026N06NATMA1
DISTI # 27065521		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
  • 7:$2.0280
IPB026N06NATMA1
DISTI # IPB026N06NATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB026N06NATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$0.9789
  • 2000:$0.9439
  • 4000:$0.9099
  • 6000:$0.8789
  • 10000:$0.8639
IPB026N06NATMA1
DISTI # SP000962142		Infineon Technologies AGTrans MOSFET N-CH 60V 100A 3-Pin TO-263 T/R (Alt: SP000962142)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.2459
  • 2000:€0.9679
  • 4000:€0.8989
  • 6000:€0.8709
  • 10000:€0.8369
IPB026N06NATMA1
DISTI # 50Y2002		Infineon Technologies AGMOSFET Transistor, N Channel, 100 A, 60 V, 0.0023 ohm, 10 V, 2.8 V RoHS Compliant: Yes657
  • 1:$2.5100
  • 10:$2.1300
  • 25:$1.9900
  • 50:$1.8400
  • 100:$1.7000
  • 250:$1.6000
  • 500:$1.4900
IPB026N06NATMA1
DISTI # 726-IPB026N06NATMA1		Infineon Technologies AGMOSFET N-Ch 60V 100A D2PAK-2
RoHS: Compliant		864
  • 1:$2.5100
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
IPB026N06N
DISTI # 726-IPB026N06N		Infineon Technologies AGMOSFET N-Ch 60V 100A D2PAK-2
RoHS: Compliant		482
  • 1:$2.5100
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
IPB026N06NATMA1
DISTI # 9062883P		Infineon Technologies AGMOSFET N-CHANNEL 60V 100A OPTIMOS TO263, RL975
  • 15:£1.5480
  • 50:£1.3860
  • 100:£1.2240
  • 250:£1.2000
IPB026N06NATMA1
DISTI # IPB026N06NATMA1		Infineon Technologies AGTransistor: N-MOSFET,unipolar,60V,100A,136W,PG-TO263-328
  • 1:$1.9215
  • 5:$1.6504
  • 25:$1.3299
  • 100:$1.1594
  • 1000:$1.0741
IPB026N06NATMA1
DISTI # C1S322000654323		Infineon Technologies AGMOSFETs
RoHS: Compliant		360
  • 250:$1.4926
  • 100:$1.4962
  • 25:$1.7836
  • 10:$1.7896
IPB026N06NATMA1
DISTI # 2480797		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant		657
  • 1:£1.9600
  • 10:£1.4000
  • 100:£1.2300
  • 250:£1.2100
  • 500:£1.0400
IPB026N06NATMA1
DISTI # 2480797		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant		657
  • 1:$3.9700
  • 10:$3.3800
  • 100:$2.6900
  • 500:$2.3700
  • 1000:$1.9700
IPB026N06NATMA1
DISTI # 2480797RL		Infineon Technologies AGMOSFET, N-CH, 60V, 100A, TO-263-3
RoHS: Compliant		0
  • 1:$3.9700
  • 10:$3.3800
  • 100:$2.6900
  • 500:$2.3700
  • 1000:$1.9700
영상 부분 # 설명
IPB026N06NATMA1

Mfr.#: IPB026N06NATMA1

OMO.#: OMO-IPB026N06NATMA1

 MOSFET N-Ch 60V 100A D2PAK-2
IPB026N06N

Mfr.#: IPB026N06N

OMO.#: OMO-IPB026N06N

 MOSFET N-Ch 60V 100A D2PAK-2
IPB026N06N

Mfr.#: IPB026N06N

OMO.#: OMO-IPB026N06N-1190

 MOSFET N-Ch 60V 100A D2PAK-2
IPB026N06NATMA1

Mfr.#: IPB026N06NATMA1

OMO.#: OMO-IPB026N06NATMA1-INFINEON-TECHNOLOGIES

 Darlington Transistors MOSFET N-Ch 60V 100A D2PAK-2
유효성
재고:
Available
주문 시:
2000
수량 입력:
IPB026N06NATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.30
US$1.30
10
US$1.23
US$12.31
100
US$1.17
US$116.63
500
US$1.10
US$550.75
1000
US$1.04
US$1 036.70
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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