TK560P60Y,RQ

Mfr. #:: TK560P60Y,RQ
제조사:: Toshiba
설명:: MOSFET N-Ch DTMOSV 600V 60W 380pF 7.0A
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: TK560P60Y,RQ 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: TK560P60Y,RQ Datasheet TK560P60Y,RQ Datasheet (P4-P6)TK560P60Y,RQ Datasheet (P7-P9)TK560P60Y,RQ Datasheet (P10)
ECAD Model:
추가 정보:: TK560P60Y,RQ 추가 정보

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: DPAK-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 600 V

Id - 연속 드레인 전류:: 7 A

Rds On - 드레인 소스 저항:: 430 mOhms

Vgs th - 게이트 소스 임계 전압:: 3 V

Vgs - 게이트 소스 전압:: 30 V

Qg - 게이트 차지:: 14.5 nC

최소 작동 온도:: -

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 60 W

구성:: 하나의

채널 모드:: 상승

상표명:: DTMOSV

포장:: 릴

시리즈:: TK560P60Y

트랜지스터 유형:: 1 N-Channel

상표:: 도시바

가을 시간:: 8 ns

상품 유형:: MOSFET

상승 시간:: 20 ns

공장 팩 수량:: 2000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 105 ns

일반적인 켜기 지연 시간:: 50 ns

Tags: TK560P60, TK560P, TK560, TK56, TK5

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

TK560P60Y,RQ 설명

***ical: Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R

***et: Power MOSFET N-Channel 600V 7A 3-Pin DPAK T/R

TK560P60Y,RQ 추가 정보

DTMOS V Super Junction MOSFETs: Toshiba DTMOS V Super Junction MOSFETs are the next generation of N-channel, deep trench semiconductor technology for high-efficient power MOSFETs. The DTMOS V operates with lower EMI noise, and a 17% reduction On Resistance RDS(ON) compared to the DTMOS IV MOSFETs. The DTMOS V has a deep trench etching process, that results in a narrowing of cell pitch, and a lowering of RDS(ON) when compared with more conventional planar processes. DTMOS V Super Junction MOSFETs are ideal to improve the performance, and facilitate the design of power conversion applications. Applications that include switching power supplies, power factor correction (PFC) designs, and LED lighting. Learn More

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